Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 mu m foils is presented. High performance TFTs were fabricated at low processing temperatures (< 150 degrees C) with field effect mobility around 17 cm(2)/V s. The technology is demonstrated with circuit building blocks relevant for radio frequency identification applications such as high-frequency functional code generators and efficient rectifiers. The integration level is about 300 transistors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3579529] ispartof: Applied Physics Letters vol:98 issue:16 status: published