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Your search keyword '"Li, Xing-Ji"' showing total 132 results
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132 results on '"Li, Xing-Ji"'

4. Investigating elastic constants across diverse strain-matrix sets

Author

Liu, Zhong-Li, Wei, Ya-Dong, Xu, Xiao-Dong, Li, Wei-Qi, Lv, Gang, Yang, Jian-Qun, Li, Xing-Ji, and Ekuma, Chinedu E.

Subjects
Condensed Matter - Materials Science, Physics - Computational Physics
Abstract

Elastic constants and mechanical properties play a pivotal role across multiple disciplines and engineering applications. We introduced the optimized high-efficient strain-matrix set (OHESS) that determines the second-order elastic constants of materials using the stress-strain method. Herein, we systematically investigate the computational efficiency of OHESS across a broad range of crystal systems and compare it with other notable stress-strain approaches, such as the single-element strain-matrix sets and the universal linear-independent coupling strains. Notably, our data affirm the superior efficacy of OHESS among the strain-matrix sets under consideration. We believe OHESS will markedly improve computational efficiency in determining the elastic constants and mechanical properties, becoming an indispensable tool for material research, design, and high-throughput screening., Comment: 14 pages, 2 figures

Published
2020

15. Drain-Leakage Degradation During Single-Event Burnout Experiments in N-Channel Power VDMOS Transistors

Author

Liu, Feng-Kai, Liu, Zhong-Li, Wu, Lei, Xu, Xiao-Dong, Liu, Shuo, Jin, Xin, Yang, Jian-Qun, and Li, Xing-Ji

Abstract

This article investigates the impact of bismuth-heavy ion and high-energy proton irradiation on single-event burnout (SEB) and complete off-state drain-leakage degradation (CO-DLD) in n-channel 115-V-rated vertical-diffused (VD) metal-oxide-semiconductor field-effect transistors (MOSFETs). Initially, bismuth-heavy ion irradiation experiments are conducted to determine the SEB failure threshold voltage (VSEB). CO-DLD is observed, and it is hypothesized that increased temperatures at the source contact and silicon surface may contribute to this degradation. Subsequent experiments with high-energy proton irradiation aim to examine the role of temperature in CO-DLD, eventually discounting it as a contributing factor. Displacement damage is then identified as the principal cause of CO-DLD, with this hypothesis being corroborated by technology computer-aided design (TCAD) simulations. The comprehensive analysis of both experiments and simulations concludes that temperature-induced source-contact degradation is not the primary driver of CO-DLD. Instead, displacement damage caused by bismuth-heavy ion and high-energy proton irradiation emerges as the predominant mechanism behind CO-DLD. This finding is significant as both experiments and simulations confirm that displacement damage leads to CO-DLD in VDMOS transistors, shedding light on protecting the VDMOS from degrading.

Published
2024
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20. Impact of ⁶⁰Co-γ Irradiation Pre-Treatment on Single-Event Burnout in N-Channel Power VDMOS Transistors

Author

Liu, Feng-Kai, Liu, Zhong-Li, and Li, Xing-Ji

Abstract

This letter discusses the impact of total ionizing dose (TID) on the single-event effect (SEE) in n-channel vertical-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs). Experiments were conducted involving60Co- $\gamma $ irradiation pre-treatment (CIPT) and krypton-heavy ion irradiation (KHII). Observations indicate that devices previously exposed to TID exhibited increased susceptibility to single-event burnout (SEB). Utilizing the subthreshold mid-gap technique (SMGT) enabled the distinction between interface traps and oxide charges, with their respective roles being analyzed and validated through technology computer-aided design (TCAD) simulations. The findings indicate that the decrease in the built-in potential ( $\varphi _{\text {B}}$ ) of the N+P junction and the enhanced activation of the inherent parasitic bipolar junction transistor (BJT) are significant contributing factors. This research highlights the critical importance of considering both individual radiation effects and the synergy of multiple effects when employing such devices in aerospace applications.

Published
2024
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33. Investigation on the performance of a homemade thulium-doped fiber laser oscillator

Author

吴闻迪 Wu Wen-di, 张 伟 Zhang Wei, 赵开祺 Zhao Kai-qi, 余 婷 Yu Ting, 叶锡生 Ye Xisheng, 孟 佳 Meng Jia, 于春雷 Yu Chun-lei, 曹 清 Cao Qing, 李 璇 Li Xuan, and 李兴冀 Li Xing-ji

Subjects
Thulium, Materials science, chemistry, business.industry, Fiber laser, Doping, chemistry.chemical_element, Optoelectronics, business, Atomic and Molecular Physics, and Optics
Published
2019
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40. Radiation effects of 50-MeV protons on PNP bipolar junction transistors.

Author

Huang, Yuan-Ting, 黄, 垣婷, Cui, Xiu-Hai, ĺ´", 秀海, Yang, Jian-Qun, 杨, ĺ‰'群, Ying, Tao, ĺş", 涛, Yu, Xue-Qiang, ä˝™, 雪强, Dong, Lei, č'Ł, 磊, Li, Wei-Qi, 李, 伟奇, Li, Xing-Ji, and 李, ĺ...´ĺ†€

Subjects
JUNCTION transistors, BIPOLAR transistors, DEEP level transient spectroscopy, RADIATION, PROTONS
Abstract

The effects of radiation on 3CG110 PNP bipolar junction transistors (BJTs) are characterized using 50-MeV protons, 40-MeV Si ions, and 1-MeV electrons. In this paper, electrical characteristics and deep level transient spectroscopy (DLTS) are utilized to analyze radiation defects induced by ionization and displacement damage. The experimental results show a degradation of the current gain and an increase in the types of radiation defect with increasing fluences of 50-MeV protons. Moreover, by comparing the types of damage caused by different radiation sources, the characteristics of the radiation defects induced by irradiation show that 50-MeV proton irradiation can produce both ionization and displacement defects in the 3CG110 PNP BJTs, in contrast to 40-MeV Si ions, which mainly generate displacement defects, and 1-MeV electrons, which mainly produce ionization defects. This work provides direct evidence of a synergistic effect between the ionization and displacement defects caused in PNP BJTs by 50-MeV protons. [ABSTRACT FROM AUTHOR]

Published
2022
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43. The Investigation on Drain-Source On-State Resistance of SiC power MOSFETs from Single Event Effects Experiment

Author

Mei Bo, Yang Jian-Qun, Zhen Liang, Li Pengwei, Li Xing-Ji, LV He, Yu Qingkui, XU Weixin, and Tang Min

Subjects
Materials science, stomatognathic system, business.industry, Optoelectronics, Irradiation, Conductivity, Power MOSFET, business, Thermal conduction, On resistance, Test sample, Event (particle physics), Voltage
Abstract

The forward resistance of the SiC power MOSFETs is an important parameter that affects the conductivity device. In order to evaluate the electrical properties of the sample after single-particle irradiation and the effect of changes on its function. In this paper, SiC power MOSFETs single-particle irradiation test after the test sample as the object, Using voltammetry to study V DS -I DS output characteristics and drain-source conduction characteristics. It gives a different V DS -I DS output characteristic parameters of the test samples and drain source on-state resistance with different drain-source bias voltages the law of change. It is pointed out that the internal unit damage after irradiation by single event irradiation of SiC power MOSFETs devices cause the change of the on resistance, it show that anti-single-event reinforcement design to provide reference by SiC power MOSFET devices.

Published
2018
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