1. Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface
- Author
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Rai Moriya, Takehiro Yamaguchi, Tomoki Machida, Satoru Masubuchi, and Kazuyuki Iguchi
- Subjects
Materials science ,Condensed Matter - Mesoscale and Nanoscale Physics ,Magnetoresistance ,Graphene ,Composite number ,FOS: Physical sciences ,Nanotechnology ,Adhesion ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,law.invention ,Atomic layer deposition ,Tunnel magnetoresistance ,Ferromagnetism ,Chemical engineering ,law ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Monolayer - Abstract
We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene., Comment: 14 pages, 3 figures, accepted to Journal of Magnetism and Magnetic Materials
- Published
- 2012