Fabrication of field-effect transistor device with higher fullerene, C88.

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C₈₈, and n-channel normally on depletion-type FET properties have been found in this FET device. The C₈₈ FET exhibited a high mobility, μ, of 2.5×10^-3 cm² V^-1 s^-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n-channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C₈₈ thin films. [ABSTRACT FROM AUTHOR]