Effects of atomic disorder on carrier transport in Si nanowire transistors.

Authors :: Minari, H.
Zushi, T.
Watanabe, T.
Kamakura, Y.
Mori, N.
Source :: 2011 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD); 2011, p27-30, 4p
Publication Year :: 2011

Language :: English
ISBNs :: 9781612844190
Database :: Complementary Index
Journal :: 2011 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD)
Publication Type :: Conference
Accession number :: 80396274
Full Text :: https://doi.org/10.1109/SISPAD.2011.6035041