258 results on '"Lorusso, Gian"'
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2. Trends in e-beam metrology and inspection
3. Low landing energy as an enabler for optimal contour based OPC modeling in the EUV era
4. Application of SONR for a better OPC model with a EUV curvilinear photomask
5. Improvements in the measurement of local critical dimension uniformity for holes and pillars
6. Unbiased roughness measurements: Subtracting out SEM effects
7. Frequency-informed deep-learning denoising method supporting sub-nm metrology for high NA EUV lithography
8. Advanced high-voltage e-beam system combined with an enhanced D2DB for on-device overlay measurement
9. 300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials
10. In-line metrology for vertical edge placement control of monolithic CFET using CD-SEM
11. Dry resist metrology readiness for high-NA EUVL
12. e-beam metrology of thin resist for high NA EUVL
13. Special Section Guest Editorial: Advances in E-Beam Metrology
14. Direct yield prediction from SEM images
15. Improvements in the measurement of local critical dimension uniformity for holes and pillars
16. Probabilistic process window: a new approach to focus-exposure analysis
17. Unbiased roughness measurements from low signal-to-noise ratio scanning electron microscope images
18. Unavoidable renaissance of electron metrology in the age of high numerical aperture extreme ultraviolet lithography
19. Role of landing energy in e-beam metrology of thin photoresist for high-numerical aperture extreme ultraviolet lithography
20. Extraction of roughness measurements from thin resists with low signal-to-noise-ratio (SNR) SEM images by applying deep learning denoiser
21. Influence of photoresist thinning and underlayer film on e-beam using eP5 for high-NA patterning
22. Need for LWR metrology standardization: the imec roughness protocol
23. High-NA EUV photoresist metrology using high-throughput scanning probe microscopy
24. High throughput scanning probe metrology for high-NA EUV photoresist profiling
25. Metrology of thin resist for high NA EUVL
26. Low-voltage aberration-corrected SEM metrology of thin resist for high-NA EUVL
27. Recess metrology challenges for 3D device architectures in advanced technology nodes
28. Regularized autoencoder for the analysis of multivariate metrology data
29. E-beam metrology-based EUVL aberration monitoring
30. Unbiased roughness measurements from low signal-to-noise ratio SEM images
31. Probabilistic process window: a new approach to focus-exposure analysis
32. Chemically amplified resist CDSEM metrology exploration for high NA EUV lithography
33. High NA EUV: a challenge for metrology, an opportunity for atomic force microscopy
34. In-line metrology for vertical edge placement control of monolithic CFET using CD-SEM
35. Advanced high-voltage e-beam system combined with an enhanced D2DB for on-device overlay measurement
36. Direct yield prediction from SEM images
37. Frequency-informed deep-learning denoising method supporting sub-nm metrology for high NA EUV lithography
38. Flare mitigation strategies in extreme ultraviolet lithography
39. Extraction of roughness measurements from thin resists with low signal-to-noise-ratio (SNR) SEM images by applying deep learning denoiser
40. Influence of photoresist thinning and underlayer film on e-beam using eP5 for high-NA patterning
41. Measuring and analyzing contact hole variations in EUV lithography
42. Enabling non-actinic EUV mask inspection using carbon nanotube pellicle
43. Diagnosing and removing CD-SEM metrology artifacts
44. Massive e-beam metrology and inspection for analysis of EUV stochastic defect
45. The unavoidable renaissance of electron metrology in the age of high NA EUV
46. Massive metrology and inspection solution for EUV by area inspection SEM with machine learning technology
47. SEM image denoising with unsupervised machine learning for better defect inspection and metrology
48. Multivariate analysis methodology for the study of massive multidimensional SEM data
49. Better prediction on patterning failure mode with hotspot aware OPC modeling
50. Characterizing Variation in EUV Contact Hole Lithography
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