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135 results on '"Laurent Chusseau"'

1. A New Perspective on Classical Ideal Gases

Author

Fabrice Philippe, Jacques Arnaud, and Laurent Chusseau

Subjects
ideal gas law, corpuscular concepts, classical gas theory, canonical single-corpuscle thermodynamics, gas stability, Gibbs paradox, Science, Astrophysics, QB460-466, Physics, QC1-999
Abstract

The ideal-gas barometric and pressure laws are derived from the Democritian concept of independent corpuscles moving in vacuum, plus a principle of simplicity, namely that these laws are independent of the kinetic part of the Hamiltonian. A single corpuscle in contact with a heat bath in a cylinder and submitted to a constant force (weight) is considered. The paper importantly supplements a previously published paper: First, the stability of ideal gases is established. Second, we show that when walls separate the cylinder into parts and are later removed, the entropy is unaffected. We obtain full agreement with Landsberg’s and others’ (1994) classical thermodynamic result for the entropy of a column of gas submitted to gravity.

Published
2013
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2. On Classical Ideal Gases

Author

Laurent Chusseau, Jacques Arnaud, and Fabrice Philippe

Subjects
ideal gas law, relativistic gases submitted to gravity, corpuscular concepts, classical gas theory, Democritus physics, canonical single-corpuscle thermodynamics, Science, Astrophysics, QB460-466, Physics, QC1-999
Abstract

We show that the thermodynamics of ideal gases may be derived solely from the Democritean concept of corpuscles moving in vacuum plus a principle of simplicity, namely that these laws are independent of the laws of motion, aside from the law of energy conservation. Only a single corpuscle in contact with a heat bath submitted to a z and t-invariant force is considered. Most of the end results are known but the method appears to be novel. The mathematics being elementary, the present paper should facilitate the understanding of the ideal gas law and of classical thermodynamics even though not-usually-taught concepts are being introduced.

Published
2013
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12. Markov model of quantum fluctuations at the transition to lasing of semiconductor nanolasers

Author

Laurent Chusseau, Fabrice Philippe, Arthur Vallet, Alain Jean-Marie, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Systèmes complexes, automates et pavages (ESCAPE), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Network Engineering and Operations (NEO ), Inria Sophia Antipolis - Méditerranée (CRISAM), Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), and ANR-15-CE24-0034,IDYLIC,Etudes des boites quantiques au sein de lasers à émission verticale et en cavité externe sous injection électrique pour la réalisation d'émetteurs bi-fréquence cohérent et compact(2015)

Subjects
Semiconductor laser, Physics, Photon, Markov chain, Nanolaser, Physics::Optics, Condensed Matter Physics, Markov model, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, 010309 optics, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Quantum mechanics, 0103 physical sciences, Energy level, Laser threshold, 010306 general physics, Lasing threshold, Quantum, Quantum fluctuation
Abstract

International audience; A Markov model of semiconductor nanolaser is constructed in order to describe finely the effects of quantum fluctuations in the dynamics of the laser, in particular by considering the transition to lasing. Nanolasers are expected to contain only a small number of emitters, whose semiconductor bands are simulated using true carrier energy states. The model takes into account carrier-carrier interactions in the conduction and valence bands, but the result is a huge Markov chain that is often too demanding for direct Monte-Carlo simulation. We introduce here a technique to split the whole chain into two subchains, one referring to thermalization events within the bands and the other to laser photonic events of interest. The model is applied to the analysis of laser transition and enlightens the coexistence of a pulse regime triggered by the quantum nature of the photon with the birth of the known coherent cw regime. This conclusion is highlighted by calculated time traces. We show that on the ultrasmall scale of nanolasers, we are unable to define perfectly the threshold.

Published
2019
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13. Modeling the Lamb mode-coupling constant of quantum well semiconductor lasers

Author

Fabrice Philippe, Alain Jean-Marie, Gaëlle Brévalle, Mehdi Alouini, Cyril Paranthoen, Laurent Chusseau, Arthur Vallet, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Systèmes complexes, automates et pavages (ESCAPE), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), ANR-15-CE24-0034, Agence Nationale de la Recherche, ANR-15-CE24-0034,IDYLIC,Etudes des boites quantiques au sein de lasers à émission verticale et en cavité externe sous injection électrique pour la réalisation d'émetteurs bi-fréquence cohérent et compact(2015), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), and Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)

Subjects
Physics, Coupling constant, Active laser medium, business.industry, Monte Carlo method, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, 7. Clean energy, Atomic and Molecular Physics, and Optics, law.invention, Computational physics, Semiconductor laser theory, 010309 optics, Optics, law, 0103 physical sciences, Mode coupling, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Spontaneous emission, 0210 nano-technology, business, Quantum well
Abstract

We theoretically compute the coupling constant C between two emission modes of an extended cavity laser with a multiple quantum-well active layer. We use an optimized Monte Carlo model based on the Markov chain that describes the elementary events of carriers and photons over time. This model allows us to evaluate the influence on C of the transition from a class A laser to a class B laser and illustrates that the best stability of dual-mode lasers is obtained with the former. In addition, an extension of the model makes it possible to evaluate the influence of different mode profiles in the cavity as well as the spatial diffusion of the carriers and/or the inhomogeneity of the temperature. These results are in very good agreement with previous experimental results, showing the independence of C with respect to the beating frequency and its evolution versus the spatial mode splitting in the gain medium.

Published
2020
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14. CONTROL OF A MOS INVERTER BY OUT-OF-BAND PULSED MICROWAVE EXCITATION

Author

François Torres, Jeremy Raoult, Patrick Hoffmann, Clovis Pouant, Laurent Chusseau, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Systèmes RF (XLIM-SRF), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, Transistor, 020206 networking & telecommunications, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Condensed Matter Physics, Upset, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, law.invention, Interference (communication), law, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Microelectronics, Waveform, Optoelectronics, Inverter, business, Microwave, Excitation, Hardware_LOGICDESIGN
Abstract

International audience; An intentional focusing of High-Power Microwave (HPM) energy on microelectronic systems can produce effects that will potentially upset or damage the target. However, the physical mechanisms at work within the device are not often well understood. We provide a detailed understanding of the physical mechanisms involved in a common-source Metal Oxide Semiconductor (MOS) transistor inverter when Pulsed Microwave Excitation (PME) in a frequency range from 10 MHz to 1 GHz is applied on the gate terminal. Our study is based on the measurements of the current waveforms on all transistor access and explains the MOS response with and without the Radio-Frequency (RF) interference.

Published
2017
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15. REMOTE EXTINCTION OF A 2.4 GHZ RF FRONT-END USING MILLIMETER-WAVE EMI IN THE NEAR-FIELD

Author

Jeremy Raoult, Laurent Chusseau, Pierre Payet, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, RF front end, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, Near and far field, 02 engineering and technology, 7. Clean energy, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, Optics, EMI, Extinction (optical mineralogy), Extremely high frequency, 0202 electrical engineering, electronic engineering, information engineering, business
Abstract

International audience; The effects of highly out-of-band electromagnetic interference (EMI) on an RF front-end are experimentally evaluated. Irradiation at 60 GHz with a moderate power is produced in the near-field owing to an open-ended WR15 waveguide fed by a Gunn diode. Surprisingly, we easily obtain the remote extinction of either the transmitter or the receiver of the front-end subject to EMI. The paper proposes a detailed analysis of both CW and chopped EMI by varying almost all experimental conditions, namely the polarization, target distance, and chopping mode. The latter shows most efficiency and evidences some long time scale dynamics in the induced perturbation.

Published
2017
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16. Identification of vulnerability within front-ends chips using 60 GHz near-field injection

Author

Pierre Payet, Jeremy Raoult, Laurent Chusseau, Radiations et composants (RADIAC), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Computer science, 020208 electrical & electronic engineering, 020206 networking & telecommunications, Near and far field, 02 engineering and technology, Fault injection, Chip, Electromagnetic interference, Rule of thumb, [SPI.TRON]Engineering Sciences [physics]/Electronics, Identification (information), [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Focus (optics), ComputingMilieux_MISCELLANEOUS, Vulnerability (computing)
Abstract

Following our previous demonstration of the effects of strongly out-of-band electromagnetic interferences on RF front-ends, an extended analysis is conducted on many chips. Rules of thumb are provided as a function of three parameters (frequency of operation, electronic function, package type) and a first explanation is given on the failure mechanism owing to simulations. Furthermore a care inspection is provided by raster-scanning of the chip surface allowing the identification of vulnerability areas. We focus here on this new methodology applied to commercial chips for which the exact layout remains unknown.

Published
2019

18. Building blocks and concepts for THz remote sensing and communications

Author

Jérémi Torres, Faycal Bouamrane, D. Crete, J.-F. Lampin, Henri Jaffrès, Loïc Morvan, Bernard Plaçais, F. Bondu, Guillaume Ducournau, P. Bortolotti, C. Larat, J.-M. George, Daniel Dolfi, Alberto Montanaro, Pierre Legagneux, Emilien Peytavit, A. De Rossi, Luca Varani, Pierre Seneor, M. Martin, M. Rosticher, J. Mangeney, Carlo Sirtori, S. S. Dhillon, Laurent Chusseau, B. Marcilhac, G. Pillet, Bruno Dlubak, Mehdi Alouini, Stefano Barbieri, Thales Research and Technology [Palaiseau], THALES, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Photonique THz - IEMN (PHOTONIQ THz - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Nano-THz, Laboratoire de physique de l'ENS - ENS Paris (LPENS (UMR_8023)), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Université Paris Diderot - Paris 7 (UPD7), Physique Mésoscopique, QUAD : Physique Quantique et Dispositifs, THALES [France], THALES [France]-Centre National de la Recherche Scientifique (CNRS), Photonique THz - IEMN (PHOTONIQUE THz - IEMN), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Université Paris Diderot - Paris 7 (UPD7)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique)

Subjects
[PHYS]Physics [physics], Computer science, Terahertz radiation, 020208 electrical & electronic engineering, Bandwidth (signal processing), Detector, Quantum cascade lasers, Detectors, Optical mixing, 02 engineering and technology, Remote sensing, Communications system, 020210 optoelectronics & photonics, Frequency modulation, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0202 electrical engineering, electronic engineering, information engineering, Graphene, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
Abstract

International audience; We present technological building blocks and concepts under study which could ease the build-up of future THz remote sensing and communication systems. Critical issues regarding such systems mainly rely on the availability of sensitive and compact detectors together with powerful, large bandwidth and versatile sources.

Published
2019
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19. Mode Coupling Measurement in Dual-Frequency Quantum Well-based VECSEL

Author

Alexandru Mereuta, Salvaore Pes, Cyril Hamel, Eli Kapon, Gaëlle Brévalle, Mathieu Perrin, Christophe Levallois, Hervé Folliot, Andrei Caliman, Mehdi Alouini, Cyril Paranthoen, Laurent Chusseau, Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Ecole Polytechnique Fédérale de Lausanne (EPFL), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), ANR-15-CE24-0034,IDYLIC,Etudes des boites quantiques au sein de lasers à émission verticale et en cavité externe sous injection électrique pour la réalisation d'émetteurs bi-fréquence cohérent et compact(2015), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Coupling constant, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Oscillation, dual-frequency laser, lamb coupling, Order (ring theory), Laser, law.invention, Wavelength, law, constant, Mode coupling, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Atomic physics, Constant (mathematics), Quantum well, vecsel, ComputingMilieux_MISCELLANEOUS
Abstract

We experimentally investigate the Lamb coupling constant C in InGaAlAs Quantum Wells active medium. An Optically-Pumped Vertical-External-Cavity Surface-Emitting Laser emitting at $1.54\ \boldsymbol{\mu} \mathbf{m}$ is designed to sustain the oscillation of two orthogonally polarized modes sharing the same active region while separated by 1 mm in the rest of the cavity. It enables to tune independently the two wavelengths and to apply differential losses in order to directly measure the coupling constant. We found C to be almost constant and equal to $0.839 \pm 0.023$ for a wavelength difference between the two eigenmodes ranging from 0.36 nm up to 10.8 nm.

Published
2019

20. Lamb mode-coupling constant in quantum-dot semiconductor lasers

Author

Mathieu Perrin, Mehdi Alouini, Arthur Vallet, Cyril Paranthoen, Laurent Chusseau, Radiations et composants (RADIAC), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), ANR-15-CE24-0034, Agence Nationale de la Recherche, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), and ANR-15-CE24-0034,IDYLIC,Etudes des boites quantiques au sein de lasers à émission verticale et en cavité externe sous injection électrique pour la réalisation d'émetteurs bi-fréquence cohérent et compact(2015)

Subjects
Physics, Coupling, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Laser, [SPI.TRON]Engineering Sciences [physics]/Electronics, law.invention, Semiconductor laser theory, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 020210 optoelectronics & photonics, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], law, Quantum dot, Mode coupling, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0202 electrical engineering, electronic engineering, information engineering, Atomic physics, Constant (mathematics), Homogeneous broadening, Lasing threshold
Abstract

International audience; In 1964, W. E. Lamb introduced a mode-coupling constant C to characterize the stability of a dual-mode laser. Considering quantum-dot semiconductor lasers, we calculate analytically C in the framework of a rate-equation model, which includes both the homogeneous broadening of the quantum-dot emission and the dot-to-dot carrier exchange due to wetting-layer-assisted lateral coupling. Although first established using fully symmetric laser parameters for both modes, this result is then extended numerically to nonsymmetric parameters and shows that C remains unchanged when the gain/losses are adjusted so that the two laser modes are brought to oscillate simultaneously. Finally, C is shown to depend on two parameters only encompassing the pumping, the gain material mainly through the homogeneous broadening and the dot-to-dot carrier exchange, and the cavity design. Above laser threshold, the analytic result predicts a stable dual-mode behavior whatever the conditions but with a margin that decreases drastically close to lasing threshold or at small beating frequencies.

Published
2018
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21. Intermodulation radar for RF receiver detections

Author

Laurent Chusseau, Christian Carel, Alexandre Martorell, Jeremy Raoult, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), THALES COMMUNICATIONS & SECURITY, and THALES

Subjects
020301 aerospace & aeronautics, Computer science, Acoustics, Bandwidth (signal processing), 020206 networking & telecommunications, 02 engineering and technology, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Harmonic analysis, Printed circuit board, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, 0203 mechanical engineering, law, Harmonics, 0202 electrical engineering, electronic engineering, information engineering, Electronics, Radio frequency, Radar, ComputingMilieux_MISCELLANEOUS, Intermodulation
Abstract

Nonlinear radars are often used to detect the presence of RF electronics. In the state-of-art most of researchers has chosen to exploit the second-harmonic response of target. But its antenna is usually not impedance-matched at these harmonics, requiring that the useful signal is radiated by unintentional antennas formed by traces on the circuit board. A strong incident power is therefore required to guarantee a detection with an acceptable range. In this paper we propose an intermodulation radar whose incident and reflected signals are both captured and emitted by the antenna of the target.

Published
2018

22. Modeling and analysis of Large signal RFI effects in MOS transistors

Author

F. Torres, Alain Reineix, Patrick Hoffmann, Laurent Chusseau, J. Raoult, Clovis Pouant, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), GRAMAT (DAM/GRAMAT), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Spice, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, Capacitance, law.invention, law, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Parasitic extraction, Electrical and Electronic Engineering, SPICE, business.industry, radio-frequency interference (RFI), Transistor, MOSFET transistor, 020206 networking & telecommunications, Condensed Matter Physics, Diffusion capacitance, Electromagnetic interference (EMI), Atomic and Molecular Physics, and Optics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Logic gate, Optoelectronics, Radio frequency, business, Hardware_LOGICDESIGN
Abstract

International audience; The ability of radio-frequency (RF) interference signals to upset or disrupt electronic equipment is a matter of concern, and identification of the physical mechanisms leading to device malfunction is of prime importance. This paper presents experimental and theoretical results and analyzes the effects of a large-signal microwave excitation up to 2 GHz on several commercial small-signal MOS transistors. For frequencies beyond the maximum operating frequency, experimental results show RF signal rectification in the devices, and these results are confirmed by SPICE simulations using extracted models for the transistors, including package and test circuit parasitics, with excellent agreement with experiments. Analysis of internal transistors currents and voltages finally leads to the conclusion that the observed rectification effect is not due to active nonlinearities of the devices, but rather due to the nonlinear overlap and parasitic drain–bulk diode capacitances of the MOS transistors. In particular, the role of the nonlinear voltage dependence of the junction capacitance is highlighted. Finally, a simplified model is proposed to reproduce this behavior.

Published
2018
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23. RF Front-Ends Nonlinearity Characterization Using Reflected Power

Author

Alexandre Martorell, Robin Marijon, Jeremy Raoult, Laurent Chusseau, Thales Alenia Space (TAS), THALES, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, RF front end, business.industry, Acoustics, 020208 electrical & electronic engineering, 020206 networking & telecommunications, Port (circuit theory), 02 engineering and technology, Condensed Matter Physics, Signal, Atomic and Molecular Physics, and Optics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Nonlinear system, Nonlinear distortion, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Radio frequency, Electrical and Electronic Engineering, Antenna (radio), business, ComputingMilieux_MISCELLANEOUS, Intermodulation
Abstract

The electromagnetic susceptibility to third-order intermodulation (IM3) of radio-frequency (RF) receiver front-ends is studied. Two-tone test is the most widely used nonlinear distortion characterization method. It produces IM components in operating bands of RF front-end, which are called in-band IM products and are caused by system nonlinearities. It is proposed here to measure the IM3 signal reflected by the system when two-tone excitation is applied to the antenna port. The method is shown to agree well with standard estimations of the nonlinear properties of various radio receiver front-ends with different designs. Devices are compared in terms of susceptibility to intermodulation.

Published
2017
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24. Disruption of a RF Front-End Subject to an Out-of-Band Signal

Author

Laurent Chusseau, Jeremy Raoult, Pierre Payet, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, RF front end, business.industry, Acoustics, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Signal, Electromagnetic interference, [SPI.TRON]Engineering Sciences [physics]/Electronics, Amplitude modulation, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, EMI, Out-of-band management, 0202 electrical engineering, electronic engineering, information engineering, Radio frequency, business, Frequency modulation
Abstract

International audience; This paper deals with the effects of an electromagnetic interference (EMI) from an out-of-band signal impinging on a 2.4 GHz RF receiver operating in the linear regime. The injection signal is radiated in the near-field above the circuit package at a frequency of 60 GHz. Due to the nonlinear behavior of active devices, we observed a gain quenching leading to a complete inhibition of the receiver that occurs together with a current overconsumption. Disruptions are experimentally studied depending on the position above the package, the distance between the EMI source and the circuit, as well as the frequency used to switch on and off the millimeter source.

Published
2017

25. EMI functional vulnerability identification in RF Front-ends

Author

Jeremy Raoult, Robin Marijon, Alexandre Martorell, Laurent Chusseau, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), THALES COMMUNICATIONS & SECURITY, and THALES

Subjects
Engineering, business.industry, Amplifier, RF power amplifier, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, 01 natural sciences, Electromagnetic interference, 010305 fluids & plasmas, [SPI.TRON]Engineering Sciences [physics]/Electronics, Harmonic balance, EMI, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Radio frequency, Transceiver, business, ComputingMilieux_MISCELLANEOUS, Intermodulation
Abstract

The electromagnetic susceptibility of Radio-Frequency (RF) Front-Ends is studied. A RF receiver has nonlinear properties induced by its first stages (Switch, Low-Noise Amplifier and Power Amplifier). Two tones are injected in the RF system, with interference signal power ranging from low to high level. It creates inband intermodulation products (IM), which are partly reflected at the input and become available at the antenna port. We use this signal to identify the most vulnerable nonlinear function in the Front-End. A simulation based on Harmonic Balance is used and will allow design guidelines to improve its robustness.

Published
2017

26. Optimization of Near-Field Image Capture With Millimeter-Wave Bow-Tie Probes

Author

Pierre Payet, Laurent Chusseau, Jeremy Raoult, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Microscope, business.industry, 020206 networking & telecommunications, Near and far field, 02 engineering and technology, 021001 nanoscience & nanotechnology, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Optics, law, Harmonics, Extremely high frequency, 0202 electrical engineering, electronic engineering, information engineering, Harmonic, Millimeter, Spatial frequency, Electrical and Electronic Engineering, 0210 nano-technology, business, Instrumentation, Microwave, ComputingMilieux_MISCELLANEOUS
Abstract

A 60 GHz high-spatial resolution millimeter near-field scanning microwave microscope system is developed. Like in scanning near-field optical microscopy, it involves a modulation of the probe-sample distance. An analytical model of the near-field detection versus the minimum probe-sample distance is derived as a function of the harmonic rank used for lock-in detection. The model is validated owing to various probe sizes and materials. Both the model and experiments exhibit the filtering out of low spatial frequencies, the best efficiency being obtained at highest harmonics. It yields a resolution of $\approx 2\mu \text{m}$ (i.e., $\lambda /2500$ ) with an $18~\mu \text{m}$ gap bow-tie probe and an optimized detection setup operating on the third harmonic.

Published
2017
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27. Room temperature thermopile THz sensor

Author

Laurent Thiery, B. Cretin, Laurent Chusseau, Sofiane Ben Mbarek, Jean-Paul Guillet, Pascal Vairac, Sébastien Euphrasie, Thomas Baron, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and ANR-06-BLAN-0073,TERASCOPE,Continous wave near-field terahertz microscopy(2006)

Subjects
Electromagnetic field, Diffraction, Materials science, Thermocouple, Terahertz radiation, Terahertz, 02 engineering and technology, 01 natural sciences, Thermopile, Noise (electronics), Electrical resistivity and conductivity, 0103 physical sciences, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Sensitivity (control systems), Electrical and Electronic Engineering, Instrumentation, 010302 applied physics, business.industry, Metals and Alloys, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; In this paper, we present the conception, fabrication and characterization of a room temperature thermopile designed to detect electromagnetic fields at 3 THz. The absorber consists of a metallic grid made of one of the material of the thin film thermocouples. The design of the grid is based on a theoretical multilayer model using equivalent resistivity and taking into account small diffraction effects. For future work with sub-wavelength resolution, we have also studied the effect of the reduction of the size of the grids on the equivalent resistivity. The grid is deposited on a 1.5 mm-radius SiO2 circular membrane. The time constant of the sensor is measured with THz and optical sources and it is consistent with finite elements simulations. The sensitivity and the limit of detection are also evaluated. First results at 0.3 THz (and not at the designed frequency of 3 THz, because of limitations in the testing equipment) show a sensitivity of 35 nV/(W/m2) and a limit detection of the E-field of 23 V/m due to a significant amount of noise. Future perspectives are put forward to increase the sensitivity.

Published
2013
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28. A Low-Cost Millimeter-Wave Phase-Contrast Imaging Technique

Author

Laurent Chusseau, Jeremy Raoult, Pierre Payet, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Physics, Image formation, business.industry, Terahertz radiation, Phase-contrast imaging, Process (computing), 01 natural sciences, Sample (graphics), 010309 optics, Interferometry, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Optics, 0103 physical sciences, Extremely high frequency, Commutation, business
Abstract

International audience; In the framework of a near-field remote sensing imaging experiment we developed an interferometric detection scheme at the open end of the rectangular waveguide that serves as probe. To proceed with lock-in detection, the Gunn source is further commutated at kHz frequencies. This results not only in an intensity sensitive image of the sample but also in a phase-contrast image that bring complementary informations. We relate this new image formation process to Gunn non-linearities occurring during the commutation process and plan to use it for near-field phase-sensing characterization at very low-cost.

Published
2016

29. Millimeter Wave Near-Field Imagery With Micrometer Spatial Resolution

Author

Laurent Chusseau, Pierre Payet, Jeremy Raoult, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Microscope, business.industry, 020208 electrical & electronic engineering, 020206 networking & telecommunications, Near and far field, 02 engineering and technology, law.invention, [SPI]Engineering Sciences [physics], Optics, law, Harmonics, Extremely high frequency, 0202 electrical engineering, electronic engineering, information engineering, Near-field scanning optical microscope, Millimeter, Spatial frequency, business, Image resolution
Abstract

International audience; A 60 GHz high spatial resolution millimeter near-field scanning microwave microscope (NFSMM) system is developed with aim of non-destructive testing of material and circuits. Like SNOM, it involves a modulation of the probe-to-sample distance. We derive an analytical model of the probe detection versus the standoff distance and the harmonic order used for lock-in detection. Both the model and experiments exhibit the filtering of the high spatial frequencies with greater efficiency obtained at highest harmonics. When combined with a specially designed bow-tie probe and an optimized detection setup operating on the third harmonic it yields a resolution of ≈ 2 µm (i.e. λ/2500).

Published
2016

30. Electromagnetic coupling circuit model of a magnetic near-field probe to a microstrip line

Author

Rachid Omarouayache, Jeremy Raoult, Pierre Payet, Laurent Chusseau, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, Acoustics, 020208 electrical & electronic engineering, Electromagnetic compatibility, 020206 networking & telecommunications, Near and far field, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Inductive coupling, Microstrip, Electronic circuit simulation, [SPI.TRON]Engineering Sciences [physics]/Electronics, Inductance, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Equivalent circuit, business, ComputingMilieux_MISCELLANEOUS, Electronic circuit
Abstract

Electromagnetic (EM) injection experiments require an accurate and quantitative knowledge of the voltage effectively coupled to a target line or circuit in order to predict disruptive behavior or sensitivity of digital IC circuits to EM threats. To answer this question we derive here a complete quantitative model of the coupling of our magnetic probe to a microstrip line. The novelty of this model is to consider the coupling by analogy with a transformer and then to deduce the corresponding mutual inductance as a function of probe to target relative positions. Its inputs are S-parameter measurements of the actual probe coupled to a 50Ω microstrip line and its output is an electric equivalent circuit that can be implemented in any circuit simulator. Validity of the model extends up to GHz frequencies.

Published
2015

31. Room temperature Si–Ti thermopile THz sensor

Author

Jean-Paul Guillet, Sébastien Euphrasie, Sofiane Ben Mbarek, Thomas Baron, Laurent Thiery, Pascal Vairac, Danick Briand, Laurent Chusseau, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratoire de l'intégration, du matériau au système (IMS), Centre National de la Recherche Scientifique (CNRS)-Institut Polytechnique de Bordeaux-Université Sciences et Technologies - Bordeaux 1, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), and Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OTHER]Engineering Sciences [physics]/Other, Materials science, Silicon, Terahertz radiation, chemistry.chemical_element, 02 engineering and technology, 7. Clean energy, Thermopile, [SPI.MAT]Engineering Sciences [physics]/Materials, Responsivity, chemistry.chemical_compound, Thermocouple, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Noise-equivalent power, ComputingMilieux_MISCELLANEOUS, [SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], business.industry, Electrical engineering, 020206 networking & telecommunications, Johnson–Nyquist noise, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Silicon nitride, Hardware and Architecture, Optoelectronics, 0210 nano-technology, business
Abstract

International audience; In this paper, we present the conception, fabrication and characterization of a thermopile designed to detect terahertz electromagnetic fields at room temperature. The thermopile is made of four doped silicon/titanium thermocouples. The absorber consists of a metallic grid made of titanium, deposited at the same time as the metal part of the thermocouples. The design of the grid is based on a theoretical multilayer model using equivalent resistivity and taking into account small diffraction effects. The grid is deposited on a 2.4 mm × 2.4 mm silicon nitride square membrane. The time constant of the sensor is measured at 0.3 THz to be 10 ms, which is consistent with finite elements simulations. The responsivity is evaluated at 4.8 μV/(W m−2). Due to a large impedance, which leads to a large Johnson noise, the noise equivalent power is 1.5 × 10−6 W Hz−1/2.

Published
2015
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32. 60 GHz Active Microscopy With A Bow-Tie Antenna As Near-Field Probe

Author

Laurent Chusseau, Jeremy Raoult, Rachid Omarouayache, Sylvie Jarrix, Pierre Payet, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
business.industry, Laser cutting, chemistry.chemical_element, Near and far field, Tungsten, Optics, chemistry, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Microscopy, Femtosecond, Medicine, Antenna (radio), business, Reflectometry, Image resolution, ComputingMilieux_MISCELLANEOUS
Abstract

A near-field reflectometry experiment operating at 60 GHz is built in view of material and circuit inspection. The linearly-polarized electric-field probe is a bow-tie antenna obtained from femtosecond laser cutting of pieces in a tungsten metal sheet subsequently attached to an open rectangular waveguide. First images reveal a true near-field detection with strongly subwavelength resolution up to λ/130 at a 5 µm probe-sample distance. Images of various metal objects evaporated on Si substrate also show near-field intensities that are quantitatively related to the conductivity of the different metals.

Published
2015

33. Millimeter-wave near-field imaging with bow-tie antennas

Author

Jeremy Raoult, Rachid Omarouayache, Pierre Payet, Laurent Chusseau, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, business.industry, Bow tie, Dielectric, Atomic and Molecular Physics, and Optics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Dipole, Optics, Electric field, Extremely high frequency, Near-field scanning optical microscope, Reflectometry, business, Microwave, ComputingMilieux_MISCELLANEOUS
Abstract

A near-field reflectometry experiment operating at 60 GHz is built in view of material and circuit inspection. Experiments are always obtained in constant height mode of operation. The bow-tie near-field probe acts mostly as a linearly-polarized electric dipole and allows strongly subwavelength resolution of ≈ λ/130. Its interaction with sample is shown polarization dependent and sensitive to both the local topography and the local dielectric constant or metal conductivity. Resonant and non-resonant probes are both evaluated.

Published
2015
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34. THz fractal antennas for electrical and optical semiconductor emitters and receptors

Author

Alain Giani, Lionel Duvillaret, Laurent Chusseau, Cédric Gaubert, D. Gasquet, Wojciech Knap, F. Aquistapace, Frédéric Garet, Jean-Louis Coutaz, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), and Groupe d'étude des semiconducteurs (GES)

Subjects
Resistive touchscreen, Materials science, Fabrication, business.industry, Terahertz radiation, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, Fractal antenna, [SPI.TRON]Engineering Sciences [physics]/Electronics, Sierpinski triangle, 010309 optics, Optics, Semiconductor, Fractal, 0103 physical sciences, 0210 nano-technology, business
Abstract

THz waves have recently attracted considerable interest mainly because of their various applications. Efficient and compact CW sources are currently under development. Their optimization requires the most efficient coupling of THz radiation from the intrinsic inner semiconductor source to the outside world. In terms of compactness and planarity, this is best achieved using antennas that are fabricated using common processes in semiconductor technology. Although most antennas are narrow band devices, wide bands are expected from fractal 2D geometries like the Sierpinski gasket. Original results are presented on the design, fabrication and THz transmission of 2D metallic fractal deposited on highly resistive GaAs substrate as well as on thin SiNx membranes. Experimental transmission measurements are compared to theory. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Published
2004
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35. Carnot cycle for an oscillator

Author

Fabrice Philippe, Laurent Chusseau, Jacques Arnaud, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Arithmétique informatique (ARITH), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Work (thermodynamics), FOS: Physical sciences, General Physics and Astronomy, Thermodynamics, 01 natural sciences, [PHYS.PHYS.PHYS-ED-PH]Physics [physics]/Physics [physics]/Physics Education [physics.ed-ph], 010305 fluids & plasmas, symbols.namesake, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], Physics Education (physics.ed-ph), Physics - Chemical Physics, 0103 physical sciences, [PHYS.COND.CM-SM]Physics [physics]/Condensed Matter [cond-mat]/Statistical Mechanics [cond-mat.stat-mech], 010306 general physics, Quantum, Absolute zero, Condensed Matter - Statistical Mechanics, Chemical Physics (physics.chem-ph), Physics, Quantum Physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Statistical Mechanics (cond-mat.stat-mech), Physics - Physics Education, Lower temperature, [SPI.TRON]Engineering Sciences [physics]/Electronics, symbols, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], Quantum Physics (quant-ph), Carnot cycle, Physics - Optics, Optics (physics.optics)
Abstract

Carnot established in 1824 that the efficiency of cyclic engines operating between a hot bath at absolute temperature $T_{hot}$ and a bath at a lower temperature $T_{cold}$ cannot exceed $1-T_{cold}/T_{hot}$. We show that linear oscillators alternately in contact with hot and cold baths obey this principle in the quantum as well as in the classical regime. The expression of the work performed is derived from a simple prescription. Reversible and non-reversible cycles are illustrated. The paper begins with historical considerations and is essentially self-contained., Comment: 19 pages, 3 figures, sumitted to European Journal of Physics Changed content: Fluctuations are considered

Published
2002
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36. Coupled-cavity vertical-emitting semiconductor laser for continuous-wave terahertz emission

Author

Laurent Chusseau, Guilhem Almuneau, A.-R. Huntington, Larry A. Coldren, D. Gasquet, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)

Subjects
Materials science, Computer Networks and Communications, Terahertz radiation, MICROCAVITY, Physics::Optics, 02 engineering and technology, DIODE, 01 natural sciences, Electromagnetic radiation, law.invention, Vertical-cavity surface-emitting laser, Photomixing, Optics, law, 0103 physical sciences, Electrical and Electronic Engineering, 010306 general physics, Diode, business.industry, Far-infrared laser, 021001 nanoscience & nanotechnology, Laser, Atomic and Molecular Physics, and Optics, [SPI.TRON]Engineering Sciences [physics]/Electronics, Physics::Accelerator Physics, Optoelectronics, Continuous wave, 0210 nano-technology, business, GENERATION
Abstract

International audience; A coupled-cavity vertical-emitting semiconductor laser is built. It intrinsically allows the beating of two longitudinal modes owing to a weak coupling between the matched optical cavities. Terahertz electromagnetic waves have to be produced by external photomixing. First, analytical analysis enables design rules to be applied for such a purpose. Secondly, the fabrication and characterisation of a coupled-cavity VCSEL operating at 980 nm is described. The fabricated device shows a low laser threshold and exhibits the coupling between both cavities, although continuous-wave terahertz two-mode beating has not yet been observed

Published
2002
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37. Small-Signal Characterization of FET/HEMT for Terahertz Applications

Author

Luca Varani, Viktoras Gružinskis, Christophe Palermo, Jérémi Torres, E. Starikov, Laurent Chusseau, Hugues Marinchio, Philippe Nouvel, Pavel Shiktorov, P. Ziade, Semiconductor Physics Institute (Vilnius), Vilnius University [Vilnius], Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Radiations et composants (RADIAC)

Subjects
010302 applied physics, Materials science, business.industry, Terahertz radiation, General Physics and Astronomy, High-electron-mobility transistor, 01 natural sciences, Signal, [SPI.TRON]Engineering Sciences [physics]/Electronics, Characterization (materials science), 0103 physical sciences, Optoelectronics, 010306 general physics, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2011
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38. Electromagnetic analysis, deciphering and reverse engineering of integrated circuits (E-MATA HARI)

Author

B. Vrignon, Karim Tobich, Rachid Omarouayache, Jeremy Raoult, Laurent Chusseau, Alexandre Bover, John Shepherd, Thanh-Ha Le, Philippe Maurine, Maël Berthier, Bruno Robisson, Lionel Rivière, Anne-Lise Ribotta, Sylvie Jarrix, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Conception et Test de Systèmes MICroélectroniques (SysMIC), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Freescale Semiconductors, Toulouse, Freescale Semiconductors, ENSEEIHT, Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-ENSEEIHT, Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées, MORPHO (SAFRAN), Équipe de Recherche Commune CEA - EMSE (SESAM : Secured Embedded Systems And Microelectronics) (ERC CEA / EMSE), École des Mines de Saint-Étienne (Mines Saint-Étienne MSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-CMP-GC, Centre Microélectronique de Provence - Site Georges Charpak (CMP-GC) (CMP-ENSMSE), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université de Toulouse (UT)-Université de Toulouse (UT)

Subjects
Reverse engineering, Engineering, business.industry, Integrated circuit, Hardware_PERFORMANCEANDRELIABILITY, Fault (power engineering), computer.software_genre, Signal, law.invention, Fault propagation, law, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, computer
Abstract

International audience; Electromagnetic fault injections are produced on secured ICs aiming to break crypto codes. We describe in this paper the whole chain of optimization necessary to achieve this goal, namely 1/ physical optimization of near-field probe and setup, 2/ signal management in timing, shape, and localization to induce the fault while beating countermeasures and 3/ understanding of fault propagation in logic to eventually protect future ICs.

Published
2014
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39. Monte Carlo markovian modeling of modal competition in dual-wavelength semiconductor lasers

Author

Alain Jean-Marie, Laurent Chusseau, Fabrice Philippe, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Arithmétique informatique (ARITH), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Département de Mathématiques et Informatique Appliquées (MIAP), Université Paul-Valéry - Montpellier 3 (UPVM), Systèmes complexes, automates et pavages (ESCAPE), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Models for the performance analysis and the control of networks (MAESTRO), Inria Sophia Antipolis - Méditerranée (CRISAM), Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), and ANR-12-MONU-0019,MARMOTE,Outils et environnements de modélisation markovienne(2012)

Subjects
Physics, Dual-mode laser, Condensed matter physics, Quantum-Dot laser, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Quantum-Well laser, law.invention, Semiconductor laser theory, 010309 optics, Quantum dot laser, law, 0103 physical sciences, Semiconductor optical gain, Quantum well laser, Laser power scaling, Quantum-optical spectroscopy, Atomic physics, [PHYS.COND.CM-SM]Physics [physics]/Condensed Matter [cond-mat]/Statistical Mechanics [cond-mat.stat-mech], 0210 nano-technology, Mode competition, Tunable laser, Quantum well
Abstract

International audience; Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot(QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy inthe course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsiclaser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristicsare varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time inQD, transfer of excitation between QD via the wetting layer. . . As a major result, a possible steady-sate dual-mode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave orterahertz-beating source whereas it does not occur for QW lasers.

Published
2014
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40. Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP

Author

Nicolas Bertru, Frédéric Genty, Joel Jacquet, Guilhem Almuneau, Didier Cot, Pierre Grech, Laurent Chusseau, Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES), Institut Européen des membranes (IEM), and Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)

Subjects
010302 applied physics, Diffraction, Materials science, Fabrication, Scanning electron microscope, business.industry, Bragg's law, Reflector (antenna), Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Distributed Bragg reflector, 01 natural sciences, Inorganic Chemistry, Optics, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Materials Chemistry, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy
Abstract

The molecular beam epitaxy growth of A1AsSb/A10.04Ga0.96AsSb distributed Bragg reflectors lattice-matched to InP is studied. The fabrication and characterization of two such reflectors are reported. Fine structural and optical properties of these samples are investigated using double crystal X-ray diffraction, scanning electron microscopy and reflectivity measurements. Main device performances are a 260 nm wide stop-band centred at 1.55 μm with a maximum reflectivity of 90% for the first 8.5 pairs Bragg reflector while the second 15.5 pairs reflector have allowed an improved maximum reflectivity exceeding 96% at 1.6 μm with a stop-band of 220 nm. As a major result, a new type of surface defects is observed on the A1GaAsSb/A1AsSb Bragg reflector surface. Planar and cross-sectional microscopic observation has revealed that defects are initiated from the reflector-substrate interface. The formation of these defects are discussed and it has been related to InAs islands that appear during the in situ InP-substrate oxide desorption procedure.

Published
1998
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41. Mode Competition in Dual-Mode Quantum Dots Semiconductor Microlaser

Author

Laurent Chusseau, Pierre Viktorovitch, Fabrice Philippe, Xavier Letartre, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Systèmes complexes, automates et pavages (ESCAPE), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), and Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)

Subjects
FOS: Physical sciences, Physics::Optics, Mode stability, 02 engineering and technology, 01 natural sciences, Semiconductor laser theory, 010309 optics, Competition (economics), Quantum-dots, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], 0103 physical sciences, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Physics, Semiconductor lasers, Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, 42.55.Px, 42.60.Lh, 85.35.Be, Mode (statistics), Dual mode, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Dual-mode lasers, Atomic and Molecular Physics, and Optics, Semiconductor, Quantum dot, Optoelectronics, 0210 nano-technology, business, Quantum Physics (quant-ph), Optics (physics.optics), Physics - Optics
Abstract

This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium of quantum well or bulk type inevitably leads to bistable behavior. The choice of a quantum dots gain medium perfectly matched the production of dual-mode lasers devoted to THz generation by photomixing., First draft of a paper submitted to Phys Rev A. This version includes an extended discussion about dual-mode lasers and recall some known results about stability. Extended bibliography

Published
2013
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42. Dual-wavelength laser for THz generation by photo-mixing

Author

Pedro Rojo-Romeo, Jean-Louis Leclercq, Pierre Viktorovitch, Laurent Chusseau, Philippe Regreny, Filippo Disanto, Christian Seassal, Xavier Letartre, E. Augendre, Fabrice Philippe, Koku Kusiaku, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Arithmétique informatique (ARITH), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Míguez, Hernán R., Romanov, Sergei G., Andreani, Lucio C., and Seassal, Christian

Subjects
Materials science, Photoluminescence, Terahertz radiation, Monte Carlo method, Physics::Optics, Dual-wavelength laser, Micro-cavity, Nanophotonics and photonic crystal, THz generation, Wavelength conversion devices, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, Resonator, Optics, law, 0103 physical sciences, Spontaneous emission, Photonic crystal, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, 021001 nanoscience & nanotechnology, Laser, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Optoelectronics, 0210 nano-technology, business, Fabry–Pérot interferometer
Abstract

International audience; We present the design and the fabrication of a dual-wavelength micro-photonic resonator combining a photonic crystal membrane (PCM) and a vertical Fabry Perot (FP) cavity where the former is embedded in the latter. A strong optical coupling between a PCM Γ-point Bloch mode and a FP mode at the same frequency can be used to provide a dual-wavelength device with a frequency difference which is analysed in terms of modes overlapping. We propose and demonstrate a process flow that can be used to provide such a device. Optical reflectivity characterisation is presented for a monolithic device and photoluminescence dual-wavelength spontaneous emission is demonstrated in an extended vertical cavity. Finally the dual-mode laser emission stability is examined with numerical Monte Carlo simulation.

Published
2012
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43. Coupling and propagation of Sommerfeld waves at 100 and 300 GHz

Author

Jean-Paul Guillet, Laurent Chusseau, Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and ANR-06-BLAN-0073,TERASCOPE,Continous wave near-field terahertz microscopy(2006)

Subjects
Materials science, Field (physics), Terahertz radiation, Physics::Instrumentation and Detectors, chemistry.chemical_element, 02 engineering and technology, Tungsten, 01 natural sciences, 010309 optics, terahertz, plasmon, Optics, 0103 physical sciences, Classical electromagnetism, Electrical and Electronic Engineering, Instrumentation, goubau, Coupling, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Radiation, business.industry, Surface plasmon, Radius, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, sommerfeld, 0210 nano-technology, business, Gaussian beam, millimetrique
Abstract

International audience; The coupling between a linearly-polarized gaussian beam and a Sommerfeld wave propagating on a circular metallic wire is obtained owing to a differential phase element inserted in front of the metal wire. At millimeter-wavelengths we calculate a theoretical maximum coupling efficiency of 32% for this system in spite of the metal nature and radius in the range of a few hundreds of microns. A detailed experimental study of 100 and 300 GHz Sommerfeld waves propagating on stainless steel and tungsten wires is reported. The measured field at any distance from the wire compares well with theoretical predictions.

Published
2012
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44. Continuous-wave scanning terahertz near-field microscope

Author

Annick Penarier, Thierry Grosjean, Jean-Paul Guillet, Daniel Charraut, R. Adam, Laurent Chusseau, Fadi Issam Baida, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), and ANR-06-BLAN-0073,TERASCOPE,Continous wave near-field terahertz microscopy(2006)

Subjects
Terahertz and submillimeter equipment, Microscope, Materials science, Terahertz radiation, Near and far field, 02 engineering and technology, near-filed imaging probe, 01 natural sciences, law.invention, 010309 optics, Optics, law, 0103 physical sciences, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Electrical and Electronic Engineering, Reflectometry, near-field scanning microscopy, business.industry, Detector, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Differential phase, Electronic, Optical and Magnetic Materials, Sommerfeld waves, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Continuous wave, 0210 nano-technology, business, Decoupling (electronics)
Abstract

International audience; A versatile cw measurement setup for terahertz near-field reflectometry is proposed. Propagation, coupling, and focusing of wire guided modes are used to achieve a λ/33 resolution while imaging a metal corner deposited on glass. The setup is source and detector independent owing to wave coupling and decoupling with differential phase plates.

Published
2011
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45. Investigations of room temperature bolometers for THz applications

Author

S. Ben Mbarek, B. Cretin, Sébastien Euphrasie, Laurent Thiery, Annick Penarier, Pascal Vairac, Jean-Paul Guillet, R. Adam, Thomas Baron, Laurent Chusseau, and Danick Briand

Subjects
Absorption (acoustics), Materials science, Fabrication, business.industry, law, Terahertz radiation, Bolometer, Optoelectronics, Noise level, business, Temperature measurement, Sensitivity (electronics), law.invention
Abstract

Abstruct- We investigate in this work the perlbrmance of two conligurations of room temperature bolometers dedicated to THz applications. Fabrication processes, noise level, sensitivity and resolution characterizations ùre presented. Results emphasize the cllicicncy of the proposed approach.

Published
2010
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46. Hydrodynamic study of electronic, optical and thermal excitation of plasma waves in HEMTs

Author

G. Sabatini, Jérémi Torres, Annick Penarier, Stéphane Blin, Christophe Palermo, E. Starikov, T. Laurent, V. Gruzzinskis, Philippe Nouvel, Hugues Marinchio, P. Ziadee, Pavel Shiktorov, Luca Varani, Laurent Chusseau, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université Libanaise, Coris BioConcept, Semiconductor Physics Institute (Vilnius), Vilnius University [Vilnius], and Radiations et composants (RADIAC)

Subjects
Physics, Waves in plasmas, Biasing, 02 engineering and technology, Plasma, proceedings, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Noise (electronics), Background noise, Nuclear magnetic resonance, Harmonics, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Harmonic, Atomic physics, 010306 general physics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Excitation
Abstract

By means of a numerical hydrodynamic model, we investigate the influence of collective plasma modes in a field-effect transistor channel under different excitation and biasing conditions. Firstly, we study the case of a device externally-excited by a harmonic optical beating or an electronic excitation and current-driven operation at the drain. The harmonic and continuous responses of the drain-source bias show sharp resonances related to the first odd plasma modes, whose frequencies and amplitudes can be modified by playing on the drain bias. Secondly, we calculate the spectral density of drain voltage fluctuations in the absence of external excitations by using the generalized impedance-field method. Also the noise spectrum exhibits peaks corresponding to the excitation by the background noise of odd plasma modes.

Published
2010
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47. Terahertz near-field imaging using a Y splitter and Sommerfeld wire waves on bare metal rods

Author

Jean-Paul Guillet, Annick Penarier, T. Laurent, Daniel Charraut, Laurent Chusseau, R. Adam, Thierry Grosjean, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), and Térahertz, hyperfréquence et optique (TéHO)

Subjects
Materials science, Terahertz radiation, business.industry, Resolution (electron density), terahertz wave imaging, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Near field imaging, Rod, Differential phase, 010309 optics, rods, Optics, Splitter, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Bare metal, terahertz waves, stainless steel, 0210 nano-technology, business, optical beam splitters, Image resolution, image resolution
Abstract

International audience; We describe a near-field experiment using a Y splitter supporting cw THz Sommerfeld wire modes coupled and de-coupled with differential phase plates. Owing to a taper up to similar to 50 mu m of one of the Y ends, a near-field imaging resolution of similar to 90 mu m is demonstrated in agreement with calculations.

Published
2010
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48. Frequency stabilization of photo-mixing generated signal using a single michelson interferometer

Author

Luca Varani, Jérémi Torres, T. Laurent, S. Ginestar, Christophe Palermo, Stéphane Blin, Laurent Chusseau, Philippe Nouvel, Coris BioConcept, Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Nantes (UN)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Nantes Université (NU)-Université de Rennes 1 (UR1), and Chusseau, Laurent

Subjects
Physics, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, business.industry, Terahertz radiation, Physics::Optics, Michelson interferometer, proceedings, Laser, 01 natural sciences, Signal, law.invention, Photodiode, 010309 optics, Interferometry, Optics, law, Fiber laser, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Continuous wave, 010306 general physics, business, ComputingMilieux_MISCELLANEOUS
Abstract

We investigate the possibility to use a single interferometer, instead of two, to stabilize the frequency of a THz radiation generated by optical beating between two continuous-wave lasers.

Published
2010
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49. Measurements of THz emission from nanometric-size transistors

Author

Stéphane Blin, V. Gruzhinskis, Jérémi Torres, Pavel Shiktorov, Laurent Chusseau, T. Laurent, Hugues Marinchio, Dominique Coquillat, Luca Varani, Frederic Teppe, Christophe Palermo, E. Starikov, Philippe Nouvel, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Groupe d'étude des semiconducteurs (GES), and Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)

Subjects
Materials science, Terahertz radiation, 02 engineering and technology, 01 natural sciences, law.invention, law, Frequency measurement, 0103 physical sciences, 010306 general physics, High electron, Resonant frequency, HEMTs, business.industry, Transistor, MODFETs, Logic gates, Plasma, 021001 nanoscience & nanotechnology, [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph], Plasmas, Logic gate, Optoelectronics, Optical variables measurement, 0210 nano-technology, business, Excitation
Abstract

Measurements of terahertz resonant emission due to the excitation of plasma waves by an optical beating inside AlGaAs/InGaAs/InP high electron mobility transistors are reported at 300 K and 200 K.

Published
2010
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50. Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor

Author

G. Sabatini, Laurent Chusseau, Jeremie Torres, Hugues Marinchio, Viktoras Gružinskis, Philippe Nouvel, Pavel Shiktorov, Luca Varani, Christophe Palermo, E. Starikov, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Semiconductor Physics Institute (Vilnius), and Vilnius University [Vilnius]

Subjects
010302 applied physics, Physics, Electron mobility, Physics and Astronomy (miscellaneous), Terahertz radiation, business.industry, Local oscillator, Transistor, Physics::Optics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, law.invention, Terahertz spectroscopy and technology, [SPI.TRON]Engineering Sciences [physics]/Electronics, law, 0103 physical sciences, Optoelectronics, Nonlinear element, Field-effect transistor, Heterodyne detection, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

A method for the heterodyne detection of terahertz (THz) signals is proposed. A high electron mobility transistor is used as a nonlinear element, while the optical beating of two laser beams exciting plasma waves in the transistor channel plays the role of the THz local oscillator. High efficiency and room-temperature operation of such a mixer are demonstrated by numerical simulations.

Published
2010
Full Text
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