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Two-dimensional metals offer intriguing possibilities to explore metallicity and other related properties in systems with reduced dimensionality. Here, following recent experimental reports of synthesis of two-dimensional metallic gallium (gallenene) on insulating substrates, we conduct a computational search of gallenene structures using the Particle Swarm Optimization algorithm, and identify stable low energy structures. Our calculations of the critical temperature for conventional superconductivity yield values $\sim 7$ K for gallenene. We also emulate the presence of the substrate by introducing the external confining potential and test its effect on the structures with unstable phonons.

Graphite, with many industrial applications, is one of the widely sought-after allotropes of carbon. The sp2 hybridized and thermodynamically stable form of carbon forms a layered structure with strong in-plane carbon bonds and weak inter-layer van der Waals bonding. Graphite is also a high-temperature ceramic, and shaping them into complex geometries is challenging, given its limited sintering behavior even at high temperatures. Although the geometric design of the graphite structure in many of the applications could dictate its precision performance, conventional synthesis methods for formulating complex geometric graphite shapes are limited due to the intrinsic brittleness and difficulties of high-temperature processing. Here, we report the development of colloidal graphite ink from commercial graphite powders with reproducible rheological behavior that allows the fabrication of any complex architectures with tunable geometry and directionality via 3D printing at room temperature. The method is enabled via using small amounts of clay, another layered material, as an additive, allowing the proper design of the graphene ink and subsequent binding of graphite platelets during printing. Sheared layers of clay are easily able to flow, adapt, and interface with graphite layers forming strong binding between the layers and between particles that make the larger structures. The direct ink printing of complex 3D architectures of graphite without further heat treatments could lead to easy shape engineering and related applications of graphite at various length scales, including complex graphite molds or crucibles. The 3D printed complex graphitic structures exhibit excellent thermal, electrical, and mechanical properties, and the clay additive does not seem to alter these properties due to the excellent inter-layer dispersion and mixing within the graphite material., Comment: 19 pages, 4 figures

Excitonic condensate has been long-sought within bulk indirect-gap semiconductors, quantum wells, and 2D material layers, all tried as carrying media. Here we propose intrinsically stable 2D semiconductor heterostructures with doubly-indirect overlapping bands as optimal platforms for excitonic condensation. After screening hundreds of 2D materials, we identify candidates where spontaneous excitonic condensation mediated by purely electronic interaction should occur, and hetero-pairs Sb2Te2Se/BiTeCl, Hf2N2I2/Zr2N2Cl2, and LiAlTe2/BiTeI emerge promising. Unlike monolayers, where excitonic condensation is hampered by Peierls instability, or other bilayers, where doping by applied voltage is required, rendering them essentially non-equilibrium systems, the chemically-specific heterostructures predicted here are lattice-matched, show no detrimental electronic instability, and display broken type-III gap, thus offering optimal carrier density without any gate voltages, in true-equilibrium. Predicted materials can be used to access different parts of electron-hole phase diagram, including BEC-BCS crossover, enabling tantalizing applications in superfluid transport, Josephson-like tunneling, and dissipationless charge counterflow., Comment: 4 figure

Despite being only a few atoms thick, single-layer two-dimensional (2D) materials display strong electron-photon interactions that could be utilized in efficient light modulators on extreme subwavelength scales. In various applications involving light modulation and manipulation, materials with strong optical response at different wavelengths are required. Using qualitative analytical modeling and first-principles calculations, we determine the theoretical limit of the maximum optical response such as absorbance (A) and reflectance (R) in 2D materials and also conduct a computational survey to seek out those with best A and R in various frequency ranges, from mid-infrared (IR) to deep ultraviolet (UV). We find that 2D boron has broadband reflectance R >99% for >100 layers, surpassing conventional thin films of bulk metals such as silver. Moreover, we identify 2D monolayer semiconductors with maximum response, for which we obtain quantitative estimates by calculating quasiparticle energies and accounting for excitonic effects by solving the Bethe-Salpeter equation (BSE). We found several monolayer semiconductors with absorbances >30% in different optical ranges which are more than half of the maximum possible value for a 2D material. Our study predicts 2D materials which can potentially be used in ultra-thin reflectors and absorbers for optoelectronic application in various frequency ranges., Comment: 18 pages, 6 figures

Alloying/doping in two-dimensional material has been important due to wide range band gap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the band gap and also reduced the growth temperature. Here, we report synthesis of quaternary alloys MoxW1-xS2ySe2(1-y) using chemical vapour deposition. The composition of alloys has been tuned by changing the growth temperatures. As a result, we can tune the bandgap which varies from 1.73 eV to 1.84 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.

Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction under the equilibrium condition, based on the input from first-principle calculations. Our calculation also suggests that, at the same forward bias, the current density of a stack of 2D graphene-phosphorene Schottky diodes may be ten thousand times higher than that of a traditional 3D Schottky diode and offer less energy dissipation.

Two-dimensional (2D) superconductors have attracted great attention in recent years due to the possibility of new phenomena in lower dimensions. With many bulk transition metal carbides being well-known conventional superconductors, here we perform first-principles calculations to evaluate the possible superconductivity in a 2D monolayer Mo$_2$C. Three candidate structures (monolayer alpha-Mo$_2$C, 1T MXene-Mo$_2$C, and 2H MXene-Mo$_2$C) are considered and the most stable form is found to be the 2H MXene-Mo$_2$C. Electronic structure calculations indicate that both unpassivated and passivated 2H forms exhibit metallic properties. We obtain the phonon frequencies and electron-phonon couplings using density-functional perturbation theory, and based on the BCS theory and McMillan equation, estimate the critical temperatures to be in the ~0-13 K range, depending on the species of the surface termination (O, H and OH). The most interesting termination group is H, which can increase the electron-phonon coupling and bring the critical temperature to 13 K. This shows a rather high critical temperature, tunable by surface termination, making this 2D carbide an interesting test bed for low-dimensional superconductivity.

Monolayer transition metal dichalcogenides are promising materials for photoelectronic devices. Among them, molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$) are some of the best candidates due to their favorable band gap values and band edge alignments. Here we consider various perturbative corrections to the DFT electronic structure, e.g. GW, spin-orbit coupling, as well as many-body excitonic and trionic effects, and calculate accurate band gaps as a function of homogeneous strain in these materials. We show that all of these corrections are of comparable magnitudes and need to be included in order to obtain an accurate electronic structure. We calculate the strain at which the direct-to-indirect gap transition occurs. After considering all contributions, the direct to indirect gap transition strain is found to be at 2.7% in MoS$_2$ and 3.9% in WS$_2$. These values are generally higher than the previously reported theoretical values., Comment: 9 pages, 4 figures, 1 table