187 results on '"Kamakura, Y."'
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2. A Study of Trap Profiles in Thin Silicon Dioxide Films at Dielectric Breakdown using Percolation Model
3. Effect of phonon-boundary scattering on phonon-drag factor in Seebeck coefficient of Si wire
4. A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
5. Impact ionization model for full band Monte Carlo simulation
6. A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model
7. Atomic configuration study of implanted F in Si based on experimental evidences and ab initio calculations
8. Photoluminescence study of {311}defect-precursors in self-implanted silicon
9. Monte Carlo simulation of phonon transport in silicon including a realistic dispersion relation.
10. Possibility of Thermoelectric Property Improvement by Non-uniformly Doped Si
11. Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulation
12. Crosstalk in multi-collection-gate image sensors and its improvement
13. Impact ionization model for full band Monte Carlo simulation.
14. Full band Monte Carlo simulation of impact ionization in wide bandgap semiconductors based on ab initio calculation
15. SUN-P042: Efficacy of a New Intervention “Wiping Plus Providing Oral Nutritional Supplements” in Preventing Aspiration Pneumonia in Elderly People: A Multicenter, Randomized Comparative Trial
16. Crosstalk in Multi-Collection-Gate Image Sensors and its Improvement.
17. Ab initio study of avalanche breakdown in diamond for power device applications
18. Toward 1Gfps: Evolution of ultra-high-speed image sensors -ISIS, BSI, multi-collection gates, and 3D-stacking-
19. Coupled Monte Carlo simulation of transient electron-phonon transport in small FETs
20. Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs
21. Phonon drag effect on Seebeck coefficient of ultrathin P-doped Si-on-insulator layers
22. The impact of increased deformation potential at MOS interface on quasi-ballistic transport in ultrathin channel MOSFETs scaled down to sub-10 nm channel length
23. Nano-device simulation from an atomistic view
24. Performance Comparison of Graphene Nanoribbon, Si Nanowire and InAs Nanowire FETs in the Ballistic Transport Limit
25. Channel Length Scaling Limits of III-V Channel MOSFETs Governed by Source-Drain Direct Tunneling
26. Simulation Study on Quasi-Ballistic Heat Transfer Effect in FinFETs
27. Performance Projections of III-V Channel Nanowire nMOSFETs in the Ballistic Transport Limit
28. Nonequilibrium Green Function Simulations of Graphene-Nanoribbon Resonant-Tunneling Transistors
29. Monte Carlo Simulation of Phonon Transport in Silicon Nanowires Including Realistic Dispersion Relation
30. A Source-Side Injection Single-Poly Split-Gate Cell Technology for Embedded Flash Memory
31. Current fluctuation in sub-nano second regime in gate-all-around nanowire channels studied with ensemble Monte Carlo/molecular dynamics simulation
32. An Analytic Circuit Model of Ballistic Nanowire MOSFET for Transient Analysis
33. Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs
34. Impact of channel shape on carrier transport investigated by ensemble monte carlo/molecular dynamics simulation
35. Subband representation in atomistic transport simulation of nanowire transistors
36. Phenomenological model for stress and relaxation processes of resistance drift in magnetic tunnel junctions
37. Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films
38. Impact of Attractive Ion in Undoped Channel on the Characteristics of Nanoscale Multi-Gate FETs: A 3D NEGF Study
39. An Analytical Compact Model of Ballistic Cylindrical Nanowire MOSFET
40. Simulation on the Heat Transport in a Silicon Nano-Structure Covered with Oxide Films
41. Ensemble Monte Carlo/molecular dynamics simulation of electron mobility in silicon with ordered dopant arrays
42. A New Surface Potential Based Poly-Si TFT Model for Circuit Simulation
43. Performance Enhancement of pMOSFETs Depending on Strain, Channel Direction, and Material
44. Characterization and modeling of self-heating effect on transient current overshoot in poly-Si TFTs fabricated on glass substrate.
45. Fully analytic compact model of ballistic gate-all-around MOSFET with rectangular cross section.
46. Effects of atomic disorder on carrier transport in Si nanowire transistors.
47. Low-dimensional quantum transport models in atomistic device simulations.
48. Restructuring centipedes and their applications to fast extraction of structures in Electron Microscope tomography images.
49. Quantum transport and electron-phonon interaction in nanoscale MOSFETs.
50. Numerical simulation of transient heat conduction in nanoscale Si devices.
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