1. Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application
- Author
-
J.B.P.H. van der Putten, Paul Heremans, Kevin O'Neill, Gerwin H. Gelinck, M van Neer, Peter Vicca, Kris Myny, Edsger C. P. Smits, Manoj Nag, Jan Genoe, E. van Veenendaal, Soeren Steudel, and Ashutosh Tripathi
- Subjects
Integration levels ,Physics and Astronomy (miscellaneous) ,Radio frequency identification (RFID) ,HOL - Holst ,Gallium ,semiconductors ,02 engineering and technology ,Integrated circuit ,Hardware_PERFORMANCEANDRELIABILITY ,01 natural sciences ,Indium ,law.invention ,law ,Low-voltage ,010302 applied physics ,TS - Technical Sciences ,field-effect transistors ,Transistor ,Radio waves ,Electric rectifiers ,021001 nanoscience & nanotechnology ,Zinc ,Thin-film transistor ,Logic gate ,Optoelectronics ,Field-effect transistor ,0210 nano-technology ,Low processing temperature ,Materials science ,Indium zinc oxides ,Thin films ,chemistry.chemical_element ,Functional codes ,Processing ,High frequency HF ,Field-effect mobilities ,0103 physical sciences ,Zinc oxide ,Hardware_INTEGRATEDCIRCUITS ,Electronics ,business.industry ,Plastic foils ,Building blockes ,Thin film transistors ,Mechatronics, Mechanics & Materials ,Switching circuits ,Thin film circuits ,chemistry ,business ,Amorphous films ,Low voltage ,Logic circuits - Abstract
In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 mu m foils is presented. High performance TFTs were fabricated at low processing temperatures (< 150 degrees C) with field effect mobility around 17 cm(2)/V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3579529] ispartof: Applied Physics Letters vol:98 issue:16 status: published
- Published
- 2011