Back to Search Start Over

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing.

Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing.

Authors :
Jang, Sung Kyu
Lee, Woosung
Choi, Ga In
Kim, Jihun
Kang, Minji
Kim, Seongho
Choi, Jong Hyun
Kim, Seul-Gi
Lee, Seoung-Ki
Kim, Hyeong-U
Kim, Hyeongkeun
Source :
Sensors (14248220); Nov2024, Vol. 24 Issue 22, p7307, 18p
Publication Year :
2024

Abstract

The semiconductor industry increasingly relies on high aspect ratio etching facilitated by Amorphous Carbon Layer (ACL) masks for advanced 3D-NAND and DRAM technologies. However, carbon contamination in ACL deposition chambers necessitates effective fluorine-based plasma cleaning. This study employs a high-temperature inductively coupled plasma (ICP) system and Time-of-Flight Mass Spectrometry (ToF-MS) to analyze gas species variations under different process conditions. We applied Principal Component Analysis (PCA) and Non-negative Matrix Factorization (NMF) to identify key gas species, and used the First-Order Plus Dead Time (FOPDT) model to quantify dynamic changes in gas signals. Our analysis revealed the formation of COF 3 at high gas temperatures and plasma power levels, indicating the presence of additional reaction pathways under these conditions. This study provides a comprehensive understanding of high-temperature plasma interactions and suggests new strategies for optimizing ACL processes in semiconductor manufacturing. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
14248220
Volume :
24
Issue :
22
Database :
Complementary Index
Journal :
Sensors (14248220)
Publication Type :
Academic Journal
Accession number :
181205045
Full Text :
https://doi.org/10.3390/s24227307