Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs.

Details

Language :

English

ISBNs :

9780750305563

Database :

Complementary Index

Journal :

Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

Publication Type :

Conference

Accession number :

92160739

Full Text :

https://doi.org/10.1109/ISCS.1998.711645