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Current hysteresis by oxygen vacancy exchange between oxides in Pt/a-IGZO/TaO x /W.
- Source :
-
Applied Surface Science . Feb2014, Vol. 293, p220-224. 5p. - Publication Year :
- 2014
-
Abstract
- Highlights: [•] We investigated current hysteresis mechanism in Pt/a-IGZO/TaO x /W structure that shows rectifying characteristics. [•] In order to understand the role of each layer and the origin of memory effect, we designed and performed two model experiments on the basis of preliminary experimental results and analysis. [•] Current hysteresis (memory effect) is attributed to the bias dependent resistance change in TaO x layer due to positively charged oxygen vacancy exchange between two oxides. [ABSTRACT FROM AUTHOR]
- Subjects :
- *HYSTERESIS
*OXYGEN
*CRYSTAL structure
*TANTALUM oxide
*PLATINUM
*ELECTRIC resistance
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 293
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 94153327
- Full Text :
- https://doi.org/10.1016/j.apsusc.2013.12.138