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Evaluation of growth sector orientation changes of high B doped high pressure and high temperature diamond by high resolution electron backscatter diffraction study
- Source :
- Japanese Journal of Applied Physics. 58:065504
- Publication Year :
- 2019
- Publisher :
- IOP Publishing, 2019.
-
Abstract
- The orientation of growth sectors of highly B doped p+ high pressure and high temperature (HPHT) substrates were investigated by high angular resolution electron backscatter diffraction (HR-EBSD). The lattice rotation mapping images of the areas across the 〈111〉 growth sector boundaries were measured. The crystal orientation was found to be inclined approximately 0.03° for [001] to [-1-10], compared with the [-1-11] growth sector area at a given location. Other orientation inclinations were observed such as 0.02° for [001] to [110] and 0.025° for [001] to [1-10]. The same phenomena were confirmed for the other two crystals. Conventionally, it has been recognized that a HPHT-grown crystal is a perfect single crystal, however, our results indicate that "twin boundaries" are formed between the growth sectors for p+ HPHT substrates. To meet the requirements for the power device wafer specifications, the establishment of growth technology is desirable in the near future.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
General Engineering
General Physics and Astronomy
Diamond
High resolution
engineering.material
01 natural sciences
Crystal
High pressure
Lattice (order)
0103 physical sciences
engineering
Wafer
Single crystal
Electron backscatter diffraction
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........914e98bf6195ac2af5336bd478e07380