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26. Application of 'critical compositional difference' concept to the growth of low dislocation density (<10 to the power 4 / cm squared) In(sub x) Ga (sub 1-x) As (x < or = 0.5) on GaAs

34. Strain relaxation of GaNxAs(sub 1-x) on GaAs (OO1) grown by molecular-beam epitaxy

39. Electromigration in flip chip solder joints under extra high current density

40. Energy strategy for carbon dioxide emission reduction in Taiwan

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