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Unlike the other former Soviet-block countries, Eastern Germany/the "GDR", had the opportunity to the re-unification with a highly developed western country, the Federal Republic of (West) Germany in 1990. In order to record the following rapid improvements in renal replacement therapy, we performed our own survey in Eastern Germany--excluding Eastern Berlin--by questionnaire, comparing the years 1989/December, and 1994/December. 112 of the 113 dialysis facilities for adult regular dialysis patients replied to our questionnaire (99%). From 1989 to 1994, the number of dialysis centers increased from 53 to 113 (--213%), reaching 7.9 centres p.m.p. Of these facilities, 29% were hospital centers, 48% were private dialysis units, and 23% were run by nonprofit dialysis organizations. The number of dialysis stations increased from 602 to 1,719 (--286%), i.e. 120 stations p.m.p. The number of patients in regular dialysis treatment rose from 2,127 to 5,335 (--251%), that means a prevalence of 373 patients p.m.p. In 1989, 67 new patients (p.m.p.) had been accepted for maintenance treatment (incidence), in contrast to 130 new patients p.m.p. in 1994 (--194%), now under the conditions of unlimited accessibility to dialysis treatment. Questions referring to this point--the incidence of new patients--were only asked in Thüringen (2.5 mio. inhabitants). Alternative treatment modalities became feasible under the new conditions in Eastern Germany. In contrast to 99% hemodialysis patients in December 1989, at the end of 1994 92.8% of the patients were treated by hemodialysis, 2.0% by hemofiltration, and 5.2% by peritoneal dialysis, predominantly CAPD.(ABSTRACT TRUNCATED AT 250 WORDS)

It is shown that strained isoelectronically doped buffer layers grown on GaAs and InP substrates allow one to reduce the dislocation density as well as the deep level concentration. Photoluminescence measurements show an improved near gap luminescence and a reduced deep level emission. This has been also confirmed by DLTS measurements. The higher material quality is also reflected in the device performance. GaAs Schottky diodes (n ˜0.5 · 1016Cm-3) exhibit a leakage current of 100 pA up to 50 V reverse bias at room temperature even with large Schottky contact area of 125 μm × 60 μm. This technique allows the quality of electronic and optoelectronic devices to be improved.

A remarkable asymmetry is observed in the Raman lineshape of the A1-phonon of Te. This asymmetry increases with increasing hole concentration. The E-symmetry phonons on the other hand always exhibit symmetric lineshapes. The A1-phonon asymmetry is interpreted as a Fano-type interaction between the A1-phonon and a continuum of excitations. With the aid of various experiments this continuum is identified as intraband excitations of holes in the upper valence band. Es wird eine merkliche Asymmetrie der Raman-Linienform des A1-Phonons in Te beobachtet. Diese Anisotropie nimmt mit steigender Locherkonzentration zu. Auf der anderen Seite zeigen die Phononen mit E-Symmetrie immer symmetrische Linienformen. Die Asymmetrie des A1-Phonons wird als Fano-Wechselwirkung zwischen dem A1-Phonon und einem Kontinuum von Anregungen interpretiert. Mit verschiedenen Experimenten wird dieses Kontinuum als Intrabandanregung von Lochern im oberen Valenzband identifiziert.

Optical, crystallographic, and transport properties of nominally undoped n‐type and Zn doped p‐type Gax In1−xAs /InP (0.44

A DLTS-system with largely improved performance has been realized: dC min = 13·10 -18 F >, reponse time = 5 μ s, dC/C o = 3·10 -8 . The influence of different s.i. GaAs substrate materials on the quality of epitaxial layers is assesses. Depth profiles of deep levels in GaAs Schottky diodes caused by the gate metallization are measured with a depth resolution better than 10nm. A deep acceptorlike trap at E y +150meV is discovered in thin In 0.53 Ga 0.47 As layers grown on Fe-doped InP. The trap is most probably caused by outdiffusion of Fe from the substrate.

Two deep traps in Ga0.47In0.53As/InP:Fe at a depth of 110 meV and 150 meV, respectively, are observed for the first time using low‐temperature photoluminescence and deep level transient spectroscopy. The dependence of luminescence intensity on the growth process itself (liquid phase epitaxy, vapor phase epitaxy, and metalorganic chemical vapor deposition) and its parameters (growth temperature, layer thickness) and the substrate doping is reported and leads to the unambigous identification of the 150‐meV acceptorlike trap as being caused by Fe impurities. Fe diffuses from the substrate to the epitaxial layer during the growth process. This outdiffusion is less pronounced for layers grown at lower temperature. The level at 110 meV which is also observed in layers grown on InP:S substrate is tentatively assigned to an intrinsic defect of Ga0.47In0.53As.

In carp acclimated to 20 degrees C or 10 degrees C intraerythrocytic pH (pHi) and plasma pH (pHe) were determined in vitro after equilibration with CO2 in either O2 or N2. ATP and GTP were determined with an enzymatic assay described in detail. The relationship between pHi, pHe and oxygen saturation was not affected by the acclimation temperature and was (pHi-6.10) = (0.853-0.159 X S) X (pHe-6.21) There was a slight but significant decrease in ATP at 20 degrees C. Apparent buffer values were affected by oxygenation and temperature. It is concluded from the recalculated CO2 Bohr factor and from the temperature effect on the buffer value that carp hemoglobin forms carbamate which decreases at a higher temperature. These changes in ATP and carbamate can partly account for the increase in whole blood oxygen affinity in carp acclimated at a high temperature.