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Control of Ge/Si intermixing during Ge island growth.
- Source :
-
Applied Physics Letters . 2/2/2009, Vol. 94 Issue 5, pN.PAG. 3p. 1 Black and White Photograph, 4 Graphs. - Publication Year :
- 2009
-
Abstract
- The surface energy and growth kinetics during Ge deposition on Si(001) were modified by growing the films in a phosphine environment. Islands were formed under a H2 flux as well as in a PH3/H2 atmosphere, but the morphologies were different. The presence of PH3 not only affects the island shape and size but also the composition profile. The dramatical inhibition of Ge/Si intermixing during growth leads to islands richer in Ge compared to undoped islands. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 94
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 36534167
- Full Text :
- https://doi.org/10.1063/1.3078289