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Effects of interstitial oxygen defects at HfO(sub x)N(sub y)/Si interface on electrical characteristics of MOS devices
- Source :
- IEEE Transactions on Electron Devices. Jan, 2006, Vol. 53 Issue 1, p63, 8 p.
- Publication Year :
- 2006
-
Abstract
- A low defect at Si surface was formed by a high-temperature annealing in hydrogen atmosphere. This was used to study the effects of the defects at high-k dielectric/Si interface on the electrical characteristic of metal-oxide semiconductor.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 53
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.144794413