1. Wide-band-gap InAlAs solar cell for an alternative multijunction approach.
- Author
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Leite, Marina S., Woo, Robyn L., Hong, William D., Law, Daniel C., and Atwater, Harry A.
- Subjects
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SOLAR cells , *BAND gaps , *INDIUM compounds , *MICROFABRICATION , *SEMICONDUCTOR junctions , *PHOTOLUMINESCENCE , *QUANTUM theory - Abstract
We have fabricated an In0.52Al0.48As solar cell lattice-matched to InP with efficiency higher than 14% and maximum external quantum efficiency equal to 81%. High quality, dislocation-free InxAl1-xAs alloyed layers were used to fabricate the single junction solar cell. Photoluminescence of InxAl1-xAs showed good material quality and lifetime of over 200 ps. A high band gap In0.35Al0.65As window was used to increase light absorption within the p-n absorber layer and improve cell efficiency, despite strain. The InAlAs top cell reported here is a key building block for an InP-based three junction high efficiency solar cell consisting of InAlAs/InGaAsP/InGaAs lattice-matched to the substrate. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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