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Plasma-induced charging damage in ultrathin (3-nm) gate oxides
- Source :
- IEEE Transactions on Electron Devices. July, 2000, Vol. 47 Issue 7, p1355, 6 p.
- Publication Year :
- 2000
-
Abstract
- Ultrathin gate oxides were examined for plasma-induced charging damage.
Details
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.64753528