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We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, SiGe BiCMOS WL ("cost performance") tailored to wireless/storage applications, and RF-CMOS optimized for low-cost consumer applications. Future opportunities and challenges for advancement in RF technologies are described in light of CMOS and SiGe heterojunction bipolar transistor scaling. In addition, we discuss the maturity of SiGe BiCMOS by looking at the levels of integration and manufacturability.

High performance communications applications have made technology choices more important than ever. Silicon Germanium (SiGe) BiCMOS has enabled the widespread introduction of many these applications by providing superior cost and integration capability, compared to III-V solutions and, relative to RFCMOS, one can attain better time to market. BiCMOS integration approaches for high performance and cost performance NPN modules and state of the art passive elements are discussed as well as future technology directions.

This paper demonstrates the effect of a new low-cost oxide filled trench isolation structure, and implanted sub-collectors, on the latchup robustness. With scaling and focus on low-cost wireless technology, new technologies are being developed utilizing a shallower oxide-filled trench structure and low-doped implanted sub-collectors. In this paper, the first latchup measurements and corresponding new discoveries are shown, utilizing this new isolation structure and its integration with implanted sub-collectors. This paper compares latchup measurements with the base CMOS technology (e.g. standard dual well p-substrate base technology) to quantify the net improvement. The results are shown with trench isolation only, sub-collector only, and the combined effect of the trench isolation and sub-collector.

Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology has established a strong foothold in the communications marketplace by offering a cost competitive solution for a myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9-77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with state-of-the-art CMOS and passive elements. We present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

With the advancement of the fT/fMAX performance scaling of SiGe HBTs the breakdown voltage (BVCBO/BVCEO) reduces commensurately, causing design related concerns. It is important, therefore, that multiple fT/BVCEO devices be offered in the RF technologies to meet the varying needs of the communication products. Unlike the GaAs technologies, the SiGe BiCMOS technologies are capable of integrating various flavors of fT/BVCEO SiGe HBT devices at a technology node. In this work, we investigate the tradeoff in fT-BVCEO for advanced SiGe HBTs by various collector optimization schemes such as, subcollector dopant species and concentration, epilayer thickness, SIC and other layout techniques.

We present IBM's next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety of supply voltages, the technology, features three different performance NPNs and standard, dual oxide, zero V t , and junction isolated FETs. Optimized for wireless and mixed signal applications, BiCMOS 8WL will enable system on a chip integration for 3G cellular applications.

This paper will demonstrate the effect of heavily doped buried layers (HDBL) on electrostatic discharge protection, latchup, and silicon germanium (SiGe) heterojunction bipolar transistors (HBT). Heavily doped buried layers (HDBL) implants, in prior publications, have demonstrated improvements in latchup robustness in low-doped substrate wafer technology. The influence of HDBL on MOSFET ESD protection has also been demonstrated. In this paper, the focus is the influence of HDBL implants on BiCMOS SiGe HBT devices and derivatives from a functionality, ESD and latchup perspective in a BiCMOS SiGe technology as well as relevance to RF and MS CMOS technology. Experimental results will be shown for different heavily doped buried layer implant doses and energies.

This paper demonstrates the effect of process and design variations on the ESD robustness of both active and passive elements in 50, 120 and 200 GHz BiCMOS SiGe HBT processes. The influence of subcollector dopant type and concentration, and n-well on ESD robustness of SiGe HBT npn transistors, SiGe varactor structures, p/sup +//n-well/subcollector structures and n-well diode structures is shown. HBM and TLP ESD measurements are provided to evaluate the observation of lateral resistor ballasting in the subcollector region in these structures and its influence on ESD robustness.

Electrostatic discharge robustness of an epitaxial-base pseudomorphic Silicon Germanium Heterojunction Bipolar Transistor (HBT) device with Carbon incorporation is shown for the first time. Experimental results show that incorporation of Carbon in the base of a SiGe HBT device improves power-to-failure variation by improved control of the base width and base width distribution.

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs; with the high performance device achieving F/sub t//F/sub max/ of 60/85 GHz with a 3.0 V BV/sub CEO/. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.

A BiCMOS technology is presented that integrates a high performance NPN (f/sub T/=120 GHz and f/sub max/=100 GHz), ASIC compatible 0.11 /spl mu/m L/sub eff/ CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared to previously published results has been achieved through further collector and base profile optimization guided by process and device simulations. Base transit time reduction was achieved by simultaneously increasing the Ge ramp and by limiting the base diffusion with the addition of carbon doping to SiGe epitaxial base. This paper describes IBM's next generation SiGe BiCMOS production technology targeted at the communications market.

High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the electrostatic discharge (ESD) robustness is reported. BiCMOS active and passive elements are discussed.

This paper investigates high-current and electrostatic discharge (ESD) phenomena in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBTs is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.