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Petioles of non-heading Chinese cabbage are not only an important edible part but also a conduit for nutrient transport, holding significant agricultural and research value. In this study, we conducted a comprehensive genetic analysis of petiole-related traits using a segregating population. Modern quantitative genetic approaches were applied to investigate the genetic regulation of petiole thickness. The results indicated that petiole thickness is a quantitative trait, and the identified genetic model was consistent with two pairs of additive-dominant main genes and additive-dominant polygenes (2MG-AD). BSA-seq analysis identified a major effect of QTL controlling petiole thickness on chromosome A09: 42.08–45.09 Mb, spanning 3.01 Mb, designated as QTL-BrLH9. Utilizing InDel markers, the interval was narrowed down to 51 kb, encompassing 14 genes with annotations for 10 of them. Within the interval, four mutated genes were detected. Combined with gene annotation, protein sequence analysis, and homology alignment, it was found that BraA09g063520.3C's homologous gene SMXL6 in Arabidopsis (Arabidopsis thaliana (L.) Heynh) is an inhibitor of the coding and synthesis of the strigolactone pathway. Strigolactone (SLs) plays an important role in plant growth and development. The cloning results showed that multiple frameshift mutations and non-synonymous mutations occurred on the exon. The qPCR results showed that the expression of the gene was significantly different between the two parents at the adult stage, so it was speculated that it would lead to changes in petiole thickness. BraA09g063520.3C was predicted as the final candidate gene. [ABSTRACT FROM AUTHOR]

At present, there are few studies considering both nonlinear and fractional characteristics of suspension in vehicle systems. In this paper, a fractional nonlinear model of a quarter vehicle with two-degree-of-freedom (2-DOF) is innovatively proposed to describe the suspension system containing the viscoelastic material metal rubber. Given the lack of a general calculation scheme for the multi-degree-of-freedom fractional-order incremental harmonic balance method (IHBM), a general calculation scheme for the 2-DOF incremental harmonic balance method for nonlinear systems with fractional order is derived. The nonlinear dynamical properties of the presented model are acquired using this method. The accuracy of the proposed method is verified through a comparison with the power series expansion method. Afterward, the effects of the various parameters on the dynamic performance are analyzed. The vibration peak value of the fractional-order model is significantly higher than that of the integer-order model (IOM). Therefore, the suspension parameters should be designed with a margin when using IOM. [ABSTRACT FROM AUTHOR]

[Display omitted] Linear piezoelectric materials offer new opportunities for next-generation multifunctional micro/nano systems on chip aside from ferroelectrics. However, the advantage of quantitative pressure sensing of linear piezoelectric materials over ferroelectrics has not been demonstrated, while the thermal stability of linear piezoelectric zinc oxide (ZnO) is yet to be evaluated. In this work, pressure sensors based on linear piezoelectric undoped ZnO and ferroelectric vanadium doped ZnO (V-ZnO) films are studied side by side. Both films possess similar fiber textures oriented along the polar ZnO [0 0 2] direction, yet each of the V-ZnO grains consists of strip-like domains observed by SEM. Applying triangular-wave pressures, the linear piezoelectric ZnO sensor generates triangular-wave voltage signals that are one-to-one linearly correlated to the applied pressure, showing decisive advantages for quantitative pressure sensing compared to the 'sail-like' voltage signals of the ferroelectric V-ZnO sensor that is many-to-one correlated to the applied pressure. Superior thermal stability is demonstrated in the linear piezoelectric ZnO sensor showing stable pressure sensing properties up to 450 °C compared to the degraded sensing properties of the ferroelectric V-ZnO sensor at 150 °C. The thermally stable piezoelectric sensors for quantitative pressure sensing based on linear piezoelectric ZnO films serve as candidates for high-performance multifunctional micro/nano systems. [ABSTRACT FROM AUTHOR]

The ferromagnetic properties are investigated in single crystal ZnO nanorods with heavy codoping of 28 at. % Mn and 1 at. % Fe fabricated by vapor phase transport. The electron energy loss spectroscopy and x-ray photoelectron spectroscopy confirmed that Mn and Fe dopants are, respectively, +2 and +3 valence states, where Raman scattering exhibited additional peaks at 308 cm−1, 458 cm−1, 480 cm−1, 504 cm−1, 516 cm−1, 530 cm−1, and 569 cm−1, associated with MnFe dopants. Compared with undoped and Mn doped ZnO nanostructures, the MnFe-codoped ZnO nanorods are strongly ferromagnetic below Tc of 39 K and around room temperature. The ferromagnetic behavior can be mainly attributed to the carrier-mediated Ruderman–Kittel–Kasuya–Yosida mechanism below Tc and the defect-induced bound magnetic polaron mechanism around room temperature. [ABSTRACT FROM AUTHOR]

Manufacturing high‐quality zinc oxide (ZnO) devices demands control of the orientation of ZnO materials due to the spontaneous and piezoelectric polarity perpendicular to the c‐plane. However, flexible electronic and optoelectronic devices are mostly built on polymers or glass substrates which lack suitable epitaxy seeds for the orientation control. Applying cubic‐structure seeds, it was possible to fabricate polar c‐plane and nonpolar m‐plane aluminium‐doped zinc oxide (AZO) films epitaxially on flexible Hastelloy substrates through minimizing the lattice mismatch. The growth is predicted of c‐plane and m‐plane AZO on cubic buffers with lattice parameters of 3.94–4.63 Å and 5.20–5.60 Å, respectively. The ∼80 nm‐thick m‐plane AZO film has a resistivity of ∼11.43 ± 0.01 × 10−4 Ω cm, while the c‐plane AZO film shows a resistivity of ∼2.68 ± 0.02 × 10−4 Ω cm comparable to commercial indium tin oxide films. An abnormally higher carrier concentration in the c‐plane than in the m‐plane AZO film results from the electrical polarity along the c‐axis. The resistivity of the c‐plane AZO film drops to the order of 10−5 Ω cm at 500 K owing to the semiconducting behaviour. Epitaxial AZO films with low resistivities and controllable orientations on flexible substrates offer optimal transparent electrodes and epitaxy seeds for high‐performance flexible ZnO devices. [ABSTRACT FROM AUTHOR]

The iodide interplay with polar Zn2+ and O2− induced nonpolar [10 1 ¯ 0] ZnO nanowires is fabricated via a simple vapor phase transport at a temperature of as low as 250 °C that is compatible with the nanodevice processing technique. As-fabricated nanowires exhibit single crystalline hexagonal wurtzite structures and grow along the [10 1 ¯ 0] direction instead of the conventional polar [0001] direction. The growth evolution can be explained by the synergy of the vapor–liquid–solid process and iodide direction-modulation. The electrical measurements demonstrate that the mobility of the PbI2-induced [10 1 ¯ 0] nanowires is significantly improved in comparison with that of the BiI3-modulated [11 2 ¯ 0] ones. These unique nonpolar nanowires are promising for improved high efficiency nanodevices. [ABSTRACT FROM AUTHOR]

Low texture spreads of single‐crystalline‐like materials are critical for high performance of low‐cost flexible semiconductors and second‐generation high‐temperature superconductors based on metal foils. For texture improvement, a single‐crystalline‐like Ag film is epitaxially grown on an ion‐beam‐assisted deposition TiN substrate using magnetron sputtering. Ultra‐low texture spreads are found in the thin Ag film (∼330 nm), with an out‐of‐plane texture spread (Δω) of ∼1.03° and an in‐plane texture spread (Δϕ) of ∼1.34°. Compared with the texture spreads of the TiN substrate, Δω and Δϕ of the Ag film are reduced by ∼42 and ∼79%, respectively. Applying this Ag buffer, the texture spreads of a single‐crystalline‐like Ge film are reduced by ∼37% (Δω) and ∼36% (Δϕ). Factors contributing to the texture improvement by Ag are studied using single‐crystalline‐like Ag films with various thicknesses. [ABSTRACT FROM AUTHOR]

Nickel silicides are widely used as contact materials for electronic devices based on silicon (Si). However, they have been predominantly fabricated by annealing separate Ni and Si phases which leads to phase and structural complexity. In this letter, direct epitaxial growth of a single-phase nickel disilicide (NiSi2) thin film by sputter deposition of NiSi2 is achieved on low-cost and flexible Hastelloy tapes which offers a promising route to fabricate low-cost, flexible electronic devices. Biaxially textured titanium nitride (TiN) is applied as the seeding layer and the diffusion barrier under NiSi2. An epitaxial relationship of (001)⟨100⟩NiSi2 ǁ (001)⟨110⟩TiN is observed with an extra-large lattice mismatch (∼10.3%) between NiSi2 and TiN. Both the bonding similarity and the passivation effect by hydrogen promote the epitaxial growth of NiSi2 on TiN. The flat and smooth NiSi2 thin film consists of grains with a size of 50–100 nm. An epitaxially grown Si film on NiSi2 further demonstrates the potential of manufacturing high-performance Si flexible electronics with NiSi2/TiN/Hastelloy as the direct contact through this approach. [ABSTRACT FROM AUTHOR]

Single-crystalline-like germanium (Ge) templates were demonstrated on low-cost, flexible metal substrates and have been used to fabricate III–V materials and devices for photovoltaics and flexible electronics applications. However, these Ge templates, fabricated by magnetron sputtering or plasma enhanced chemical vapor deposition, contain a high density of defects. In order to improve the performance of optoelectronic devices made using the Ge templates, a homo-epitaxial Ge layer has been additionally grown by a liquid phase epitaxy (LPE) method. The LPE Ge layer is composed of significantly larger grains (∼26 μm) compared to that of the Ge template (∼200 nm). This large size of the LPE Ge grains effectively reduces the volume fraction of grain boundaries. The LPE Ge shows an out-of-plane texture Δ̉ of ∼0.63° and an in-plane texture ΔΦ of ∼1.26°, which signify improvements of ∼39.3% and ∼76.6% compared to that of the vapor-deposited Ge template, respectively. Further, the LPE Ge is strain free, compared to the strained Ge template hetero-epitaxially grown on cerium oxide. Defects caused by low-angle grain boundaries, impurities and strain relaxation in the Ge template are found to be suppressed in the LPE Ge. The threading dislocation density is roughly estimated to be ∼5 × 106 cm−2 in the LPE Ge compared to ∼1 × 1010 cm−2 in the Ge template. [ABSTRACT FROM AUTHOR]

• The genetic diversity was comprehensively evaluated based on morphological and SSR markers. • 49 out of 66 morphological characteristics presented coefficient of variation (CV) greater than 51%. • Seven main phenotypic components were able to justify 85.17% of total variance. • Growth potential was significantly correlated with flower sex, stigma length, grooves on fruit side, and sepal curl pose characters. • Bud sports, synonymous, and offspring persimmons could be successfully identified by morphological and SSR markers. Persimmon (Diospyros kaki Thunb.) is an economically important fruit crop that originates from China, and has been cultivated for thousands of years. However, the genetic variation remains largely unknown. Evaluation of agronomic traits and genetic diversity in different persimmon germplasm plays an essential role in understanding of the persimmon breeding application and efficient resource utilization. Herein, we carried out the comprehensive evaluation of genetic diversity of persimmon germplasm based on large-scale morphological traits, and SSR markers. A total of 242 accessions were evaluated using 66 phenotypic characteristics and 12 highly polymorphic SSR markers. The results showed that 28 out of 66 descriptive characteristics presented coefficient of variation (CV) greater than 40%, indicating the different accessions of persimmon had rich genetic diversity. Furthermore, it showed varying degrees of correlation among 66 morphological traits. Correlation coefficient analysis present that growth potential was significantly correlated with flower sex, stigma length, grooves on fruit side, and sepal curl pose characters. In addition, we extracted seven components with justifying 85.17% of total variance based on principal component analysis (PCA), and fruit-related traits were the most important variables in distinguishing accessions. Combined cluster analysis based on morphological traits and SSR markers, we identified the four accessions of bud sport, 48 persimmon of synonyms, and two varieties of offspring. This study sheds light on genetic variation of persimmon based on morphological and SSR markers, and provides a valuable resource for marker-assisted breeding of this important fruit crop. [ABSTRACT FROM AUTHOR]

[Display omitted] • We achieved ultrathin epitaxial ZnO thin-film actuators on flexible Hastelloy tapes. • We discovered higher piezoelectric constants in thinner epitaxial ZnO thin films. • We demonstrated tunable linear piezoelectric properties in strained ZnO thin films. Linear piezoelectric materials and devices potentially serve as high-accuracy and fast-response sensors and actuators. However, linear piezoelectrics have been scarcely studied, while tuning the linear piezoelectric response of undoped ZnO remains a challenge. Here, linear piezoelectric zinc oxide (ZnO) thin film actuators are fabricated with a sandwich structure of AZO/ZnO/AZO epitaxially on CeO 2 /Hastelloy substrates, with AZO denoting the aluminum-doped ZnO electrodes and CeO 2 denoting the cerium oxide buffer. Due to the lattice mismatch between ZnO and CeO 2 , compressive in-plane lattice strains are detected. Through varying the ZnO layer thickness, a strong correlation is found between the in-plane epitaxial strain and the piezoelectric constant which proves an effective method to improve the linear piezoelectric response of ZnO. Further, the better linear piezoelectric response of the thinner flexible ZnO layer resolves the controversy between the performance and the deformation-durability of flexible piezoelectric ZnO devices. The vertical piezoelectric constant of the ultrathin (∼32 nm) ZnO film is ∼ 8.14 pm/V, which is highly suitable for positioners working at the picometer scale. Future works harnessing the epitaxial strains to further improve the piezoelectric constant of ZnO materials potentially lead to the prosperity of linear piezoelectrics. [ABSTRACT FROM AUTHOR]

[Display omitted] • We achieved ultrathin flexible AZO electrodes with low resistivities (less than100 μΩ•cm). • We demonstrated the mechanical robustness of ultrathin flexible AZO electrodes. • We discovered abnormally high carrier concentrations in strained epitaxial AZO. Aluminum-doped zinc oxide (AZO) thin films are popular transparent electrodes for optoelectronics and photovoltaics. However, next generation flexible devices demand not only high conductivities but also low thicknesses in AZO electrodes to stay robust against deformations. The two requirements contradict each other due to the scattering of carriers at grain boundaries in polycrystalline AZO electrodes. Herein, this work develops ultrathin, highly conductive, single-crystalline, and mechanically robust AZO electrodes on flexible Hastelloy substrates. The epitaxial growth of AZO on polycrystalline Hastelloy is empowered by an advanced buffer architecture topped with a biaxially-textured MgO layer. Thereby, a c -axis epitaxial strain is generated in the AZO electrodes and then regulated by varying the thickness of the electrodes. Abnormally high carrier concentrations are detected in the AZO electrodes likely caused by the piezopotential generated by the epitaxial strain. While the highest resistivity value of the epitaxial AZO electrodes is within the mainstream values of AZO electrodes on various substrates, a resistivity as low as ~22 μΩ•cm is demonstrated in the ultrathin electrode with a thickness of ~28 nm. The mechanical durability of the ultrathin AZO electrode is validated by bending tests of 1000 cycles. [ABSTRACT FROM AUTHOR]

[Display omitted] • We achieved epitaxial linear-piezoelectric ZnO films on flexible substrates. • We enhanced the linear-piezoelectric constant of ZnO with epitaxial strains. • We proved the trivial impacts of textures on the piezoelectric constant of ZnO. Ferroelectrics are popular for sensors, actuators and transducers. However, the energy barrier for reversing the polarization leads to extra energy losses, while the hysteresis causes phase-lags and non-linearities between input and output signals. The high piezoelectric constants of ferroelectrics dictate the figure-of-merit of piezoelectric devices. Enhancing the piezoelectric constant of linear-piezoelectrics potentially leads to next-generation piezoelectric devices free from issues associated with ferroelectrics. By epitaxial growth of undoped ZnO films on flexible Hastelloy substrates, we demonstrated an ~85% improvement in the piezoelectric constant, and more importantly maintained the linearity of the piezoelectric response. Strong out-of-plane and in-plane crystallographic alignments are detected in the epitaxial sample, yet modeling of the effective thin-film piezoelectric constant shows only a limited contribution of the optimized textures. The improvement in the piezoelectric response is ascribed mostly to the in-plane epitaxial strain resulted from the lattice mismatch of ZnO to the substrate. The epitaxial ZnO film on Hastelloy promisingly offer high-precision positioners with nano-/pico-meter resolutions. Enhancing the piezoelectric constant by strain engineering potentially removes the barrier for applications of linear-piezoelectrics and enriches the piezoelectric research community. [ABSTRACT FROM AUTHOR]

• Simple structure of cube-textured conductive TiN by direct deposition on metal foil. • Ion pre-treatment enables cube texture of TiN directly on polycrystalline substrate. • Ion Beam Assisted Deposition for TiN films with in-plane texture spread of only 5.6°. Single crystal-like titanium nitride (TiN) by ion beam assisted deposition (IBAD) method is a potential conductive and thermally-stable template for growing highly-oriented REBa 2 Cu 3 O 7−x (RE = rare earth) superconductor tapes as well as optoelectronics on flexible metal substrates. Previously, amorphous seed layers such as Al 2 O 3 and Y 2 O 3 were necessary for the biaxially-textured film growth by IBAD. Such nonconductive seed layers prevent an electrically-conductive path between functional film and bottom metal substrate such as flexible, electro-polished Hastelloy (EPH). An approach of Argon ion (Ar+) pre-treatment of EPH surface, followed by roll-to-roll IBAD process has been developed for a simplified architecture of cube-textured TiN directly on flexible metal substrate. Strong cube-textured TiN films with out-of-plane texture spread of 1.8° and in-plane texture spread of 5.6° were obtained by IBAD technique on flexible Hastelloy substrate without any intervening layers; this provides a conductive template for functional layers. Also, the ion pretreatment step is easily achieved in an IBAD system which simplifies the fabrication process. [ABSTRACT FROM AUTHOR]

• Niobium-doped indium oxide (InNbO) was prepared by co-sputtering technique. • InNbO is compact and uniform without obvious pores and cracks. • InNbO is cubic bixbyite polycrystalline structure. • The resistivity of InNbO is as low as 8.29 × 10–3 Ω· cm when the Nb content is 1.8 at%. • InNbO exhibits high optical transmittance from visible to near-infrared wavelength regions. Indium oxide (In 2 O 3) based thin films have attracted much attention due to their high transparency and low resistivity. In order to obtain good transmittance and high conductivity, niobium (Nb) element was chosen as dopant in In 2 O 3 in this study. Nb-doped In 2 O 3 thin films (InNbO) were deposited on substrate by co-sputtering technique. The influence of Nb content on the structural, optical and electrical properties of InNbO thin films was systematically investigated. These thin films are compact and uniform without obvious pores and cracks. And InNbO is cubic bixbyite structure similar to In 2 O 3. When Nb content is 1.8 at%, the resistivity of InNbO is as low as 8.29 × 10−3 Ω·cm. The prepared thin films exhibit high optical transmittance from visible to near-infrared wavelength regions. The average transmittance of InNbO thin films can reach 80.74 % in visible light range (380 ∼ 750 nm), and 75.71 % in near-infrared region (750 ∼ 2400 nm). [ABSTRACT FROM AUTHOR]

To enhance heat transfer and reduce fouling of the finned-tube surface in economizers of coal-fired power plants, heat transfer and pressure drop characteristics for H-type finned oval tube with longitudinal vortex generators (LVG) and dimples, both in-line and staggered arrangements, are studied experimentally under flue dust condition. In addition, the ash samples and heat exchanger surfaces after the test are analyzed to help understanding the ash fouling and tube wear mechanisms. Compared to the original H-type finned oval tube, the Nusselt number of H-type finned oval tube bank with longitudinal vortex generators and dimples is improved by 34.5-41.7% (in-line arrangement) and 28.1-31.7% (staggered arrangement) within the studied Reynolds numbers, while the Euler number is increased by 21.9-28.3% (in-line arrangement) and 19% (staggered arrangement) in the clean finned-tube surface state. In the stable fouling state, the Nusselt number is improved by 37.7-42.3% (in-line arrangement) and 27.8-45.1% (staggered arrangement), while the Euler number is increased by 22.9-25.2% (in-line arrangement) and 33.3-42% (staggered arrangement). The results show that the novel fin structures can both inhibit fouling and enhance heat transfer effectively. [ABSTRACT FROM AUTHOR]

This work presents a materially and structurally designed barrier thin film with a self-wrinkling morphology, which consists of composites of amorphous alumina (a-Al 2 O 3) and polycrystalline zinc oxide (ZnO). The pure ZnO, Al 2 O 3 films, and Al 2 O 3 -ZnO composited film are deposited on polyethylene terephthalate (PET) by magnetron co-sputtering at room temperature. The water vapor transmission rate (WVTR) for the composited film with about 30 % ratio of Al 2 O 3 to ZnO is down to 0.026 g·m−2·day−1 from 1.184 g·m−2·day−1 of pure ZnO film at 38 °C/90 % RH, indicating that the nanocomposite structure of amorphous Al 2 O 3 and crystalline ZnO can significantly improve the water-resistance performance. Theoretical calculations demonstrate that the amorphous Al 2 O 3 can dramatically suppress the defect fraction within ZnO from 4.65 % to 0.08 %. Furthermore, a self-wrinkling morphology with Al 2 O 3 -ZnO composited film deposited on PET/acrylic is designed to have the WVTR value as low as 1.30 × 10−3 g·m−2·day−1. Due to the stress release when forming micro-scale wrinkles, the more smooth and dense Al 2 O 3 -ZnO composited film can markedly sharpen up the barrier property. The low WVTR barriers via amorphous and crystalline hybrid composites with self-wrinkling morphology by magnetron sputtering potentially serve as a low-cost and large-scale production path for electronics encapsulation as compared to atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). [Display omitted] • Al 2 O 3 -ZnO film with an appropriate Al 2 O 3 ratio reduces water vapor transmission rate. • Amorphous Al 2 O 3 -crystalline ZnO hybrid film is deposited by magnetron co-sputtering. • A defect-mediated model for a single film on PET is proposed and applied to the system. • Al 2 O 3 -ZnO film with self-wrinkling morphology markedly sharpens up barrier property. [ABSTRACT FROM AUTHOR]

This work presents a materially and structurally designed barrier thin film with a self-wrinkling morphology, which consists of composites of amorphous alumina (a-Al 2 O 3) and polycrystalline zinc oxide (ZnO). The pure ZnO, Al 2 O 3 films, and Al 2 O 3 -ZnO composited film are deposited on polyethylene terephthalate (PET) by magnetron co-sputtering at room temperature. The water vapor transmission rate (WVTR) for the composited film with about 30 % ratio of Al 2 O 3 to ZnO is down to 0.026 g·m−2·day−1 from 1.184 g·m−2·day−1 of pure ZnO film at 38 °C/90 % RH, indicating that the nanocomposite structure of amorphous Al 2 O 3 and crystalline ZnO can significantly improve the water-resistance performance. Theoretical calculations demonstrate that the amorphous Al 2 O 3 can dramatically suppress the defect fraction within ZnO from 4.65 % to 0.08 %. Furthermore, a self-wrinkling morphology with Al 2 O 3 -ZnO composited film deposited on PET/acrylic is designed to have the WVTR value as low as 1.30 × 10−3 g·m−2·day−1. Due to the stress release when forming micro-scale wrinkles, the more smooth and dense Al 2 O 3 -ZnO composited film can markedly sharpen up the barrier property. The low WVTR barriers via amorphous and crystalline hybrid composites with self-wrinkling morphology by magnetron sputtering potentially serve as a low-cost and large-scale production path for electronics encapsulation as compared to atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). [Display omitted] • Al 2 O 3 -ZnO film with an appropriate Al 2 O 3 ratio reduces water vapor transmission rate. • Amorphous Al 2 O 3 -crystalline ZnO hybrid film is deposited by magnetron co-sputtering. • A defect-mediated model for a single film on PET is proposed and applied to the system. • Al 2 O 3 -ZnO film with self-wrinkling morphology markedly sharpens up barrier property. [ABSTRACT FROM AUTHOR]

Cancer starvation therapy based on catalytic chemistry of glucose oxidase (GOx) offers great potential for multimodal treatment, benefiting from both nutrition shutting-off and the oxidization product hydrogen peroxide (H 2 O 2). Herein, further optimization of such combined therapy was achieved by a cascade Nano-reactor, which was constructed by incorporating GOx into a bio-mimic upconversion nanosystem. The cascade began when GOx was delivered into tumor sites through homotypic targeting, facilitating selective starving of cancer cells and H 2 O 2 generation. Then, upon 980 nm laser excitation, the 470 nm light emitted by upconversion nanoparticles (NaYF 4 : Yb, Tm) photolyzed H 2 O 2 into hydroxyl radical for phototherapy, superior to direct photolysis by blue light with limited tissue penetration depth. Meanwhile, the 800 nm emission of UCNPs was used to track the in vivo fate and tumor targeting ability of the Nano-reactor. Radionuclide imaging further confirmed the targeting of the Nano-reactor to subcutaneous 4T1 tumor and lung metastasis. Significantly enhanced therapeutic efficacy of this cascade starvation-phototherapy was validated in vitro and in vivo , suggesting the Nano-reactor as a smart, simple and strong system for cancer multimodal therapy. [ABSTRACT FROM AUTHOR]