THE PHOTOLUMINESCENCE AND DARK CURRENT VOLTAGE CHARACTERISTICS OF HETEROSTRUCTURES WITH InAs QUANTUM DOTS

The simulation of the photoluminescence and dark current-voltage characteristics of heterostructures with a single layer of quantum dots. The presence of the peak quantum transitions in the main points at 1,2 eV (modeling) and 1,12 eV (experimental). The experimental peak has a greater width (0,13 eV) at half maximum fundamental radiation transitions in quantum dots, compared to the modeled (0,06 eV). There is a shift of the experimental peak to longer wavelengths by about 65 meV, indicating that the presence in the dispersion structure the size of quantum dots. The dark current-voltage simulated characteristic at a temperature of 90 K and zero bias shows the value of the dark current density of 10-7 A/cm2, which is much smaller than the measurement results (10-6 A/cm2). There is a difference in the nature of the distribution depending on when the negative and positive displacement between experiment and simulation results associated with the presence of quantum dots larger.