Highly Conducting In2O3 Nanowire Network with Passivating ZrO2 Thin Film for Solution‐Processed Field Effect Transistors.

The article looks at study regarding solution processed in Nanowire field effect transistors (NWFETs) for conventional bottom gate top contacts (BGTC structure) with a multiple nanowire network. Topics discussed include utilization of electrospinning which produce a scalable continuous nanowire network, use of annealing process to remove the polymer matrix, bilayer structure comprising insulating zirconium oxide and electrons can pass through several insulating oxides and semiconducting buffer.