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Your search keyword '"Kusai, Haruka"' showing total 22 results
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22 results on '"Kusai, Haruka"'

1. A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites

Author

Shiraishi, Masashi, Kusai, Haruka, Nouchi, Ryo, Nozaki, Takayuki, Shinjo, Teruya, Suzuki, Yoshishige, Yoshida, Makoto, and Takigawa, Masashi

Subjects
Condensed Matter - Materials Science
Abstract

We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Co nano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%. The 59Co NMR spin echo experiment enabled clarification of the hyperfine field of Co at the interface between the ferromagnet and the molecules, which has not been investigated for molecular spintronics. An enhanced hyperfine field of the Co was observed in the rubrene-Co nano-composites, which may be related to the enhancement of the MR ratio. This study demonstrates the importance of microscopic investigation of the interface between molecules and ferromagnets that governs spin-dependent transport in molecular spin devices., Comment: 12pages, 3 figures, 1 table

Published
2008
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2. Mechanism of HfO2-FeFET Memory Operation Revealed by Quantitative Analysis of Spontaneous Polarization and Trap Charge

Author

Ichihara, Reika, primary, Higashi, Yusuke, additional, Suzuki, Kunifumi, additional, Kusai, Haruka, additional, Yoshimura, Yoko, additional, Hamai, Takamasa, additional, Kamiya, Yuta, additional, Takahashi, Kota, additional, Matsuo, Kazuhiro, additional, Nakasaki, Yasushi, additional, Miyagawa, Hidenori, additional, Suzuki, Masamichi, additional, Sakuma, Kiwamu, additional, Kamimuta, Yuuichi, additional, and Saitoh, Masumi, additional

Published
2022
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4. Metal-Assisted Solid Phase Crystallization of Vertical Si Channel in 3D Flash Memory

Author

Miyagawa, Hidenori, primary, Kusai, Haruka, additional, Takaishi, Riichiro, additional, Kawai, Tomoya, additional, Kamimuta, Yuuichi, additional, Murakami, Toshiya, additional, Ariyoshi, Keiko, additional, Asano, Takanori, additional, Goto, Masakazu, additional, Fujiwara, Makoto, additional, Mitani, Yuichiro, additional, Obu, Tomoyuki, additional, and Aochi, Hideaki, additional

Published
2020
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5. Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation

Author

Ichihara, Reika, primary, Suzuki, Kunifumi, additional, Kusai, Haruka, additional, Ariyoshi, Keiko, additional, Akari, Keisuke, additional, Takano, Keisuke, additional, Kamiya, Kazuhiro Matsuo Yuta, additional, Takahashi, Kota, additional, Miyagawa, Hidenori, additional, Kamimuta, Yuuichi, additional, Sakuma, Kiwamu, additional, and Saitoh, Masumi, additional

Published
2020
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8. Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory

Author

Miyagawa, Hidenori, primary, Fujiwara, Makoto, additional, Mitani, Yuichiro, additional, Obu, Tomoyuki, additional, Aochi, Hideaki, additional, Kusai, Haruka, additional, Takaishi, Riichiro, additional, Kawai, Tomoya, additional, Kamimuta, Yuuichi, additional, Murakami, Toshiya, additional, Ariyoshi, Keiko, additional, Asano, Takanori, additional, and Goto, Masakazu, additional

Published
2019
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9. Metallic phase in the metal-intercalated higher fullerene Rb8.8(7)C84

Author

Rikiishi, Yoshie, Kashino, Yoko, Kusai, Haruka, Takabayashi, Yasuhiro, Kuwahara, Eiji, Kubozono, Yoshihiro, Kambe, Takashi, Takenobu, Taishi, Iwasa, Yoshihiro, Mizorogi, Naomi, Nagase, Shigeru, and Okada, Susumu

Abstract

A new material of higher fullerene, RbxC84, was synthesized by intercalating Rb metal into C-84 crystals. The RbxC(84) crystals showed a simple cubic (sc) structure with lattice constant, a, of 16.82 (2) angstrom at 6.5 K, and 16.87 (2) angstrom at 295 K. The Rietveld refinements were achieved with the space group, Pa (3) over bar, based on a model that the C-2 axis of D2d-C84 aligned along [111]. The sample composition was determined to be Rb-8.8(7) C-84. The ESR spectrum at 303 K was composed of a broad peak with peak-to-peak linewidth Delta H-pp of 220 G, and a narrow peak with Delta H-pp of 24 G. Temperature dependence of the broad peak clearly showed a metallic behavior. The metallic behavior was discussed based on a theoretical calculation. This finding of new metallic phase in a higher fullerene is the first step for a development of new types of fullerene materials with novel physical properties such as superconductivity.

Published
2005

19. (Invited) Defect Generation Mechanism and Its Impact on Reliability Properties in MONOS Devices

Author

Fujii, Shosuke, Kusai, Haruka, Sakuma, Kiwamu, and Koyama, Masato

Abstract

The interface-state generation mechanism and its impact on reliability properties, such as endurance and data retention, in MONOS devices have been studied. The charge measurement technique we developed has demonstrated that holes injected during erasing are the main cause of interface-state generation. From carrier separation measurement for MONOS devices, we have found the data retention degradation after P/E stress is owing to the increased hole injection from Si substrate via the generated interface states. We also discuss the physical origin of the interface states in MONOS devices and report on MONOS-specific interface-state generation/recovery phenomena, and their significant impact on endurance and retention properties.

Published
2014

20. Fabrication of field-effect transistor device with higher fullerene, C88.

Author

Nagano, Takayuki, Sugiyama, Hiroyuki, Kuwahara, Eiji, Watanabe, Rie, Kusai, Haruka, Kashino, Yoko, and Kubozono, Yoshihiro

Subjects
FIELD-effect transistors, FULLERENES, TRANSISTORS, THIN films, FULLERENE thin films
Abstract

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5×10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n-channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films. [ABSTRACT FROM AUTHOR]

Published
2005
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21. Charge Trapping and Reliability Properties of MONOS Memory with High-k Blocking Layer

Author

Yasuda, Naoki, Fujii, Shosuke, Fujiki, Jun, and Kusai, Haruka

Abstract

Carrier trapping and reliability characteristics during the cycling operation of metal-oxide-nitride-oxide-semiconductor (MONOS) devices with a high-k blocking layer (Al2O3) have been studied by measuring the injected charge during programming and erasing (P/E). The evaluated charge centroid during P/E indicates that the traps near the SiN/Al2O3 interface are filled at high electric field, while bulk traps in the SiN layer are also available at low electric field. The degradation of MONOS devices in cycling operation is found to be strongly correlated with injected charge during erasing. It is indispensable to suppress hole injection, as well as lowering the electric field to improve endurance of MONOS devices. The discussion of this paper also extends to the structure of the charge trapping layer to improve both cycling endurance and retention simultaneously. Finally, we report that a high-k blocking layer has significant impact on data readout and programming characteristics through its transient dielectric properties.

Published
2011
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22. Fabrication of field-effect transistor device with higher fullerene, C88.

Author

Nagano, Takayuki, Sugiyama, Hiroyuki, Kuwahara, Eiji, Watanabe, Rie, Kusai, Haruka, Kashino, Yoko, and Kubozono, Yoshihiro

Subjects
*FIELD-effect transistors, *FULLERENES, *TRANSISTORS, *THIN films, *FULLERENE thin films
Abstract

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5×10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n-channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films. [ABSTRACT FROM AUTHOR]

Published
2005
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