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20 results on '"Lee, Meng-Chien"'

4. A Novel Method for Extracting Aging Load and Analyzing Load Characteristics in Residential Buildings

Author

Chang, Hsueh-Hsien, Lee, Meng-Chien, Chen, Nanming, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Kobsa, Alfred, editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Terzopoulos, Demetri, editor, Tygar, Doug, editor, Weikum, Gerhard, editor, Goebel, Randy, editor, Tanaka, Yuzuru, editor, Wahlster, Wolfgang, editor, Siekmann, Jörg, editor, Ali, Moonis, editor, Pan, Jeng-Shyang, editor, Chen, Shyi-Ming, editor, and Horng, Mong-Fong, editor

Published
2014
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6. First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Author

Chung, Yun-Yan, primary, Chou, Bo-Jhih, additional, Hsu, Chen-Feng, additional, Yun, Wei-Sheng, additional, Li, Ming-Yang, additional, Su, Sheng-Kai, additional, Liao, Yu-Tsung, additional, Lee, Meng-Chien, additional, Huang, Guo-Wei, additional, Liew, San-Lin, additional, Shen, Yun-Yang, additional, Chang, Wen-Hao, additional, Chen, Chien-Wei, additional, Kei, Chi-Chung, additional, Wang, Han, additional, Philip Wong, H.-S., additional, Lee, T. Y., additional, Chien, Chao-Hsin, additional, Cheng, Chao-Ching, additional, and Radu, Iuliana P., additional

Published
2022
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7. Deriving the Representational Space and Memorability of Object Concepts and Features

Author

Lee, Meng-Chien

Abstract

Why are some object concepts (e.g., windshield vs. toothpaste) more memorable than others? Prior studies have suggested that visual and semantic features (e.g., color) and typicality (e.g., for birds: robin vs. penguin) of object images influence the likelihood of being remembered with mixed success (Kramer et al., 2022). One reason for these modest effects may be due to the visual and memory spaces being predominantly modeled using Euclidean geometry, which may not reflect the true structure of the space. In this study, we examined whether an entirely different geometric relationship – such as a continuous hyperbolic space which approximates discrete hierarchies – explains differences in their memorability. Specifically, we hypothesized that image concepts would be geometrically arranged in hierarchical structures and that memorability would be explained by a concept’s depth in these hierarchical trees (where deeper concepts would be less remembered). To test this hypothesis, we constructed a hyperbolic representation space of object concepts (N=1,854) from the THINGS database (Hebart et al., 2019), which consists of naturalistic images of concrete objects, and a space of 49 feature dimensions (e.g., red, tall) derived from data-driven models. Using ALBATROSS (Stier et al., in prep.), a stochastic topological data analysis technique that detects underlying structures of data, we demonstrated that hyperbolic geometry efficiently captures the organization of object concepts and their memorability better than a Euclidean geometry. Specifically, we found that concepts closer to the center of the hyperbolic representational space are more prototypical and more memorable; in contrast, there was no consistent geometric organization of memorability and typicality in the Euclidean space. Taken together, we discover that concept typicality and depth in the hierarchical structure of image concepts contribute to how likely a concept is remembered across people.

Published
2023
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12. Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si 0.8 Ge 0.2 Through HfO 2 Dielectric Direct Deposition.

Author

Lee, Meng-Chien, Zhao, Yi-Yang, Chen, Wei-Lun, Wang, Shin-Yuan, Chen, Yi-Xuan, Luo, Guang-Li, and Chien, Chao-Hsin

Subjects
X-ray photoelectron spectroscopy, TRANSMISSION electron microscopes, DIELECTRICS, OXIDATION states, OXIDES
Abstract

This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high- $\kappa $ /Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of ~0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high- $\kappa $ /Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices. [ABSTRACT FROM AUTHOR]

Published
2022
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15. Impact of High-Temperature Annealing on Interfacial Layers Grown by O 2 Plasma on Si0. 5 Ge 0.5 Substrates.

Author

Lee, Meng-Chien, Lin, Hung-Ru, Lee, Wei-Li, Chung, Nien-Ju, Luo, Guang-Li, and Chien, Chao-Hsin

Subjects
*METAL oxide semiconductor capacitors, *X-ray photoelectron spectroscopy, *TRANSMISSION electron microscopes
Abstract

This article demonstrates the influence of high-temperature annealing on an interfacial layer (IL) grown by O2 plasma on Si0.5Ge0.5 substrates. The X-ray photoelectron spectroscopy results revealed that under an annealing temperature of 1000 °C, the concentration of germanium oxide in the IL decreased, and an IL with pure silicon oxide (~100%) was produced. With a decrease in germanium oxide concentration, the SiGe metal oxide semiconductor capacitor exhibited an excellent interface trap density of $1.6\times10$ 12 cm−2eV−1 with negligible hysteresis. Furthermore, compared with 1000 °C IL annealing, 800 °C IL annealing was more suitable for preferential SiO2 growth without relaxation and dislocation in the SiGe layer, as observed using a transmission electron microscope. [ABSTRACT FROM AUTHOR]

Published
2022
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17. High-Interface-Quality Hf-Based Gate Stacks on Si 0.5 Ge 0.5 Through Aluminum Capping.

Author

Lee, Meng-Chien, Lee, Wei-Li, Lin, Hung-Ru, Luo, Guang-Li, and Chien, Chao-Hsin

Subjects
TITANIUM nitride, ALUMINUM, TIN, DENSITY of states, ALUMINUM oxide
Abstract

We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of Al capping on TiN. The results revealed that the Al layer formed Al2O3, which functioned as a barrier against external oxygen diffusion, resulting in excellent interface quality. Furthermore, the density of oxide traps and flat-band voltage could be tuned using various ratios of Al to TiN at the top gate. Thus, an excellent interface state density and equivalent oxide thickness (EOT) of approximately 8 $\times \,\,10^{{10}}$ eV−1cm−2 and 1.3 nm were achieved for the gate stack on SiGe through Al capping on TiN. [ABSTRACT FROM AUTHOR]

Published
2021
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