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An investigation was made into the transparency of high resistance specimens and the electro optical effect in them in connection with the feasibility of using GaAs crystals for modulating laser emission with a wavelength of 10.6 Mu. The results show that an IR modulator can be developed on the basis of GaAs crystals which operate at high layer power levels, in particular when cooling is used (the authors used a thermoelectric cooler). A depth of modulation of 60 to 70 percent is achieved at a voltage with an amplitude of 1.5 kv. (Author), Unedited rough draft trans. of mono. Problemy Peredachi Informatsii (Problems of Information Transmission) n.p., 1969 p376-382.

A device using a symmetrical Michaelson interferometer with double refracting diagonally cut crystals in the arms was developed. The latter are controlled by a field at right angles to the direction of propagation. The power required to control the modulator can be lowered by increasing the length of the crystal and decreasing its cross section. Details on the thermal expansion of various parts and materials are given and the effects of expansion on modulator operation are described. The modulator was tested between 0 and 100 Mc with a control voltage of 150 v. The model was tested in an experimental transmission of a television picture with the aid of a laser beam., Edited machine trans. of mono. Vsesoyuznaya Nauchnaya Sessiya, Posvyaschennaya Dnyu Radio (no. 22): Sektsiya Kvantovoi Elektroniki (Scientific and Technical Society of Radio Engineering and Electrical Communication. Central Government 22 All-Union Scientific Session, Dedicated to Radio Day. Section of Quantum (Electronics), Moscow, 1966, p33-40.