127 results on '"Lepilliet, Sylvie"'
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2. Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts
3. Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz
4. Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications
5. Optimization of a microelectromechanical systems (MEMS) approach for miniaturized microcantilever-based RF microwave probes
6. Invariance of DC and RF Characteristics of Mechanically Flexible CMOS Technology on Plastic
7. A G-Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology
8. Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes
9. Miniaturized Microcantilever-based RF Microwave Probes Using MEMS Technologies
10. Challenges to measure RF noise and intermodulation performances of mmW/THz devices
11. Filtre patch bi-bande 180/270 GHz en technologie BiCMOS 55 nm
12. Filtre patch à structure de type CSRR en technologie BiCMOS 55 nm
13. Tuner intégré large bande en gamme de fréquences millimétriques pour la caractérisation en technologie BiCMOS 55 nm
14. Kit d'étalonnage TRL pour la caractérisation sub-mmWave sous pointes de InP-HEMT
15. Dual-Band Patch Filter 180/270 GHz on BiCMOS 55nm
16. Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components
17. A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm Technology
18. Mm-wave Dual-Mode Patch Filters on 55-nm BiCMOS
19. In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy
20. Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes.
21. Design of Coupled Slow-Wave CPW Millimeter-Wave Bandpass Filter Beyond 100 GHz in 55-nm BiCMOS Technology
22. mm-Wave Through-Load Element for On-Wafer Measurement Applications
23. High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO 2 gate stack
24. Invariance of DC and RF Characteristics of Mechanically Flexible CMOS Technology on Plastic
25. Development of a Millimeter-Long Travelling Wave THz Photomixer
26. Analog/RF performance of multichannel SOI MOSFET
27. Improved characterization methology for MOSFETs up to 220 GHz
28. Design and Characterization of (140–220) GHz Frequency Compensated Power Detector
29. High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperature
30. Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides
31. Power Measurement Setup Development for On-Wafer Characterization at 185–191 GHz
32. Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band
33. Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology
34. Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts
35. Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz
36. 22nm Ultra-Thin Body and Buried Oxide FDSOI RF Noise Performance
37. RF characterization and small signal extraction on 22 nm CMOS fully-depleted SOI technology
38. Premier Système de Mesure Petit Signaux Deux Ports Complètement Intégré en Bande G
39. A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics.
40. Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz
41. On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization
42. Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths.
43. A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm
44. A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization
45. A D-band passive receiver with 10 dB noise figure for in-situ noise characterization in BiCMOS 55 nm
46. A 10 dBm Output Power D-Band Power Source With 5 dB Conversion Gain in BiCMOS 55nm
47. High performance CMOS with enhanced property of mechanical flexibility
48. RF and broadband noise investigation in high-k/metal gate 28-nm CMOS bulk transistor
49. InAlGaN/GaN HEMTs at Cryogenic Temperatures
50. GaN MEMS resonators : from demonstration to microsystem-compatible performances
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