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A 2D SnSe2 layered film‐based gas detector incorporating a floating‐gate device coupled with metal interconnect wiring structures is proposed and demonstrated for the first time. Linear amplification can be readily implemented using a coupling ratio design, which refers to the capacitance ratio between the gate and device in the sense amplifier circuits. A sensitivity of 102 mV ppm−1 can be obtained using the 2D SnSe2 layered film with a thickness of 10 nm. The 2D SnSe2 layered film‐based complementary metal–oxide–semiconductor (CMOS) gas detector features highly sensitive, wide, and adjustable dynamic ranges with a real‐time response of the sub‐ppm detection limit on NO2 gas. In addition, the synthesis process of the SnSe2 layered film can occur at a low temperature and be operated at room temperature. Furthermore, 3 × 3 gas detector arrays with peripheral circuits demonstrate the functionality of multiple gas detection simultaneously and 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated, providing the spatial distribution of the gas concentration in a specific region. The performance of the proposed detector is comparable to that of the other state‐of‐the‐art gas sensors. [ABSTRACT FROM AUTHOR]