Application of 'critical compositional difference' concept to the growth of low dislocation density (<10 to the power 4 / cm squared) In(sub x) Ga (sub 1-x) As (x < or = 0.5) on GaAs

Low dislocation density and high In content were observed in an experiment to study the dislocation density and residual strain in multilayer epitaxial compositions of In x Ga1-x As layers of differing formation grown on GaAs substrates. The experiment employed cross-sectional transmission electron microscopy (XTEM) and high-resolution x-ray diffraction analysis. The multilayer epitaxial structures were successfully grown and resulted in low dislocation density and high In content.