21 results on '"Koji Ashida"'
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2. Feature preserving manifold mesh from an octree.
3. Pedestrians: creating agent behaviors through statistical analysis of observation data.
4. Investigation of Run-to-Run Fluctuation in Growth Conditions of Physical Vapor Transport Growth of 4H-SiC Crystals
5. Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient
6. Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface.
7. SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
8. Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology
9. Low Energy Electron Channeling Contrast Imaging from 4H-SiC Surface by SEM and its Comparison with CDIC-OM and PL Imaging
10. Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
11. Evaluation of Polishing-Induced Subsurface Damage of 4H-SiC (0001) by Cross-Sectional Electron Backscattered Diffraction and Synchrotron X-Ray Micro-Diffraction
12. Tip-Enhanced Raman Scattering of the Local Nanostructure of Epitaxial Graphene Grown on 4H-SiC (0001̅)
13. Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000–1)
14. Quantitative observation of low energy electron channeling contrast from sub-nanometer thick surface layers using hexagonal Silicon Carbide single crystal
15. Evaluation of growth sector orientation changes of high B doped high pressure and high temperature diamond by high resolution electron backscatter diffraction study
16. Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface
17. Crystallographic orientation dependence of SEM contrast revealed by SiC polytypes
18. Feature preserving manifold mesh from an octree
19. Pedestrians: creating agent behaviors through statistical analysis of observation data
20. Crystallographic orientation dependence of SEM contrast revealed by SiC polytypes.
21. 低速電子線チャネリング効果を用いたSiC結晶表面の終端構造評価
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