Impact of ⁶⁰Co-γ Irradiation Pre-Treatment on Single-Event Burnout in N-Channel Power VDMOS Transistors

This letter discusses the impact of total ionizing dose (TID) on the single-event effect (SEE) in n-channel vertical-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs). Experiments were conducted involving60Co-<inline-formula> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula> irradiation pre-treatment (CIPT) and krypton-heavy ion irradiation (KHII). Observations indicate that devices previously exposed to TID exhibited increased susceptibility to single-event burnout (SEB). Utilizing the subthreshold mid-gap technique (SMGT) enabled the distinction between interface traps and oxide charges, with their respective roles being analyzed and validated through technology computer-aided design (TCAD) simulations. The findings indicate that the decrease in the built-in potential (<inline-formula> <tex-math notation="LaTeX">$\varphi _{\text {B}}$ </tex-math></inline-formula>) of the N+P junction and the enhanced activation of the inherent parasitic bipolar junction transistor (BJT) are significant contributing factors. This research highlights the critical importance of considering both individual radiation effects and the synergy of multiple effects when employing such devices in aerospace applications.