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Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing.
Data-Driven Analysis of High-Temperature Fluorocarbon Plasma for Semiconductor Processing.
- Source :
- Sensors (14248220); Nov2024, Vol. 24 Issue 22, p7307, 18p
- Publication Year :
- 2024
-
Abstract
- The semiconductor industry increasingly relies on high aspect ratio etching facilitated by Amorphous Carbon Layer (ACL) masks for advanced 3D-NAND and DRAM technologies. However, carbon contamination in ACL deposition chambers necessitates effective fluorine-based plasma cleaning. This study employs a high-temperature inductively coupled plasma (ICP) system and Time-of-Flight Mass Spectrometry (ToF-MS) to analyze gas species variations under different process conditions. We applied Principal Component Analysis (PCA) and Non-negative Matrix Factorization (NMF) to identify key gas species, and used the First-Order Plus Dead Time (FOPDT) model to quantify dynamic changes in gas signals. Our analysis revealed the formation of COF 3 at high gas temperatures and plasma power levels, indicating the presence of additional reaction pathways under these conditions. This study provides a comprehensive understanding of high-temperature plasma interactions and suggests new strategies for optimizing ACL processes in semiconductor manufacturing. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 14248220
- Volume :
- 24
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Sensors (14248220)
- Publication Type :
- Academic Journal
- Accession number :
- 181205045
- Full Text :
- https://doi.org/10.3390/s24227307