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Implantation of P in B bulk doped Si (hole concentration = 2.1×1020 cm−3) followed by multiple pulse laser annealing with a XeCl laser has produced the incorporation of P in substitutional sites of the matrix and also charge carrier compensation. We report in this paper light scattering studies of these samples, in which a decrease of the hole-induced softening of the Si-Raman line is observed. This softening depends on the type and concentration of free carriers and thus, in our case, on the degree of compensation. This softening is discussed in terms of the interaction of the continuum of free carrier excitations with the Raman phonon. We also report the observation of the vibrations of 11B-31 P pairs.

The annealing behavior of arsenic‐implanted silicon using Nd:YAG laser irradiation was investigated. The annealing process depended upon the scanning speed and the power density. The carrier concentration at the surface was higher by factor of approx. 1.5 to 3 than in the bulk. Multiple irradiation resulted in a profile broadening and a reduced carrier concentration in the bulk. The dependence of the electron mobility upon the electron concentration up to 1.5×1021 cm−3 was measured. The experimental results show that the electron mobility depends only on the electron concentration, and is independent of the conditions of annealing.