Use of Gallium Arsenide Crystals to Modulate Emission on 10.6 Micrometers Wavelength

An investigation was made into the transparency of high resistance specimens and the electro optical effect in them in connection with the feasibility of using GaAs crystals for modulating laser emission with a wavelength of 10.6 Mu. The results show that an IR modulator can be developed on the basis of GaAs crystals which operate at high layer power levels, in particular when cooling is used (the authors used a thermoelectric cooler). A depth of modulation of 60 to 70 percent is achieved at a voltage with an amplitude of 1.5 kv. (Author)
Unedited rough draft trans. of mono. Problemy Peredachi Informatsii (Problems of Information Transmission) n.p., 1969 p376-382.