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High-frequency and noise performances of 65-nm MOSFET at liquid nitrogen temperature
- Source :
- IEEE Transactions on Electron Devices. August, 2006, Vol. 53 Issue 8, p1902, 7 p.
- Publication Year :
- 2006
-
Abstract
- The high-frequency properties of very deep sub-micron MOSFETs are investigated at liquid nitrogen temperature and at room temperature. The improvement of the noise performances shown by the device at 78 K is explained by the decrease of the operating temperature, extrinsic resistance values and an improvement of the dynamic performances at 78 K.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 8
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.152273218