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The semiconductor industry increasingly relies on high aspect ratio etching facilitated by Amorphous Carbon Layer (ACL) masks for advanced 3D-NAND and DRAM technologies. However, carbon contamination in ACL deposition chambers necessitates effective fluorine-based plasma cleaning. This study employs a high-temperature inductively coupled plasma (ICP) system and Time-of-Flight Mass Spectrometry (ToF-MS) to analyze gas species variations under different process conditions. We applied Principal Component Analysis (PCA) and Non-negative Matrix Factorization (NMF) to identify key gas species, and used the First-Order Plus Dead Time (FOPDT) model to quantify dynamic changes in gas signals. Our analysis revealed the formation of COF 3 at high gas temperatures and plasma power levels, indicating the presence of additional reaction pathways under these conditions. This study provides a comprehensive understanding of high-temperature plasma interactions and suggests new strategies for optimizing ACL processes in semiconductor manufacturing. [ABSTRACT FROM AUTHOR]

The technique of plasma processing is beneficial for wafer cleaning and precision etching of integrated circuits and essential in manufacture of advanced semiconductor devices with unmatched perfection. Research on two‐dimensional (2D) materials, such as transition metal dichalcogenides(TMDs), offers a promising solution to the challenges in semiconductor miniaturization. TMDs, with their atomic layer thicknesses and silicon‐like bandgaps, can be integrated using existing plasma systems. Different 2D crystal structures, such as 1T and 2H configurations, exhibit distinctive properties. Computational approaches are also developed to provide guidelines for controlled synthesis and etching of large‐scale and high‐quality 2D materials. Plasma/gas‐surface interactions during the synthesis, etching, and phase transformation of 2D materials are explored using atomistic simulations such as density functional theory and molecular dynamics. The reaction energetics, chemical species, and associated kinetics are discovered in the simulation study. These results decipher various mechanisms of 2D materials processing at the microscopic scale and predict certain optimal process parameters. Plasma/gas‐based semiconductor technologies are crucial in electronics because they enable production of advanced semiconductors. Plasma/gas etching allows precise and selective removal of material and plasma‐enhanced chemical vapor deposition enhances chemical reactions for efficient film deposition; therefore, these processes are majorly important for harnessing 2D materials in electronic applications. [ABSTRACT FROM AUTHOR]

Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4 and SiO2 in an NF3/O2 radio-frequency glow discharge. The etch rate linearly depended on the source and bias powers, whereas the etch selectivity was affected by the power and ratio of the gas mixture. We found that the selectivity can be controlled by lowering the power with a suitable gas ratio, which affects the surface reaction during the etching process. X-ray photoelectron spectroscopy of the Si3N4 and QMS measurements support the effect of surface reaction on the selectivity change by surface oxidation and nitrogen reduction with the increasing flow of O2. We suggest that the creation of SiOxNy bonds on the surface by NO oxidation is the key mechanism to change the etch selectivity of Si3N4 over SiO2. [ABSTRACT FROM AUTHOR]

Memristors are garnering attention as promising electronic synapse and nonvolatile memory devices owing to their high density and analog switching with low energy consumption. However, most conventional memristors suffer not only from device-to-device and cycle-to-cycle variations but also from a destructive conductive filament (CF)-forming process, which are issues that must be addressed to use memristors in practical applications. Here, we demonstrate a highly robust and reliable memristor array using molybdenum disulfide (MoS2) nanograins, named nanoristors. MoS2 films with 7–10 nm nanograins were synthesized using plasma-enhanced chemical vapor deposition. We confirmed that tens of thousands of grain boundaries exist in a 1 μm × 1 μm area, resulting in memory operation with exceptionally high uniformity and excellent endurance (>2300 cycles). Moreover, vertically formed grain boundaries and defects work as a guiding route for Ag+ ion diffusion, resulting in forming-free operation with a low switching voltage of less than 500 mV. Furthermore, the MoS2 nanoristor successfully emulated potentiation and depression characteristics which are essential for online learning in neuromorphic systems. The face recognition functionality of the MoS2 nanoristor-based synapse device is evaluated using the device-to-system simulation. As the proposed approach of fabricating nanograined MoS2 leads to highly uniform and robust operation of memristors, it is expected that nanoristors fabricated using layered nanomaterials will open up new opportunities for achieving electronic synapse and memory devices for application in neuromorphic electronic systems. [ABSTRACT FROM AUTHOR]

In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance improvements. In this article, a facile phase modification method is presented via a plasma‐assisted sulfidation process to synthesize multiphased WS2 thin films, including distorted 1 T (D‐1 T) phase and 2 H phases for photoreactive NDR devices with p‐Si. The D‐1 T phase offers a feasible route to achieve high‐performance NDR devices with excellent stability and semimetallic properties. A comprehensive investigation of experimental and computational analyses elucidates the phase transition mechanism with various temperatures and electrical properties of D‐1 T WS2. In addition, optimizing electron tunneling in the multiple‐phased tungsten disulfide (MP‐WS2)/p‐Si heterojunction at MP‐WS2 with 77.4% D‐1 T phase results in superior NDR performance with a peak‐to‐valley current ratio of 13.8 and reliable photoreactive random‐access memory. This unique phase engineering process via plasma‐assisted sulfidation provides a pioneering perspective in functionalization and reliability for next‐generation nanoelectronics. [ABSTRACT FROM AUTHOR]

Sequential infiltration synthesis (SIS) is an emerging vapor-phase synthetic route for the preparation of organic–inorganic composites. Previously, we investigated the potential of polyaniline (PANI)-InOx composite thin films prepared using SIS for application in electrochemical energy storage. In this study, we investigated the effects of the number of InOx SIS cycles on the chemical and electrochemical properties of PANI-InOx thin films via combined characterization using X-ray photoelectron spectroscopy, ultraviolet–visible spectroscopy, Raman spectroscopy, Fourier transform infrared spectroscopy, and cyclic voltammetry. The area-specific capacitance values of PANI-InOx samples prepared with 10, 20, 50, and 100 SIS cycles were 1.1, 0.8, 1.4, and 0.96 mF/cm², respectively. Our result shows that the formation of an enlarged PANI-InOx mixed region directly exposed to the electrolyte is key to enhancing the pseudocapacitive properties of the composite films. [ABSTRACT FROM AUTHOR]

This study identified time-varying harmonic characteristics in a high-density plasma (HDP) chemical vapor deposition (CVD) chamber by depositing low-k oxide (SiOF). The characteristics of harmonics are caused by the nonlinear Lorentz force and the nonlinear nature of the sheath. In this study, a noninvasive directional coupler was used to collect harmonic power in the forward and reverse directions, which were low frequency (LF) and high bias radio frequency (RF). The intensity of the 2nd and 3rd harmonics responded to the LF power, pressure, and gas flow rate introduced for plasma generation. Meanwhile, the intensity of the 6th harmonic responded to the oxygen fraction in the transition step. The intensity of the 7th (forward) and 10th (in reverse) harmonic of the bias RF power depended on the underlying layers (silicon rich oxide (SRO) and undoped silicate glass (USG)) and the deposition of the SiOF layer. In particular, the 10th (reverse) harmonic of the bias RF power was identified using electrodynamics in a double capacitor model of the plasma sheath and the deposited dielectric material. The plasma-induced electronic charging effect on the deposited film resulted in the time-varying characteristic of the 10th harmonic (in reverse) of the bias RF power. The wafer-to-wafer consistency and stability of the time-varying characteristic were investigated. The findings of this study can be applied to in situ diagnosis of SiOF thin film deposition and optimization of the deposition process. [ABSTRACT FROM AUTHOR]

In this study, we assessed the physical and chemical properties of HfO2 thin films deposited by plasma-enhanced atomic layer deposition (PEALD). We confirmed the self-limiting nature of the surface reactions involved in the HfO2 thin film's growth by tracing the changes in the growth rate and refractive index with respect to the different dose times of the Hf precursor and O2 plasma. The PEALD conditions were optimized with consideration of the lowest surface roughness of the films, which was measured by atomic force microscopy (AFM). High-resolution X-ray photoelectron spectroscopy (XPS) was utilized to characterize the chemical compositions, and the local chemical environments of the HfO2 thin films were characterized based on their surface roughness and chemical compositions. The surface roughness and chemical bonding states were significantly influenced by the flow rate and plasma power of the O2 plasma. We also examined the uniformity of the films on an 8″ Si wafer and analyzed the step coverage on a trench structure of 1:13 aspect ratio. In addition, the crystallinity and crystalline phases of the thin films prepared under different annealing conditions and underlying layers were analyzed. [ABSTRACT FROM AUTHOR]