20 results on '"Krisch, K.S."'
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2. Thickness dependence of boron penetration through O2- and N2O-grown gate oxides and its impact on threshold voltage variation
3. Suppression of interface-state generation in reoxidized nitrided oxide gate dielectrics
4. Precursor ion damage and angular dependence of single event gate rupture in thin oxides
5. Gate capacitance attenuation in MOS devices with thin gate dielectrics
6. Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation
7. Substrate injection and crosstalk in CMOS circuits.
8. Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration
9. Ultra-thin gate dielectrics: they break down, but do they fail?
10. Physics-based RF noise modeling of submicron MOSFETs.
11. The impact of nitrogen profile engineering on ultrathin nitrided oxide films for dual-gate CMOS ULSI.
12. Impact of boron diffusion through O/sub 2/ and N/sub 2/O gate dielectrics on the process margin of dual-poly low power CMOS.
13. An optimized 850 degrees C low-pressure-furnace reoxidized nitrided oxide (ROXNOX) process
14. Effect of electronic corrections on the thickness dependence of thin oxide reliability.
15. Ultra-thin gate dielectrics: they break down, but do they fail?
16. Effect of electronic corrections on the thickness dependence of thin oxide reliability
17. Physics-based RF noise modeling of submicron MOSFETs
18. The impact of nitrogen profile engineering on ultrathin nitrided oxide films for dual-gate CMOS ULSI
19. A symmetric 0.25 μm CMOS technology for low-power, high-performance ASIC applications using 248 nm DUV lithography
20. A symmetric 0.25 /spl mu/m CMOS technology for low-power, high-performance ASIC applications using 248 nm DUV lithography.
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