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1. Effects of interstitial oxygen defects at HfO(sub x)N(sub y)/Si interface on electrical characteristics of MOS devices

Author

Chin-Lung Cheng, Chun-Yuan Lu, Kuei-Shu Chaing-Liao, Ching-Hung Huang, Sheng-Hung Wang, and Tien-Ko Wang

Subjects
Electric currents -- Research, Dielectric separation -- Usage, Hafnium -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

A low defect at Si surface was formed by a high-temperature annealing in hydrogen atmosphere. This was used to study the effects of the defects at high-k dielectric/Si interface on the electrical characteristic of metal-oxide semiconductor.

Published
2006

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