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We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (−40~125°C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after solder reflow (260°C, 90 second) and during external magnetic disturbance (550-Oe under writing). It is built on 28-nm FDSOI technology in modular format for IP reuse and has great potential to serve wide variety of applications such as IoT, and high performance MCU.

We have demonstrated fully integrated 64-kb magnetoresistive random access memory (MRAM) using 0.24-/spl mu/m CMOS technology and discussed some key issues in process integration. Optimal tunneling magnetoresistive (TMR) properties of MRAM bits (37% of TMR ratio and 5-10 k/spl Omega//spl middot//spl mu/m/sup 2/ of RA) were obtained mainly by the control of bottom electrode roughness, and electrical shorting was avoided by some commercialized wet solutions. In viewpoint of process integration, excellent TMR properties of magnetic tunnel junction (MTJ) fresh films and prevention of their degradation in post patterning process are two crucial factors, and especially, electrical shorting requires some careful control.