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The article describes a method of detecting the predicted theoretically transfer local perturbation effect on one of the interface flat liquid zone to another when it thermomigration in the crystal. The results of experimental studies of the features of the induced perturbation and its impact on the stability of the flat zone as a whole. It was found that the effect of induced instability could be the basis for a method of forming semiconductor wafers in volume of regular structures in the form of bands of deep electron-hole transitions and through the conducting channels. A method of using induced instability effect for silicon device structures.

The simulation of the photoluminescence and dark current-voltage characteristics of heterostructures with a single layer of quantum dots. The presence of the peak quantum transitions in the main points at 1,2 eV (modeling) and 1,12 eV (experimental). The experimental peak has a greater width (0,13 eV) at half maximum fundamental radiation transitions in quantum dots, compared to the modeled (0,06 eV). There is a shift of the experimental peak to longer wavelengths by about 65 meV, indicating that the presence in the dispersion structure the size of quantum dots. The dark current-voltage simulated characteristic at a temperature of 90 K and zero bias shows the value of the dark current density of 10-7 A/cm2, which is much smaller than the measurement results (10-6 A/cm2). There is a difference in the nature of the distribution depending on when the negative and positive displacement between experiment and simulation results associated with the presence of quantum dots larger.

The article presents research results of the crystal structure of the silicon regions, locally recrystallized in the process of thermomigration liquid silicon-aluminum areas of a silicon substrate. Selective etching of silicon is found that recrystallized in the channel, there are areas that have increased defects. Determined that these areas are located at the surfaces of the substrate, the depth of these areas does not exceed the thickness of the liquid zone. Out defective areas, the channel has low densities of dislocations and a high degree of monocrystalline silicon. Using the methods of x-ray diffractometry and transmission electron microscopy high resolution revealed that on the border of the channel and the substrate are dislocation half-stitch, which lie in the surface layers of the front and back sides of the substrate. In recrystallized areas are detected the {311} - defects.

A model for the study of generation-recombination processes in the direct intermediate band photovoltaic nanostructures was proposed. The model allows to calculate the functional characteristics and the efficiency of solar radiation conversion. The nanostructures with embedded quantum dots InAs / GaAs were experimentally grown. It is shown that the model enough correctly describes the experimental effect of increasing the shortcircuit current due an additional absorption of infrared photons.