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3. Current hysteresis by oxygen vacancy exchange between oxides in Pt/a-IGZO/TaO x /W.

Author

Kwon, Hyeon-Min, Kim, Myeong-Ho, Lee, Seung-Ryul, Kim, Young-Bae, and Choi, Duck-Kyun

Subjects
*HYSTERESIS, *OXYGEN, *CRYSTAL structure, *TANTALUM oxide, *PLATINUM, *ELECTRIC resistance
Abstract

Highlights: [•] We investigated current hysteresis mechanism in Pt/a-IGZO/TaO x /W structure that shows rectifying characteristics. [•] In order to understand the role of each layer and the origin of memory effect, we designed and performed two model experiments on the basis of preliminary experimental results and analysis. [•] Current hysteresis (memory effect) is attributed to the bias dependent resistance change in TaO x layer due to positively charged oxygen vacancy exchange between two oxides. [ABSTRACT FROM AUTHOR]

Published
2014
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