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354 results on '"Lemiti, M."'

1. Absorbing photonic crystals for thin film photovoltaics

Author

Daif, O. El, Drouard, E., Gomard, G., Meng, X., Kaminski, A., Fave, A., Lemiti, M., Caurel, E. Garcia, Cabarrocas, P. Roca i, Ahn, S., Jeon, H., and Seassal, C.

Subjects
Condensed Matter - Other Condensed Matter, Physics - Optics
Abstract

The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an absorbing planar photonic crystal. We theoretically demonstrate this absorption enhancement through one or two dimensional patterning, and show the experimental feasibility through large area holographic patterning. Numerical simulations show over 50% absorption enhancement over the part of the solar spectrum comprised between 380 and 750nm. It is experimentally confirmed by optical measurements performed on planar photonic crystals fabricated by laser holography and reactive ion etching., Comment: 6 pages. SPIE Photonics Europe paper

Published
2010
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11. Tunnel junction I(V) characteristics: Review and a new model for p-n homojunctions.

Author

Moulin, N., Amara, M., Mandorlo, F., and Lemiti, M.

Subjects
SILICON solar cells, FIELD-effect transistors, TUNNELS, TUNNEL diodes, QUANTUM tunneling, RESONANT tunneling, SUBWAY design & construction
Abstract

Despite the widespread use of tunnel junctions in high-efficiency devices (e.g., multijunction solar cells, tunnel field effect transistors, and resonant tunneling diodes), simulating their behavior still remains a challenge. This paper presents a new model to complete that of Karlovsky and simulate an I (V) characteristic of an Esaki tunnel junction. A review of different analytical models of band-to-band tunneling models is first presented. As a complement to previous work on tunnel junction simulation, the transmission coefficient is precisely determined and incorporated, the valley current between the tunneling and drift regimes is included, and calculations of physical parameters are updated. It is found that the model works for a broad range of values of the forward bias. [ABSTRACT FROM AUTHOR]

Published
2019
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30. TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Porous Silicon

Author

Yamanaka, Junji, Usami, Noritaka, Amtablian, Sevak, Fave, Alain, Lemiti, M, Yamamoto, Chiaya, Nakagawa, Kiyokazu, Lemiti, Mustapha, INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and INL - Dispositifs Electroniques (INL - DE)

Subjects
010302 applied physics, Electron mobility, Materials science, business.industry, Strained silicon, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 021001 nanoscience & nanotechnology, Porous silicon, Microstructure, Epitaxy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Silicon-germanium, Crystallography, chemistry.chemical_compound, chemistry, 0103 physical sciences, Optoelectronics, Thin film, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy
Abstract

Strain-relaxed SiGe is an attractive material for use as a substrate of strained Si, in which carrier mobility is higher than that of bulk Si. The concept of this study is the use of porous Si as a sponge like substrate so that a SiGe lattice can relax without introducing dislocations. We produced porous Si specimens by electrochemical anodization and annealed them under a H2 atmosphere. Then, SiGe thin films were grown by gas-source molecular beam epitaxy. We observed the microstructure of the specimens using transmission electron microscopy. The result showed that we succeeded in producing a single-crys- tal continuous Si0.73Ge0.27 film with a 10% relaxation ratio and a low dislocation density on porous Si.

Published
2017

33. Electrical and structural properties of rapid thermally annealed boron-doped silicon films deposited by plasma-enhanced chemical-vapor deposition

Author

Jeanjean, P., Sicart, J., Sellitto, P., Robert, J.L., Bustarret, E., Grieshaber, W., Cali, J., Berre, M. Le, Lemiti, M., Pinard, P., and Conedera, V.

Subjects
Semiconductor films -- Research, Boron -- Research, Silicon oxide films -- Research, Semiconductor doping -- Research, Physics
Abstract

Analysis of the electrical, structural and piezoresistive properties of plasma-enhanced chemical vapor-deposited (PECVD) thin silicon layers with in situ boron doping and undergoing rapid thermal annealing shows that the silicon films have good electrical and transport properties and are suitable for providing SOI substrates for thin-film sensor devices. The electrical properties of the PECVD silicon films are better than those of low-pressure chemical-vapor deposited films. The low temperature coefficient of resistance for various dopant levels in the PECVD polysilicon films further support the good transport properties of the films.

Published
1994

40. Monolithic Integration of Diluted-Nitride III–V-N Compounds on Silicon Substrates: Toward the III–V/Si Concentrated Photovoltaics

Author

Durand, O., primary, Almosni, S., additional, Ping Wang, Y., additional, Cornet, C., additional, Létoublon, A., additional, Robert, C., additional, Levallois, C., additional, Pedesseau, L., additional, Rolland, A., additional, Even, J., additional, Jancu, J.M., additional, Bertru, N., additional, Le Corre, A., additional, Mandorlo, F., additional, Lemiti, M., additional, Rale, P., additional, Lombez, L., additional, Guillemoles, J.-F., additional, Laribi, S., additional, Ponchet, A., additional, and Stodolna, J., additional

Published
2018
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41. Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon.

Author

Forster, M., Cuevas, A., Fourmond, E., Rougieux, F. E., and Lemiti, M.

Subjects
IONIZATION (Atomic physics), SILICON research, HALL effect, ELECTRIC resistance, SCISSION (Chemistry)
Abstract

This paper investigates the importance of incomplete ionization of dopants in compensated p-type Si and its impact on the majority-carrier density and mobility and thus on the resistivity. Both theoretical calculations and temperature-dependent Hall-effect measurements demonstrate that the carrier density is more strongly affected by incomplete ionization in compensated Si than in uncompensated Si with the same net doping. The previously suggested existence of a compensation-specific scattering mechanism to explain the reduction of mobility in compensated Si is shown not to be consistent with the T-dependence of the measured carrier mobility. The experiment also shows that, in the vicinity of 300 K, the resistivity of compensated Si has a much weaker dependence on temperature than that of uncompensated silicon. [ABSTRACT FROM AUTHOR]

Published
2012
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42. Electronic properties of highly-doped and compensated solar-grade silicon wafers and solar cells.

Author

Veirman, J., Dubois, S., Enjalbert, N., Garandet, J.-P., and Lemiti, M.

Subjects
SEMICONDUCTOR wafers, SOLAR cells, SILICON, ELECTRIC properties, PHOSPHORUS
Abstract

Compensation effects are intensively studied on two highly doped ingots grown from solar-grade silicon feedstocks purified using metallurgical routes, through a comparison of the electrical properties at iso-carrier densities. Working at given carrier densities enables a clearer extraction of the compensation effects, at the wafer and solar cell levels. At the wafer level, the majority carrier mobility and the carrier lifetime are investigated. Regarding the mobilities, it was found that current models may underestimate the amount of incomplete ionization of boron leading to underestimated mobilities. In addition, the majority carrier mobility was found to be strongly affected at high compensation level. Regarding the carrier lifetimes, our results show that after a phosphorus diffusion step, dopants alone - and especially boron - can limit the lifetime in highly doped solar-grade silicon. At the cell level, I-V characteristics under standard illumination were studied. In particular, the observed reductions in short-circuit current on solar cells having a very high compensation level could be explained in terms of a compensation-induced reduction in the minority carrier mobility. We also report high conversion efficiencies of up to 15.9% on solar cells showing a boron content greater than two ppmw (2.6 × 1017 cm-3), which is generally considered unsuitable for solar cell manufacturing. [ABSTRACT FROM AUTHOR]

Published
2011
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43. Effect of TiO[sub x] on the formation of titanium silicide layer.

Author

El Omari, H., Boyeaux, J. P., Errkik, A., Lemiti, M., and Laugier, A.

Subjects
TITANIUM-silicon alloys, BACKSCATTERING, SPECTROMETRY
Abstract

The Al/TiO[SUBx]/Si, Ti/TiO[SUBx]/Si, and Mo/TiO[SUBx]/Si interfaces are studied, before and after thermal treatment, by secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The metal layer is selected with regard to the formation of a titanium silicide layer. The reductive nature of the metal was found to be very significant in the interdiffusion of Si and Ti (from titanium oxide). This interdiffusion has the advantage to form a thin titanium silicide layer, which is known to have low contact resistivity. The SIMS, RBS, XPS, and XRD analyses show that after annealing for 10 min at 850°C under hydrogen ambient, titanium silicide interfacial layers such as Ti[SUB5]Si[SUB3] and TiSi[SUB2] C54 were formed in the case of Al/TiO[SUBx]/Si and Ti/TiO[SUBx]/Si structures, respectively. There is no significant reaction between Mo and TiO[SUBx] and no Ti and Si interfacial reaction in the Mo/TiO[SUBx]/Si system. With thermodynamic considerations, we confirm all the results found in this study. [ABSTRACT FROM AUTHOR]

Published
2003
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45. GaAsPN Single and Tandem Solar Cells on Silicon

Author

Da Silva, Mickael, Cornet, Charles, Létoublon, Antoine, Levallois, Christophe, Rolland, Alain, Even, Jacky, Pedesseau, Laurent, Wang, Yanping, Le Corre, Alain, Boyer-Richard, Soline, Rale, P., Lombez, L., Guillemoles, J.-F., Fave, A., Mandorlo, F., Lemiti, M., Vallet, Maxime, Ponchet, Anne, Durand, Olivier, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), ANR-11-PRGE-0007,MENHIRS,Intégration monolithique de cellules solaires III-V à haut rendement sur substrats de silicium(2011), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)

Subjects
[SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; The development of a III‐V on silicon tandem cell is reported. GaAsPN material is considered for top cell absorber because of its quasi‐lattice matching with silicon and its pseudo‐direct bandgap at 1.7 eV. First, GaAsPN single cells are grown on both GaP and Si substrates, and their electrical performances are compared. It is found that the performances of the cell are limited by the low carrier mobility induced by the use of dilute nitrides. Then the first‐stage development of a tandem photovoltaic solar cell is reported, including a tunnel junction (TJ) made of Si.

Published
2016

46. First stage results on III-V/Si tandem cells using GaAsPN dilute-nitride

Author

Mickael da Silva, Charles Cornet, Antoine Létoublon, Christophe Levallois, Alain Rolland, Jacky Even, Laurent Pedesseau, Yanping Wang, Shijian Wang, Alain Le Corre, Soline Boyer-Richard, Rale, P., Lombez, L., Jean-François Guillemoles, Mandorlo, F., Lemiti, M., Fave, A., Anne Ponchet, Maxime Vallet, Olivier Durand, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), ANR-11-PRGE-0007,MENHIRS,Intégration monolithique de cellules solaires III-V à haut rendement sur substrats de silicium(2011), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2016

47. Toward the III-V/Si high efficiency tandem solar cell

Author

Durand, Olivier, Almosni, Samy, Da Silva, Mickael, Cornet, Charles, Létoublon, Antoine, Levallois, Christophe, Rolland, Alain, Even, Jacky, Pedesseau, Laurent, Loualiche, Slimane, Rale, P., Lombez, L., Guillemoles, J.-F., Mandorlo, F., Lemiti, M., Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), INL - Photovoltaïque (INL - PV), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), ANR-11-PRGE-0007,MENHIRS,Intégration monolithique de cellules solaires III-V à haut rendement sur substrats de silicium(2011), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2015

48. Effect of TiO(sub x) on the formation of titanium silicide layer

Author

Omari, H.El, Boyeaux, J.P., Errkik, A., Lemiti, M., and Laugier, A.

Subjects
Diffusion -- Research, Silicides -- Research, Silicides -- Electric properties, Titanium -- Research, Titanium -- Electric properties, Physics
Abstract

A method is presented to take advantage of the interdiffusion of Al/Ti and Si to form a thin titanium silicide layer, which is known to have low contact resistivity. The reductive nature of the metal was found to be very significant in the interdiffusion of Si and Ti (from titanium oxide).

Published
2003

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