33 results on '"M. Ahmetoglu"'
Search Results
2. Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95–1.0 μm
- Author
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Afrailov, M. Ahmetoglu
- Published
- 2012
- Full Text
- View/download PDF
3. Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm)
- Author
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M. A. Royz, R. Yu. Mikulich, Yu. P. Yakovlev, Ya. V. Lebiadok, M. Ahmetoglu, E. A. Grebenshchikova, E.V. Kunitsyna, I. A. Andreev, N. D. Iliinskaya, and A. A. Pivovarova
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010302 applied physics ,Range (particle radiation) ,Materials science ,business.industry ,Time constant ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,Photodiode ,law ,0103 physical sciences ,Optoelectronics ,Whispering-gallery wave ,0210 nano-technology ,business ,Quantum ,Solid solution - Abstract
Photodiodes based on solid solutions in the GaSb–InAs system are for the first time applied to study the spectral characteristics of single and coupled whispering-gallery-mode (WGM) lasers emitting in a range of 2.2–2.3 μm. The capacity of photodiodes with a photosensitive area 2.0 mm in diameter is C = 520 pF at U = –2 V, which corresponds to a time constant of τ = 53 ns. It is shown that the parameters of the fabricated photodiodes make it possible to detect the emission of quantum-sized disc lasers at room temperature not using cryogenic cooling.
- Published
- 2020
4. Electrical and optical properties of photodiode structures formed by surface polymerization of [P (EGDMA-VPCA)-SWCNT] films on n-GaAs
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B. Kirezli, M. Ahmetoglu (Afrailov), and A. Kara
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Inorganic Chemistry ,Organic Chemistry ,Spectroscopy ,Analytical Chemistry - Published
- 2019
5. Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method
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M. Ahmetoglu, Sertan Kemal Akay, and Hüseyin Kaan Kaplan
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010302 applied physics ,Photocurrent ,Materials science ,Photoluminescence ,Silicon ,business.industry ,Band gap ,chemistry.chemical_element ,Heterojunction ,Thermionic emission ,02 engineering and technology ,Vacuum arc ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,chemistry ,0103 physical sciences ,Optoelectronics ,General Materials Science ,Electrical and Electronic Engineering ,Thin film ,0210 nano-technology ,business - Abstract
ZnS thin films have been successfully deposited with the same production parameters using thermionic vacuum arc technique on glass and silicon substrates. UV–Vis absorbance spectra and photoluminescence measurements were performed for the optical characterization of ZnS/glass thin film and ZnS/p-Si heterojunction device, respectively. The optical band gap is found approximately 3.78 eV. Further, electrical parameters of the device were determined for the current-voltage (I-V) measurements in dark and under illumination conditions. The open-circuit voltage and the short-circuit current values have been obtained related to illumination I-V measurements. Also, we have utilized photocurrent measurements to investigate the wavelength dependent to photosensitivity of the ZnS/p-Si heterojunction device.
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- 2018
6. The characteristics of ZnS/Si heterojunction diode fabricated by thermionic vacuum arc
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Hüseyin Kaan Kaplan, S. Sarsici, M. Ahmetoglu, Sertan Kemal Akay, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Kaplan, Hüseyin Kaan, Sarsıcı, Serhat, Akay, Sertan Kemal, Ahmetoğlu, Muhittin, R-7260-2016, and GWV-7916-2022
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Diffraction ,Crystal atomic structure ,Thermionic emission ,02 engineering and technology ,Current transport mechanism ,01 natural sciences ,Atomic force microscopy ,Hall effect ,Materials Chemistry ,Semiconductor diodes ,Thin film ,Dark current-voltage ,Capacitance voltage measurements ,010302 applied physics ,Chemistry, physical ,Equivalent series resistance ,Thermionic vacuum arc ,Metals and Alloys ,021001 nanoscience & nanotechnology ,Materials science, multidisciplinary ,Chemistry ,Zinc ,Mechanics of Materials ,Heterojunctions ,Heterojunction diodes ,Optoelectronics ,Carrier concentration ,0210 nano-technology ,Electrical parameter ,Hall effect measurement ,Electric resistance ,Rectifying characteristics ,Silicon ,Materials science ,Fabrication ,X ray diffraction ,Thin films ,Capacitance ,Zinc sulfide ,Optical-properties ,0103 physical sciences ,Vacuum applications ,Metallurgy & metallurgical engineering ,Deposition ,Diode ,Solar-cells ,business.industry ,Mechanical Engineering ,Vacuum arc ,Diodes ,Vacuum technology ,ZnS ,Heterojunction ,business ,Zinc Sulfide ,Optical Properties ,Spray Pyrolysis - Abstract
ZnS/p-Si heterojunction diode has been successfully fabricated by depositing the ZnS thin films on p-type Si substrates using thermionic vacuum arc technique (TVA). The structural analysis was performed with X-ray diffraction (XRD) and Atomic force microscopy (AFM). The results revealed that ZnS thin film demonstrates nano-crystalline behavior with very smooth and homogeneous surface properties. The type was determined as n-type and the carrier concentration was found approximately 3.1 +/- 10(17) cm(-3) of the ZnS thin film by means of Hall Effect measurement. The dark current-voltage (I-V) and the capacitance- voltage (C-V) measurements with different frequencies were performed to determine the characteristics of the ZnS/p-Si heterojunction diode at room temperature. I-V results show that the diode has a good rectifying characteristic with excellent rectification ratio. The electrical parameters of the diode have been obtained by using current transport mechanism. It was found that the barrier height calculated from dark I-V measurements is in good agreement with the value obtained from C-V measurements at a frequency of 1.5 MHz. The series resistance and the built in potential of the fabricated diode were calculated as 3.6 k Omega and 0.7 V using Cheung and Cheung's equation and C-V measurement, respectively. The low cost and effective film production method were utilized to fabrication of heterojunction diode and to investigate characteristics.
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- 2017
7. Photodiodes for detection of IR radiation from WGM lasers
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E. Kunitsyna, I. Andreev, G. Konovalov, Y. Yakovlev, Y. Lebiadok, M. Ahmetoglu (Afrailov), and B. Kirezli
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- 2019
- Full Text
- View/download PDF
8. The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode
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A. Kirsoy, M. Özer, A. Asimov, M. Ahmetoglu, and Muhammad Yasin
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Materials science ,business.industry ,Schottky barrier ,Optoelectronics ,Schottky diode ,Electrical and Electronic Engineering ,business ,Metal–semiconductor junction ,Electronic, Optical and Magnetic Materials - Published
- 2016
9. Electrical Properties Inorganic-on-Organic Hybrid GaAs/Graphene Oxide Schottky Barrier Diode
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A. Kırsoy, M. Ahmetoglu, M. Okutan, F. Yakuphanoglu, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Kırsoy, Ahmet, and Ahmetoğlu, Muhitdin A.
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Electronic parameters ,Current-voltage ,Science & technology - other topics ,Interlayer ,C-V ,Capacitance ,Engineering, electrical & electronic ,Schottky Diodes ,Thermionic Emission ,Electrical Properties ,Series resistance ,Engineering ,Gallium arsenide ,V characteristics ,Negative capacitance ,Optoelectronic applications ,Schottky contacts ,Semiconducting gallium ,Electrical and Electronic Engineering ,Graphene oxide ,Thermionic currents ,Physics, applied ,Germanium ,Physics ,GaAs ,Temperature ,Interface states ,Frequency ,Diodes ,Electronic, Optical and Magnetic Materials ,Graphene oxides ,Nanoscience & nanotechnology ,Capacitance voltage ,Heterojunctions ,Schottky barrier diodes ,Graphene ,Voltage-dependence ,Current voltage ,Current voltage measurement - Abstract
The Au88Ge12 alloy/n-type GaAs(100)/Graphene Oxide (GO)/Au Schottky barrier diode has been fabricated. GO has been prepared by Hummers method and deposited on the GaAs substrate by spraying method. Schottky diode was investigated under dark and light intensity by the current-voltage (I-V) characteristics of the heterojunction. Thermionic current mechanism above the barrier has been detected by current-voltage measurements. It was found that the barrier height increases and the ideality factor decreases with light intensity. The obtained results indicate that GaAs/GO diode can be used as a photosensor in optoelectronic applications. Also, Schottky diode has been measured by capacitance-voltage (C-V) and conductance-voltage (G-V) in the frequency range from 10 kHz to 1 MHz at room temperature.
- Published
- 2016
10. Фотодиоды для регистрации излучения квантово-размерных дисковых лазеров, работающих на модах шепчущей галереи (2.2-2.3 мкм)
- Author
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M. Ahmetoglu
- Subjects
Electrical and Electronic Engineering ,7. Clean energy ,Atomic and Molecular Physics, and Optics - Abstract
Photodiodes developed in the GaSb-InAs system were first used for investigation the spectral characteristics of single and coupled disk lasers emitting on whispering gallery modes at 2.2–2.3 µm. The capacity of the photodiodes with a diameter of photosensitive area of 2.0 mm was C=520 pF at U=−2 V, which corresponds to a time constant of tau=53 ns. It is shown that the parameters of the developed photodiodes make it possible to detect the emission of quantum-sized disk lasers at room temperature and not to use cryogenic cooling.
- Published
- 2020
11. Electrical and optical properties of photodiode structures formed by surface polymerization of P(Egdma-Vpca)-Swcnt films on n-si
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B. Kirezli, M. Ahmetoglu Afrailov, Hüseyin Kaan Kaplan, Ali Kara, and I. Gucuyener
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chemistry.chemical_classification ,010405 organic chemistry ,Organic Chemistry ,Analytical chemistry ,Schottky diode ,Carbon nanotube ,Polymer ,010402 general chemistry ,01 natural sciences ,0104 chemical sciences ,Analytical Chemistry ,law.invention ,Photodiode ,Inorganic Chemistry ,chemistry.chemical_compound ,Polymerization ,Rectification ,chemistry ,law ,Ethylene glycol ,Spectroscopy - Abstract
s Poly (ethylene glycol dimethacrylate-1-vinyl-1H-pyrrole-2-carboxylic acid)/carbon nanotube, single-walled)/n-Si ([P(EGDMA-VPCA)-SWCNT]/n-Si) photodiode structures was fabricated by using surface polymerization method. While electrical properties were measured at different temperatures, optical properties were measured at room temperatures. Dark and light current characteristics were investigated. Spectral photoresponse measurements of the structure were realized at room temperature. They showed that the fabricated structure exhibited rectification behavior, which makes it a good nominee for optoelectronic implementation area.
- Published
- 2019
12. Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization
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M. Ahmetoglu, Ali Kara, B. Kucur, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü., Ahmetoğlu, Muhitdin A., Kara, Ali, Kucur, Banu, and AAG-6271-2019
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Current-voltage measurements ,Poly ethylene glycol ,Materials science ,Surface polymerization ,Fabricated structures ,Triazole ,General Physics and Astronomy ,02 engineering and technology ,Carbon nanotube ,01 natural sciences ,Polymerization ,law.invention ,Schottky Diodes ,Thermionic Emission ,Electrical Properties ,Ethylene ,chemistry.chemical_compound ,Electronic device ,law ,Current mechanisms ,Yarn ,0103 physical sciences ,Electrical-properties ,Ethylene glycol ,Diode ,010302 applied physics ,Nanotubes ,Physics ,Capacitance-voltage characteristics ,1,2,4-Triazole ,Ethylene glycol dimethacrylate ,021001 nanoscience & nanotechnology ,Physics, multidisciplinary ,chemistry ,Chemical engineering ,Single-walled ,Schottky-barrier diode ,Polyols ,0210 nano-technology ,Dark current - Abstract
Bu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur. Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.
- Published
- 2016
13. Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode
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B. Kucur, M. Ahmetoglu, E. V. Kunitsyna, M. P. Mikhailova, I. A. Andreev, and Yu. P. Yakovlev
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010302 applied physics ,Materials science ,Open-circuit voltage ,Band gap ,business.industry ,Photovoltaic system ,General Physics and Astronomy ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Light intensity ,Thermophotovoltaic ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Short circuit ,Diode ,Dark current - Abstract
In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (Isc) and open circuit voltage (Voc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
- Published
- 2016
14. Electrical and Optical Characteristics of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb Heterostructure Photodiode
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Maya P. Mikhailova, B. Kucur, I. A. Andreev, E.V. Kunitsyna, M. Ahmetoglu, and Yury P. Yakovlev
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Materials science ,law ,business.industry ,General Physics and Astronomy ,Optoelectronics ,Heterojunction ,business ,Photodiode ,law.invention - Published
- 2015
15. Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95–1.0μm
- Author
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M. Ahmetoglu Afrailov, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., and Afrailov, Muhitdin Ahmetoğlu
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Type II heterojunctions ,Open circuit voltage ,III-V semiconductors ,Photon ,Materials science ,Light ,Dark currents ,Type II ,law.invention ,Incident light ,Optics ,law ,Band alignments ,Materials Chemistry ,Photovoltaic modes ,Physics, condensed matter ,Room temperature ,Physics, applied ,Liquid phase epitaxy ,business.industry ,Open-circuit voltage ,Physics ,Heterojunction photodiodes ,Photovoltaic system ,Metals and Alloys ,Heterojunction ,Surfaces and Interfaces ,Ray ,Materials science, multidisciplinary ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Photodiode ,Wavelength ,Photovoltaic characteristics ,Current voltage characteristics ,Semiconductor Quantum Wells ,Heterostructures ,Photodiodes ,Photovoltaic effects ,Heterojunctions ,Type II heterojunction ,Optoelectronics ,Materials science, coatings & films ,business ,Spectral range ,Band alignment ,Dark current - Abstract
The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R 0 A product were investigated at different temperatures. The current–voltage characteristics of n -GaSb/ n -GaInAsSb/ p -GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95–1.0 μm and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.
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- 2012
16. Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter
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I. A. Andreev, Yu. P. Yakovlev, E. V. Kunitsyna, M. P. Mikhailova, B. Kucur, and M. Ahmetoglu
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Wavelength ,Materials science ,business.industry ,General Physics and Astronomy ,Optoelectronics ,Liquid phase ,Heterojunction ,Atmospheric temperature range ,Current (fluid) ,Double heterostructure ,Epitaxy ,business ,Quantum tunnelling - Abstract
GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5 4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77 350 K. It was found that di usion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242 171 K). At low temperature region (< 171 K), the tunneling mechanism of the current ow dominates in both forward and reverse biases.
- Published
- 2014
17. Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells
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I. A. Andreev, Victor V. Sherstnev, O. Gurler, Maya P. Mikhailova, E.V. Kunitsyna, T.V. L'vova, G. Kaynak, Yu. P. Yakovlev, M. Ahmetoglu, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ahmetoğlu, Muhitdin A., Kaynak, Gökay, Gürler, Orhan, and AAH-1837-2021
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Technology ,Annealing (metallurgy) ,Epitaxy ,law.invention ,Ingaasp ,High-efficiency ,law ,Semiconductor doping ,Photodiodes ,Sulfur compounds ,Indium arsenide ,Spectroscopy ,Long wavelength ,Rare-earth-elements ,Gallium compounds ,Thermophotovoltaic applications ,Atomic and Molecular Physics, and Optics ,Materials science, multidisciplinary ,Electronic, Optical and Magnetic Materials ,Solutions ,Thermophotovoltaic ,Optoelectronics ,III-V semiconductors ,Materials science ,Passivation ,Characterization ,chemistry.chemical_element ,Narrow band gap semiconductors ,Inorganic Chemistry ,Semiconductor alloys ,Infrared photodiode ,Arsenic compounds ,Sodium sulfide ,Electrical and Electronic Engineering ,Physical and Theoretical Chemistry ,Common emitter ,Thermophoto voltaic cells ,business.industry ,Organic Chemistry ,Doping ,III-V materials ,Optics ,Emitter temperature ,Photodiode ,Semiconductor Quantum Wells ,Heterostructures ,chemistry ,TPV cells ,Growth surfaces ,business ,Holmium - Abstract
Bu çalışma, 4-8 Şubat 2010 tarihlerinde İstanbul[Türkiye]'da düzenlenen 2. World Conference on Educational Sciences (WCES-2010)'da bildiri olarak sunulmuştur. The paper describes liquid phase epitaxial growth and characterization of the GaSb- and InAs-related materials for the photodiodes and thermophotovoltaic applications. It was shown that doping of the melt with holmium results in obtaining the high purity GaInAsSb and InAs layers. The passivation with the 1 M Na2S aqueous solution makes it possible to prepare flat growth surfaces of GaSb(1 0 0) and InAs(1 0 0) substrates after annealing. A reproducible technique has been developed for fabrication of the high-efficiency GaInAsSb/GaAlAsSb and InAs/InAsSbP photodiodes with the long-wavelength photosensitivity edge of 2.4 and 3.8 mu m, respectively. Room temperature detectivity in the spectral peak reaches D* = (0.8-1.0) x 10(11) W-1 cm Hz(1/2) for the GaInAsSb/GaAlAsSb photodiodes and D* = (3.0-5.0) x 109 W-1 cm Hz(1/2) for the InAs/InAsSbP devices. We have adapted the technology for thermophotovoltaic cells operating at an emitter temperature of 1000-1700 degrees
- Published
- 2010
18. Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application
- Author
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M. Ahmetoglu, B. Kucur, E.V. Kunitsyna, Yu. P. Yakovlev, Maya P. Mikhailova, I. A. Andreev, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ahmetoğlu, Muhitdin A., and Kucur, Banu
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Heat Emissions ,Gallium Antimonides ,Emitters (Equipment) ,Electric properties ,At-wavelength ,Optical characteristics ,Electrical and optical properties ,Double heterojunctions ,law.invention ,law ,Photodiodes ,Spectroscopy ,Quantum tunnelling ,Long wavelength ,Physics, applied ,Tunneling mechanism ,Optical properties ,Physics ,Internal quantum efficiency ,GaInAsSb ,Heterojunction ,Reverse bias ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Thermophotovoltaic ,Heterojunctions ,Optoelectronics ,Antireflection coatings ,Reverse currents ,Quantum efficiency ,Dark current ,Instruments & instrumentation ,Temperature coefficient ,III-V semiconductors ,Materials science ,Dark currents ,Type II ,Current flows ,Low temperature regions ,Optics ,Infrared photodiode ,Depletion region ,Band alignments ,Current mechanisms ,Heterostructures ,Spectral sensitivity ,Thermophoto voltaic cells ,business.industry ,High temperature ,Photodiode ,Optical materials ,TPV cells ,II-IV semiconductors ,business - Abstract
The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Delta lambda/Delta T = 1.6 nm/K. Quantum efficiency of 0.6-0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 mu m. (C) 2010 Elsevier B.V. All rights reserved. Russian Foundation for Basic Research (RFBR) (07-02-01359) Russian Foundation of Basic Research (RFBR) (09-08-91224)
- Published
- 2010
19. TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD
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N. Aprailov, M. G. Dadamirzaev, G. Kaynak, G. Gulyamov, S. H. Shamirzaev, S. R. Boydedayev, M. Ahmetoglu, A. G. Gulyamov, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ahmetoğlu, Muhitdin A., and Kaynak, Gökay
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Physics, applied ,Materials science ,Condensed matter physics ,Electromotive force ,Field (physics) ,Physics, mathematical ,Physics ,Schottky barrier ,Statistical and Nonlinear Physics ,Plasma ,Condensed Matter Physics ,Ultrahigh frequency ,Nuclear magnetic resonance ,Depletion region ,Strong ultrahigh frequency (UHF) field ,Electromotive force (EMF) ,Rectangular potential barrier ,Physics, condensed matter ,Genetic Recombination ,Semiconductors ,Dember Effect ,Layer (electronics) - Abstract
Radio-frequency (HF) quasi-potential Φ in the field of the space charge region of contact of a metal–semiconductor is explored. At the frequency, ω, greater frequency plasma fluctuations ω0 HF quasi-potential is positive, but at frequencies ω < ω0 quasi-potential Ph is negative. VAC and Schottky barrier with provision for HF quasi-potential are calculated. It is shown that HF gives an essential contribution on EMF hot carriers when frequency of wave is less in electronic gas fluctuations in layer potential barrier.
- Published
- 2009
20. Electrical properties of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions
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M. Ahmetoglu, Yu. P. Yakovlev, I. A. Andreev, M. P. Mikhailova, G. Kaynak, and E. V. Kunitsyna
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Materials science ,Physics and Astronomy (miscellaneous) ,Band gap ,business.industry ,Charge (physics) ,Heterojunction ,Electron ,Photodiode ,law.invention ,law ,Electric field ,Optoelectronics ,Current (fluid) ,business ,Quantum tunnelling - Abstract
We have studied the electrical characteristics of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various temperatures. A comparison of the theoretical results and experimental data showed that the tunneling charge transfer mechanism dominates at low temperatures (T < 150 K) under both forward and reverse bias conditions. The tunneling current becomes a determining factor at an electric field strength in the p-n junction of no less that 105 V/cm, which is related to a small bandgap width of the materials studied and low effective masses of electrons and holes.
- Published
- 2008
21. TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF <font>Cr/p</font>–<font>Si</font>(100) SCHOTTKY BARRIER DIODES
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Yuksel Bektore, M. Ahmetoglu, M. C. Haciismailoglu, and K. Erturk
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Materials science ,Condensed matter physics ,Schottky barrier ,Schottky effect ,Richardson constant ,Schottky diode ,Statistical and Nonlinear Physics ,Thermionic emission ,Activation energy ,Atmospheric temperature range ,Condensed Matter Physics ,Diode - Abstract
The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.
- Published
- 2008
22. Electrical transport at a isotype type II heterojunctions in the system of GaSb-GaInAsSb
- Author
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M. Ahmetoglu
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Condensed matter physics ,Chemistry ,Metals and Alloys ,Schottky diode ,Heterojunction ,Surfaces and Interfaces ,Atmospheric temperature range ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Epitaxy ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Condensed Matter::Materials Science ,Tunnel effect ,Rectification ,Materials Chemistry ,Mathematics::Representation Theory ,Quantum tunnelling ,Dark current - Abstract
Current flow mechanisms have been studied for liquid phase epitaxy grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the N-n isotype heterostructures were investigated in detail at several temperatures. It is shown that both the type II staggered and misaligned heterojunctions can behave as Schottky diodes and the dark current–voltage characteristics of this isotype hetero-structures were rectifying over the whole temperature range 90–300 K. These measurements establish that the reverse current in both (staggered and misaligned) investigated structures are determined mainly by tunneling mechanism. The theoretical relations for reverse dark current in staggered lineup isotype heterostructures have been developed.
- Published
- 2008
23. Electrical properties of isotype N +-GaSb/n0-GaInAsSb/N +-GaAlAsSb type-II heterojunctions
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Yu. P. Yakovlev, M. Ahmetoglu, M. P. Mikhailova, E. V. Kunitsyna, I. A. Andreev, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., and Ahmetoğlu, Muhitdin A.
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Gasb ,Materials science ,business.industry ,Lasers ,Physics ,Schottky diode ,Heterojunction ,Thermionic emission ,Electronic structure ,Atmospheric temperature range ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Semiconductor Quantum Wells ,Indium Arsenide ,Photodiodes ,Condensed Matter::Materials Science ,Tunnel effect ,Optoelectronics ,Physics, condensed matter ,business ,Quantum tunnelling ,Excitation - Abstract
Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N +-GaSb/n0-GaInAsSb/N +-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90–300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.
- Published
- 2007
24. Determination of Carrier Concentrations in P-GaSb/n-InGaAsSb Type II Misaligned Heterojunctions by the Conductivity-Magnetic Field Dependence
- Author
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Banu Kucur and M. Ahmetoglu
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Materials science ,Condensed matter physics ,Electronic engineering ,Heterojunction ,Electrical and Electronic Engineering ,Conductivity ,Atomic and Molecular Physics, and Optics ,Magnetic field - Published
- 2013
25. Control of Blank Holder Force to Eliminate Wrinkling and Fracture in Deep-Drawing Rectangular Parts
- Author
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G. Kinzel, Taylan Altan, M. Ahmetoglu, and T.R. Broek
- Subjects
Materials science ,Mechanical Engineering ,Metallurgy ,Forming force ,Stamping ,Blank ,Industrial and Manufacturing Engineering ,visual_art ,visual_art.visual_art_medium ,Formability ,Composite material ,Deep drawing ,Sheet metal ,Control methods - Abstract
The predominant failure modes in stamping of sheet metal parts (deep drawing and stretch forming) are wrinkling and fracture. In many cases these defects may be eliminated by appropriate control of the Blank Holding Force (BHF). This paper summarizes the results of a recent study on the formability of rectangular parts from aluminum alloy 2008-T4. Wrinkling and fracture limits have been determined and BHF control methods have been developed to eliminate defects, improve part quality, and increase the draw depth.
- Published
- 1995
26. Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes
- Author
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Ali Kara, Hakan Kockar, Nalan Tekin, M. Ahmetoglu, Saadet Kayiran Beyaz, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü., Ahmetoğlu, Muhitdin, Kara, Ali, AAG-6271-2019, and Fen Edebiyat Fakültesi
- Subjects
Semiconducting silicon compounds ,Barrier heights ,Electrical measurement ,Schottky diodes ,Leakage currents ,law.invention ,Polymerization ,chemistry.chemical_compound ,Single walled carbon nanotube ,law ,Impurity ,Capacitance voltage characteristic ,Single-walled carbon ,Materials Chemistry ,Imidazole ,Semiconductor diodes ,Electrical measurements ,Physics, condensed matter ,Composite material ,Capacitance voltage measurements ,Physics, applied ,Physics ,Metals and Alloys ,Impurity density ,Surfaces and Interfaces ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Schottky barriers ,Materials science, multidisciplinary ,Current voltage characteristics ,Schottky Diodes ,Thermionic Emission ,Interface States ,Cvd method ,Materials science, coatings & films ,Current voltage ,Ideality factors ,Silicon ,Materials science ,Schottky barrier ,Surface polymerization ,Capacitance ,Carbon nanotube ,Ethylene ,Ethylene glycol ,Room temperature ,Single-walled carbon nanotubes (swcn) ,Electrical characteristic ,N-vinyl imidazole ,Schottky diode ,Diodes ,Carbon ,Reverse-bias ,chemistry ,Chemical engineering ,Semiconducting silicon ,Bias voltage ,Schottky barrier diodes ,Adsorption ,Metal semiconductor-structure - Abstract
Köçkar, Hakan (Balikesir Author), In this paper we report the electrical characteristics of the Schottky diodes formed by surface polymerization of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes on n-Si The Single Walled Carbon Nanotubes were synthesized by CVD method. The main electrical properties of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si have been investigated through the barrier heights, the ideality factors and the impurity density distribution, by using current-voltage and reverse bias capacitance voltage characteristics. Electrical measurements were carried out at room temperature. Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.61 +/- 0.02 eV and 0.72 +/- 0.02 eV obtained from both current-voltage and capacitance-voltage measurements at room temperature, respectively.
- Published
- 2012
27. Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m
- Author
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E.V. Kunitsyna, I. A. Andreev, Yu. P. Yakovlev, Konstantin D. Moiseev, M. Ahmetoglu, Maya P. Mikhailova, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., and Ahmetoğlu, Muhitdin
- Subjects
Instruments & instrumentation ,Diffusion mechanisms ,Materials science ,III-V semiconductors ,Dark currents ,Optical characteristics ,Growth ,law.invention ,Current flows ,Low temperature regions ,law ,InAs ,Current mechanisms ,Diffusion (business) ,Photodetector ,Photodiodes ,Quantum tunnelling ,Physics, applied ,Range (particle radiation) ,Tunneling mechanism ,business.industry ,Physics ,Photodiode structures ,Heterojunction photodiodes ,Heterojunction ,Optics ,Reverse bias ,Condensed Matter Physics ,High temperature ,Liquid Phase ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Photodiode ,Semiconductor Quantum Wells ,Heterostructures ,Spectral sensetivity ,Optical materials ,Heterojunctions ,Optoelectronics ,Reverse currents ,Current (fluid) ,business ,Liquid phase epitaxy (LPE) ,Spectral range ,Dark current ,Voltage - Abstract
The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism. Russian Foundation for Basic Research (RFBR) - 07-02-01359 / 09-08-91224
- Published
- 2012
28. Determination of the parameters for the back-to-back switched Schottky barrier structures
- Author
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Sertan Kemal Akay, M. Ahmetoglu, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ahmetoğlu, Muhitdin, Akay, Sertan Kemal, and R-7260-2016
- Subjects
Contacts ,Barrier heights ,Gaas ,General Physics and Astronomy ,Gallium arsenide ,chemistry.chemical_compound ,General Materials Science ,Diode ,Capacitance voltage measurements ,Physics, applied ,Physics ,Gallium compounds ,Photodetectors ,Gallium alloys ,Structural metals ,Materials science, multidisciplinary ,Current voltage characteristics ,Metals ,Schottky Diodes ,Thermionic Emission ,Interface States ,Optoelectronics ,Radio frequency ,Current voltage ,Materials science ,Schottky barrier ,Capacitance ,Metal–semiconductor junction ,Temperature range ,Sputtering ,Metal-semiconductor-metal structures ,Schottky barrier structures ,Arsenic compounds ,Parameter estimation ,Metal semiconductor metal ,Radio-frequency sputtering ,Semiconducting gallium ,Schottky contacts ,Schottky barrier contacts ,Room temperature ,business.industry ,Height ,Schottky diode ,Atmospheric temperature range ,chemistry ,Semiconductors ,Capacitance voltage ,Schottky barrier diodes ,business - Abstract
The Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal–semiconductor–metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current–voltage ðI—VÞ and capacitance–voltage ðC—VÞ characteristics of the devices have been investigated in the temperature range of 80–316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current–voltage characteristics is close to the value obtained from capacitance–voltage measurements.
- Published
- 2010
29. Gallium Antimonide-Based Photodiodes and Thermophotovoltaic Devices
- Author
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E.V. Kunitsyna, M. Ahmetoglu, Yury P. Yakovlev, K. Erturk, I. A. Andreev, and Maya P. Mikhailova
- Subjects
Materials science ,business.industry ,Band gap ,Photodiode ,law.invention ,Material growth ,Gallium antimonide ,chemistry.chemical_compound ,Optics ,chemistry ,law ,Thermophotovoltaic ,Optoelectronics ,Monochromatic color ,business ,Sensitivity (electronics) ,Voltage - Abstract
This paper briefly presents some important aspects of the GaSb‐based material growth, as well as the performance of photodiodes and TPV devices for the 0.9–2.55 μm spectral range. A reproducible technique has been developed for the production of high‐speed and high‐efficiency GaSb/GaInAsSb/GaAlAsSb photodiodes. The detectivity of the photodiodes, estimated from the measured noise level and monochromatic current sensitivity, in the spectral peak reaches D*(λmax, 1000, 1)=(0.8–1.0)×1011 W−1×cm×Hz1/2 at room temperature. Recently, we have adapted the technology for creating GaInAsSb (0.52–0.53 eV band gap) TPV devices. Based on the our results we believe a 0.5 eV band gap GaSb‐based TPV cell with an open‐circuit voltage well over 300 mV at current 2–3 A is a realistic near‐term goal.
- Published
- 2007
30. The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode
- Author
-
M. Ahmetoglu, A. Asimov, A. Kirsoy, and B. Kucur
- Subjects
Materials science ,business.industry ,Schottky barrier ,General Physics and Astronomy ,Optoelectronics ,Schottky diode ,business ,Metal–semiconductor junction - Published
- 2015
31. Dark currents and impact ionization coefficients in the InP-InGaAsP double heterostructures
- Author
-
M. Ozer, N. Aprailov, M. Ahmetoglu, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Özer, Mustafa, and Ahmetoğlu, M.
- Subjects
Physics ,Physics, applied ,Range (particle radiation) ,Condensed matter physics ,Dark currents ,Physics, mathematical ,Statistical and Nonlinear Physics ,Heterojunction ,Reverse current ,Atmospheric temperature range ,Impact ionization coefficients ,Condensed Matter Physics ,Impact ionization ,Electric field ,Liquid Phase Epitaxy ,Photoconductive Cells ,Inp ,Physics, condensed matter ,Tunneling current ,Atomic physics ,Photodetector ,Voltage ,Avalanche photo-diodes - Abstract
The dependence of reverse-biased leakage current on both voltage and temperature for InP - In x Ga 1-x As y P 1-y DH (double heterostructures) has been analyzed. We find that at the whole of the temperature range and at a wide range of reverse bias voltages, the reverse current varies exponentially with applied voltage, indicating that the band-to-band tunneling current mechanism prevails. An agreement is obtained between theory and experimental results. The tunneling current becomes substantial at peak junction electric fields as low as 105 V/m due to the small direct energy gaps and small effective masses of the structures tested. The process of breakdown in the investigated structures was of the avalanche type. The impact ionization coefficients in In x Ga 1-x As y P 1-y have been experimentally determined for composition x=0.68.
- Published
- 2006
32. A ZnS-Si isotype heterojunction avalanche photodiode structure for scintillation light detection
- Author
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I. Tapan, M. Ahmetoglu, F. Kocak, Uludağ Üniversitesi/Fen Edebiyet Fakültesi/Fizik Bölümü., Tapan, İ., Ahmetoğlu, Afrailov M., and Koçak, F.
- Subjects
Instruments & instrumentation ,Nuclear and High Energy Physics ,Photon ,Monte carlo simulation ,Physics::Instrumentation and Detectors ,Nuclear science & technology ,Monte Carlo method ,Noise figure ,Quantum efficiency ,Optics ,Avalanche Photodiodes ,Dark Currents ,Calorimeters ,Physics, nuclear ,Instrumentation ,Scintillation ,Physics ,Photons ,Detector modelling ,business.industry ,Avalanche diodes ,Heterojunction ,Monte carlo methods ,Avalanche photodiode ,Heterojunction detectors ,Wavelength ,Scintillation light detection ,Heterojunctions ,Physics, particles & fields ,Optoelectronics ,business - Abstract
Bu çalışma, 19-24 Haziran tarihlerinde Beaune[Fransa]'da düzenlenen 4. International Conference on New Developments in Photodetection'da bildiri olarak sunulmuştur. We have developed a zinc sulfide-silicon (ZnS-Si) isotype heterojunction avalanche photodiode (APD) structure that has high quantum efficiency and low excess noise factor for photons of wavelength in the region from 340 to 800 nm. The dependence of quantum efficiency, mean signal and its fluctuation on incident photons wavelength are calculated in a well-defined device geometry by a Single Particle Monte Carlo simulation technique. Based on this work, we offer a new APD structure for scintillation light detection.
- Published
- 2006
33. Avalanche photodiodes for electromagnetic calorimeters
- Author
-
F. Kocak, E. Pilicer, M. Ahmetoglu, and I. Tapan
- Subjects
Physics ,Nuclear and High Energy Physics ,Photon ,Silicon ,Physics::Instrumentation and Detectors ,business.industry ,Photoresistor ,Physics::Medical Physics ,Detector ,Astrophysics::Instrumentation and Methods for Astrophysics ,chemistry.chemical_element ,Heterojunction ,Avalanche photodiode ,law.invention ,Photodiode ,Optics ,Silicon photomultiplier ,chemistry ,law ,Optoelectronics ,business ,Instrumentation - Abstract
Hamamatsu S8148 silicon avalanche photodiode (APD) working in proportional mode has been chosen as readout device for the PbWO4 crystals in the barrel of the CMS electromagnetic calorimeter (ECAL). High hadron fluences strongly affect the main parameters of both the scintillation crystals and the silicon detectors. In this work, we offer a new zinc sulfide–silicon (ZnS–Si) isotype heterojunction APD structure that is able to operate in high-radiation levels. A Monte Carlo simulation code has been performed in order to compare the Hamamatsu S8148 and the ZnS–Si APD structures for the photons emitting from PbWO4 crystal during 10 years of CMS operation. Based on this work, the performance of these two APD structures has been investigated.
- Published
- 2007
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