411 results on '"Lin, Horng-Chih"'
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2. Determination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pumping
3. Correction: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms
4. The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms
5. A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium–gallium–zinc oxide TFTs
6. Unveiling the nature of room-temperature-fabricated p-type SnO thin films: the critical role of intermediate phases, lattice disorder, and oxygen interstitials
7. Design and optimization of 30 V fully isolated nLDMOS with low specific on-resistance for HVIC applications
8. Few-photon Detection of Ge Quantum-dot Single-hole Transistors in Few-hole Regime under Visible Irradiation
9. Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
10. Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes
11. Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs from Room-temperature to Cryogenic Temperatures
12. Monolithically-Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing
13. Self-Organized Germanium Quantum Dots/Si$_{\text{3}}$N$_{\text{4}}$ Enabling Monolithic Integration of Top Si$_{\text{3}}$N$_{\text{4}}$-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing
14. Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain
15. Monolithic Integration of Top Si3N4 - Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing
16. Investigations on Transport Properties of Poly-silicon Nanowire Transistors Featuring Independent Double-Gated Configuration Under Cryogenic Ambient
17. Room-Temperature Fabrication of p-Type SnO Semiconductors Using Ion-Beam-Assisted Deposition
18. Electrical characteristics of amorphous In–Ga–Zn–O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows
19. T-Shaped Gated Poly-Si Thin-Film Transistor Technology for Advanced Logic and RF Applications
20. Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices
21. Characterizations of polycrystalline silicon nanowire thin-film transistors enhanced by metal-induced lateral crystallization
22. Resistive switching characteristics of multilayered (HfO2/Al2O3)n n = 19 thin film
23. Relationships between the crystalline phase of an IGZO target and electrical properties of a-IGZO channel film
24. Germanium Quantum-Dot Single-Hole Transistors with Self-organized Tunnel Barriers and Self-aligned Electrodes Using Ingenious Sidewall Spacer and Oxidation Techniques
25. Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO2/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform
26. Temperature-Dependent Narrow Width Effects of 28-nm CMOS Transistors for Cold Electronics
27. A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology
28. Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
29. Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices
30. Poly-silicon nanowire field-effect transistor for ultrasensitive and label-free detection of pathogenic avian influenza DNA
31. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
32. Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
33. Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors
34. Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer
35. Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors
36. Self-Organized Germanium Quantum Dots/Si3N4 Enabling Monolithic Integration of Top Si3N4-Waveguided Microdisk Light Emitters and p-i-n Photodetectors for On-Chip Sensing
37. The Wonderful World of Designer Ge Quantum Dots
38. Impact of asymmetrical source/drain offsets on the operation of dual-gated poly-Si junctionless nanowire transistors
39. A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects
40. Breakdown Characteristics of Ultra-Thin Gate Oxides Caused by Plasma Charging
41. Characteristics of Dual-gated Poly-Si Junctionless Nanowire Transistors with Asymmetrical Source/drain Offsets
42. Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime
43. Improving breakdown voltage for 120 V level up shifter by using vertical and lateral assisted depletion layers in 0.35 μm CMOS technology
44. A novel photoresist-based film-profile engineering scheme for fabricating double-gated, recess-channel IGZO thin-film transistors
45. Study on random telegraph noise of high-κ/metal-gate gate-all-around poly-Si nanowire transistors
46. Trapping Depth and Transition Probability of Four-Level Random Telegraph Noise in a Gate-All-Around Poly-Si Nanowire Transistor
47. Coordinated and Simultaneous Formation of Paired Ge Quantum Dots by Thermal Oxidation of Designer Poly-SiGe Spacer Structures
48. Plasma-induced charging damage in ultrathin (3-nm) gate oxides
49. Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
50. Degradation Mechanisms of MILC P-Channel Poly-Si TFTs under Dynamic Hot-Carrier Stress Using a Novel Test Structure
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