1. Preparation of SnO2 thin films at low temperatures with H2 gas by the hot-wire CVD method
- Author
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Norimitsu Yoshida, T. Fujii, M. Ushiro, M. Furuhashi, Shuichi Nonomura, Fumitaka Ohashi, Hironori Natsuhara, and T. Tatsuyama
- Subjects
Materials science ,Hydrogen ,Metals and Alloys ,chemistry.chemical_element ,Nanotechnology ,Surfaces and Interfaces ,Substrate (electronics) ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,law.invention ,Carbon film ,chemistry ,Chemical engineering ,Etching (microfabrication) ,law ,Solar cell ,Materials Chemistry ,Crystallization ,Thin film ,Deposition (law) - Abstract
H2 additional effect for crystallization of SnO2 films prepared by the hot-wire CVD method was investigated. The crystallization of SnO2 films starts at 170 °C. The selectivity enhancement of the solar cell substrate will contribute to reduce the cost of silicon thin film solar cells. The atomic hydrogen assisted nano-crystallization exists for the depositions of SnO2 films by the hot-wire CVD method. Furthermore, the addition of H2 gas improved the electrical conductivity up to 5.3 × 100 S/cm. However, these effects are limited in the deposition condition of a small amount of hydrogen. Addition of much higher hydrogen concentration starts an etching effect of oxygen atoms.
- Published
- 2011
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