High current transmission line pulse (TLP) and ESD characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation

Electrostatic discharge robustness of an epitaxial-base pseudomorphic Silicon Germanium Heterojunction Bipolar Transistor (HBT) device with Carbon incorporation is shown for the first time. Experimental results show that incorporation of Carbon in the base of a SiGe HBT device improves power-to-failure variation by improved control of the base width and base width distribution.