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8. A 0.64μm 4-Photodiode 1.28μm 50Mpixel CMOS Image Sensor with 0.98e- Temporal Noise and 20Ke- Full-Well Capacity Employing Quarter-Ring Source-Follower

9. Sol–gel synthesized siloxane hybrid materials for display and optoelectronic applications.

32. Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs

33. P.14: Distinguished Poster Paper: Separate Extraction Technique for Intrinsic Donor‐ and Acceptor‐like Density‐of‐States over Full‐Energy Range Sub‐Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One‐Shot Monochromatic Photonic Capacitance‐Voltage Characteristics

36. Highly Conducting In2O3 Nanowire Network with Passivating ZrO2 Thin Film for Solution‐Processed Field Effect Transistors.

37. Modified Conductance Method for Extraction of Subgap Density of States in a-IGZO Thin-Film Transistors

39. 17-2: Invited Paper: Flexible Hard Coating (Flex9H ®) for Foldable Display Cover Plastic Film.

40. Extraction Technique for Intrinsic Subgap DOS in a-IGZO TFTs by De-Embedding the Parasitic Capacitance Through the Photonic C– V Measurement.

41. High-Performance and Simply-Synthesized Ladder-Like Structured Methacrylate Siloxane Hybrid Material for Flexible Hard Coating.

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