148 results on '"Kuo, J.M."'
Search Results
2. Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance
3. Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law
4. Shallow Si/Pd-based ohmic contacts to n-Al0.5In0.5P
5. A new fabrication technique for silicon nanowires
6. Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors
7. High-performance planar Al 0.48In 0.52As/In 0.53Ga 0.47As high electron mobility transistors
8. Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors
9. Realization of high-speed InP SHBTs using novel but simple techniques for parasitic reduction.
10. GaAsSb-based HBTs grown by production MBE system.
11. Ultra high-speed 0.25-μm emitter InP-InGaAs SHBTs with fmax of 687 GHz.
12. High-performance planar Al0.48In0.52As/In0.53Ga0.47As high electron mobility transistors
13. High power density and power added efficiency of Al0.5In 0.5P/InGaAs doped-channel HFETs.
14. De-hydrogenation studies of carbon-doped In0.53Ga0.47As grown by gas-source MBE and their applications to InP/In0.53Ga0.47As HBTs.
15. High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance
16. Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
17. Ga2O3(Gd2O3)/GaAs power MOSFETs
18. Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
19. Schottky barrier heights of In0.5(AlxGa1−x)0.5P (0≤x≤1) lattice matched to GaAs
20. Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs
21. In0.5(Al0.3Ga0.7)0.5P/In0.2Ga0.8As power HEMT with 65.2% power-added efficiency under 1.2 V operation
22. High performance pseudomorphic power HEMTs
23. Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy
24. Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide
25. Pt/Ti/Pt/Au Schottky contacts on HEMTs
26. Large array of GaAs modulators and detectors flip-chip solder bonded to silicon CMOS using InGaP as the selective etch stop for GaAs substrate removal
27. Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs
28. In-situ pyrometric interferometry monitoring of material systems during gas-source molecular beam epitaxy growth
29. Electron cyclotron resonance plasma etching of InP and related materials in BCl3
30. Interface optimization of multiple quantum wells grown by gas source molecular beam epitaxy
31. Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs
32. A YAC Contig Spanning a Cluster of Human Type III Receptor Protein Tyrosine Kinase Genes (PDGFRA-KIT-KDR) in Chromosome Segment 4q12
33. Novel GaAs heterojunction bipolar transistors using In/sub 0.5/Al/sub 0.5/P as emitter
34. Defect Control in Relaxed, Graded GeSi/Si
35. Gas source molecular beam epitaxial growth and device applications in In0.5Ga0.5P and In0.5Al0.5P heterostructures
36. Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's)
37. Characterization of the zinc binding site of bacterial phosphotriesterase.
38. High temperature, high power InGaAs/GaAs quantum-well lasers with lattice-matched InGaP cladding layers
39. Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit
40. Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis.
41. High temperature operation (185 degrees C) of InGaAs/GaAs/InGaP quantum well lasers.
42. A new pseudomorphic In/sub 0.2/Ga/sub 0.8/As layers HEMT using Al/sub 0.52/In/sub 0.48/P as barrier layer.
43. Integrated AlInAs/InGaAs HEMT/HBT heterostructure grown by MBE.
44. Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs.
45. III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric.
46. Shallow Si/Pd-based ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P.
47. New pseudomorphic MODFETs utilizing Ga0.47-uIn0.53+uAs/Al0.48+uIn0.52-uAs heterostructures.
48. Comparison of delta doped GaAs grown by MBE and GSMBE using different arsenic species
49. High speed 2*4 array of differential quantum well modulators
50. Photocurrent saturation in short-period superlattice modulators
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.