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Multifunctional Ion‐Sensitive Floating Gate Fin Field‐Effect Transistor with Three‐Dimensional Nanoseaweed Structure by Glancing Angle Deposition Technology.

Details

Language :
English
ISSN :
16136810
Volume :
18
Issue :
5
Database :
Complementary Index
Journal :
Small
Publication Type :
Academic Journal
Accession number :
155059091
Full Text :
https://doi.org/10.1002/smll.202104168