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Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface
- Source :
- Journal of Magnetism and Magnetic Materials. 324:849-852
- Publication Year :
- 2012
- Publisher :
- Elsevier BV, 2012.
-
Abstract
- We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.<br />Comment: 14 pages, 3 figures, accepted to Journal of Magnetism and Magnetic Materials
- Subjects :
- Materials science
Condensed Matter - Mesoscale and Nanoscale Physics
Magnetoresistance
Graphene
Composite number
FOS: Physical sciences
Nanotechnology
Adhesion
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
law.invention
Atomic layer deposition
Tunnel magnetoresistance
Ferromagnetism
Chemical engineering
law
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Monolayer
Subjects
Details
- ISSN :
- 03048853
- Volume :
- 324
- Database :
- OpenAIRE
- Journal :
- Journal of Magnetism and Magnetic Materials
- Accession number :
- edsair.doi.dedup.....1ea64eebf05496917000cc3821b325bd